CEP840L/CEB840L
CEF840L
N-Channel Enhancement Mode Field Effect Transistor
PRELIMINARY
FEATURES
Type CEP840L CEB840...
CEP840L/CEB840L
CEF840L
N-Channel Enhancement Mode Field Effect
Transistor
PRELIMINARY
FEATURES
Type CEP840L CEB840L
VDSS 500V 500V
CEF840L
500V
RDS(ON) 0.8Ω 0.8Ω 0.8Ω
ID @VGS 8A 10V 8A 10V 8A e 10V
Super high dense cell design for extremely low RDS(ON).
High power and current handing capability. Lead free product is acquired.
D
G
D
G S
CEB SERIES TO-263(DD-PAK)
G D S
CEP SERIES TO-220
G
D S CEF SERIES
TO-220F
S
ABSOLUTE MAXIMUM RATINGS Tc = 25 C unless otherwise noted
Parameter
Symbol
Limit
TO-220/263
TO-220F
Drain-Source Voltage Gate-Source Voltage Drain Current-Continuous Drain Current-Pulsed a Maximum Power Dissipation @ TC = 25 C
- Derate above 25 C
VDS 500
VGS ±20
ID 8 8 e
IDM f
32 32 e
125 40 PD 1.0 0.32
Operating and Store Temperature Range
TJ,Tstg
-55 to 150
Thermal Characteristics
Parameter Thermal Resistance, Junction-to-Case Thermal Resistance, Junction-to-Ambient
Symbol RθJC RθJA
Limit 1.0 62.5
3.1 65
Units
V V A A W W/ C C
Units C/W C/W
This is preliminary information on a new product in development now . Details are subject to change without notice .
1
Rev 1. 2007.Nov. http://www.cet-mos.com
CEP840L/CEB840L CEF840L
Electrical Characteristics Tc = 25 C unless otherwise noted
Parameter
Symbol
Test Condition
Off Characteristics
Drain-Source Breakdown Voltage Zero Gate Voltage Drain Current Gate Body Leakage Current, Forward Gate Body Leakage Current, Reverse On Characteristics b
BVDSS IDSS IGSSF IGSSR
VGS = 0V, ID =...