CEP830G/CEB830G CEF830G
N-Channel Enhancement Mode Field Effect Transistor
FEATURES
Type CEP830G CEB830G
VDSS 500V 500V
CEF830G
500V
RDS(ON) 1.5Ω 1.5Ω 1.5Ω
ID @VGS 5A 10V 5A 10V 5A e 10V
Super high dense cell design for extremely low RDS(ON).
High power and current handing capability. Lead free product is acquired.
D
G
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G S
CEB SERIES TO-263(DD-P...
