CEP73A3G/CEB73A3G
N-Channel Enhancement Mode Field Effect Transistor
PRELIMINARY
FEATURES
30V, 62A, RDS(ON) = 9mΩ @V...
CEP73A3G/CEB73A3G
N-Channel Enhancement Mode Field Effect
Transistor
PRELIMINARY
FEATURES
30V, 62A, RDS(ON) = 9mΩ @VGS = 10V. RDS(ON) = 16mΩ @VGS = 4.5V.
Super high dense cell design for extremely low RDS(ON). High power and current handing capability. Lead free product is acquired. TO-220 & TO-263 package.
D
G S
CEB SERIES TO-263(DD-PAK)
G D S
CEP SERIES TO-220
G
D S
ABSOLUTE MAXIMUM RATINGS Tc = 25 C unless otherwise noted
Parameter
Symbol
Limit
Drain-Source Voltage Gate-Source Voltage Drain Current-Continuous Drain Current-Pulsed a Maximum Power Dissipation @ TC = 25 C
- Derate above 25 C
VDS VGS ID IDM
PD
30
±20
62 248 75 0.52
Operating and Store Temperature Range
TJ,Tstg
-55 to 175
Thermal Characteristics
Parameter Thermal Resistance, Junction-to-Case Thermal Resistance, Junction-to-Ambient
Symbol RθJC RθJA
Limit 2
62.5
Units V V A A W
W/ C C
Units C/W C/W
Details are subject to change without notice .
1
Rev 1. 2009.June http://www.cet-mos.com
CEP73A3G/CEB73A3G
Electrical Characteristics Tc = 25 C unless otherwise noted
Parameter
Symbol
Test Condition
Min Typ Max Units
Off Characteristics
Drain-Source Breakdown Voltage Zero Gate Voltage Drain Current Gate Body Leakage Current, Forward Gate Body Leakage Current, Reverse On Characteristics b
BVDSS IDSS IGSSF IGSSR
VGS = 0V, ID = 250µA VDS = 30V, VGS = 0V VGS = 20V, VDS = 0V VGS = -20V, VDS = 0V
30
1 100 -100
V µA nA nA
Gate Threshold Voltage Static Drain-Source On-Resistance
VGS(th)...