CEP10N6/CEB10N6 CEF10N6
N-Channel Enhancement Mode Field Effect Transistor
FEATURES
Type CEP10N6 CEB10N6 CEF10N6
VDSS 600V 600V
600V
RDS(ON) 0.75Ω 0.75Ω
0.75Ω
ID 10A 10A 10A d
@VGS 10V 10V
10V
Super high dense cell design for extremely low RDS(ON). High power and current handing capability. Lead free product is acquired.
D
DG
G S
CEB SERIES TO-263(...
