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CEP12N5 Dataheets PDF



Part Number CEP12N5
Manufacturers CET
Logo CET
Description N-Channel MOSFET
Datasheet CEP12N5 DatasheetCEP12N5 Datasheet (PDF)

CEP12N5/CEB12N5 CEF12N5 N-Channel Enhancement Mode Field Effect Transistor PRELIMINARY FEATURES Type CEP12N5 CEB12N5 CEF12N5 VDSS 500V 500V 500V RDS(ON) 0.54Ω 0.54Ω 0.54Ω ID 12A 12A 12A d @VGS 10V 10V 10V Super high dense cell design for extremely low RDS(ON). High power and current handing capability. Lead free product is acquired. D DG G S CEB SERIES TO-263(DD-PAK) G D S CEP SERIES TO-220 G D S CEF SERIES TO-220F S ABSOLUTE MAXIMUM RATINGS Tc = 25 C unless otherwise noted Par.

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CEP12N5/CEB12N5 CEF12N5 N-Channel Enhancement Mode Field Effect Transistor PRELIMINARY FEATURES Type CEP12N5 CEB12N5 CEF12N5 VDSS 500V 500V 500V RDS(ON) 0.54Ω 0.54Ω 0.54Ω ID 12A 12A 12A d @VGS 10V 10V 10V Super high dense cell design for extremely low RDS(ON). High power and current handing capability. Lead free product is acquired. D DG G S CEB SERIES TO-263(DD-PAK) G D S CEP SERIES TO-220 G D S CEF SERIES TO-220F S ABSOLUTE MAXIMUM RATINGS Tc = 25 C unless otherwise noted Parameter Symbol Limit TO-220/263 TO-220F Drain-Source Voltage Gate-Source Voltage Drain Current-Continuous Drain Current-Pulsed a Maximum Power Dissipation @ TC = 25 C - Derate above 25 C VDS VGS ID IDM e PD 500 ±30 12 48 166 1.3 12 d 48d 50 0.4 Operating and Store Temperature Range TJ,Tstg -55 to 150 Thermal Characteristics Parameter Thermal Resistance, Junction-to-Case Thermal Resistance, Junction-to-Ambient Symbol RθJC RθJA Limit 0.75 62.5 2.5 65 Units V V A A W W/ C C Units C/W C/W This is preliminary information on a new product in development now . Details are subject to change without notice . 1 Rev 1. 2008.Oct. http://www.cet-mos.com CEP12N5/CEB12N5 CEF12N5 Electrical Characteristics Tc = 25 C unless otherwise noted Parameter Off Characteristics Drain-Source Breakdown Voltage Zero Gate Voltage Drain Current Gate Body Leakage Current, Forward Gate Body Leakage Current, Reverse On Characteristics b Gate Threshold Voltage Static Drain-Source On-Resistance Symbol Test Condition Min Typ Max Units BVDSS IDSS IGSSF IGSSR VGS(th) RDS(on) VGS = 0V, ID = 250µA VDS =500V, VGS = 0V VGS = 30V, VDS = 0V VGS = -30V, VDS = 0V 500 1 100 -100 V µA nA nA VGS = VDS, ID = 250µA 2 4V VGS = 10V, ID = 6A 0.45 0.54 Ω Dynamic Characteristics c Input Capacitance Output Capacitance Reverse Transfer Capacitance Switching Characteristics c Ciss Coss Crss VDS = 25V, VGS = 0V, f = 1.0 MHz Turn-On Delay Time Turn-On Rise Time Turn-Off Delay Time td(on) tr td(off) VDD = 250V, ID = 12A, VGS = 10V, RGEN = 25Ω Turn-Off Fall Time tf Total Gate Charge Gate-Source Charge Gate-Drain Charge Qg Qgs VDS = 400V,ID = 12A, VGS = 10V Qgd Drain-Source Diode Characteristics and Maximun Ratings Drain-Source Diode Forward Current Drain-Source Diode Forward Voltage b ISf VSDg Notes : a.Repetitive Rating : Pulse width limited by maximum junction temperature . b.Pulse Test : Pulse Width < 300µs, Duty Cycle < 2% . c.Guaranteed by design, not subject to production testing. d.Limited only by maximum temperature allowed . e.Pulse width limited by safe operating area . f.Full package IS(max) =6A . g.Full package VSD test condition IS =6A . h.L = 15mH, IAS = 8.5A, VDD = 50V, RG = 25Ω, Starting TJ = 25 C VGS = 0V, IS = 12A 1745 205 20 pF pF pF 31.6 25.6 146.3 32 44.1 7.3 17.3 63.2 51.2 292.6 64 58.7 ns ns ns ns nC nC nC 12 A 1.4 V 2 ID, Drain Current (A) C, Capacitance (pF) CEP12N5/CEB12N5 CEF12N5 12 10 VGS=10,9,8,7,6,5V 8 6 4 2 VGS=4V 0 0 5 10 15 20 25 30 VDS, Drain-to-Source Voltage (V) Figure 1. Output Characteristics ID, Drain Current (A) 14 12 10 8 6 4 25 C 2 TJ=125C 0 0 1.5 3.0 -55 C 4.5 6.0 7.5 VGS, Gate-to-Source Voltage (V) Figure 2. Transfer Characteristics 2400 2000 Ciss 1600 1200 800 400 0 0 Coss Crss 5 10 15 20 25 VDS, Drain-to-Source Voltage (V) Figure 3. Capacitance 1.3 VDS=VGS 1.2 ID=250µA 1.1 1.0 0.9 0.8 0.7 0.6 -50 -25 0 25 50 75 100 125 150 TJ, Junction Temperature( C) Figure 5. Gate Threshold Variation with Temperature RDS(ON), Normalized RDS(ON), On-Resistance(Ohms) IS, Source-drain current (A) 3.0 ID=12A 2.5 VGS=10V 2.0 1.5 1.0 0.5 0.0 -100 -50 0 50 100 150 200 TJ, Junction Temperature( C) Figure 4. On-Resistance Variation with Temperature 101 VGS=0V 100 10-1 0.4 0.6 0.8 1.0 1.2 1.4 1.6 VSD, Body Diode Forward Voltage (V) Figure 6. Body Diode Forward Voltage Variation with Source Current VTH, Normalized Gate-Source Threshold Voltage 3 VGS, Gate to Source Voltage (V) ID, Drain Current (A) CEP12N5/CEB12N5 CEF12N5 10 VDS=400V ID=12A 8 6 4 2 0 0 15 30 45 60 Qg, Total Gate Charge (nC) Figure 7. Gate Charge VDD VIN RL D VOUT VGS RGEN G S 102 RDS(ON)Limit 100ms 101 1ms 10ms DC 100 TC=25 C TJ=150 C 10-1 Single Pulse 100 101 102 103 VDS, Drain-Source Voltage (V) Figure 8. Maximum Safe Operating Area td(on) VOUT t on tr td(off) 90% 10% INVERTED toff tf 90% 10% VIN 10% 50% 90% 50% PULSE WIDTH Figure 9. Switching Test Circuit Figure 10. Switching Waveforms r(t),Normalized Effective Transient Thermal Impedance 100 D=0.5 0.2 10-1 0.1 0.05 0.02 0.01 Single Pulse 10-2 10-5 10-4 10-3 10-2 10-1 Square Wave Pulse Duration (msec) PDM t1 t2 1. R JC (t)=r (t) * R JC 2. R JC=See Datasheet 3. TJM-TC = P* R JC (t) 4. Duty Cycle, D=t1/t2 100 101 Figure 11. Normalized Thermal Transient Impedance Curve 4 .


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