CEP93A3/CEB93A3
N-Channel Enhancement Mode Field Effect Transistor
FEATURES
30V, 150A, RDS(ON) = 3.0 mΩ @VGS = 10V. RDS(ON) = 6.0 mΩ @VGS = 4.5V.
Super high dense cell design for extremely low RDS(ON). High power and current handing capability. Lead free product is acquired. TO-220 & TO-263 package.
D
D
G S
CEB SERIES TO-263(DD-PAK)
G D S
CEP SERIES TO-...
