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CEB3060

CET
Part Number CEB3060
Manufacturer CET
Description N-Channel MOSFET
Published Sep 22, 2015
Detailed Description CEP3060/CEB3060 N-Channel Enhancement Mode Field Effect Transistor FEATURES 30V, 105A,RDS(ON) = 6mΩ @VGS = 10V. RDS(ON...
Datasheet PDF File CEB3060 PDF File

CEB3060
CEB3060

Overview
CEP3060/CEB3060 N-Channel Enhancement Mode Field Effect Transistor FEATURES 30V, 105A,RDS(ON) = 6mΩ @VGS = 10V.
RDS(ON) = 8mΩ @VGS = 4.
5V.
Super high dense cell design for extremely low RDS(ON).
High power and current handing capability.
Lead free product is acquired.
TO-220 & TO-263 package.
D G S CEB SERIES TO-263(DD-PAK) G D S CEP SERIES TO-220 G D S ABSOLUTE MAXIMUM RATINGS Tc = 25 C unless otherwise noted Parameter Symbol Limit Drain-Source Voltage Gate-Source Voltage Drain Current-Continuous Drain Current-Pulsed a Maximum Power Dissipation @ TC = 25 C - Derate above 25 C VDS VGS ID IDM PD 30 ±20 105 420 125 0.
83 Operating and Store Temperature Range TJ,Tstg -55 to 175 ...


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