Huajing Discrete Devices Silicon N-Channel Power MOSFET
○R
CS4N65FA9HD
General Description:
CS4N65FA9HD, the silicon ...
Huajing Discrete Devices Silicon N-Channel Power MOSFET
○R
CS4N65FA9HD
General Description:
CS4N65FA9HD, the silicon N-channel Enhanced
VDMOSFETs, is obtained by the self-aligned planar Technology
which reduce the conduction loss, improve switching
performance and enhance the avalanche energy. The
transistor
can be used in various power switching circuit for system
miniaturization and higher efficiency. The package form is
TO-220F, which accords with the RoHS standard.
Features:
z Fast Switching
z ESD Improved Capability
z Low Gate Charge (Typical Data: 13nC)
z Low Reverse transfer capacitances(Typical: 4.2pF)
z 100% Single Pulse avalanche energy Test
Applications:
Power switch circuit of adaptor and charger.
Absolute(Tc= 25℃ unless otherwise specified):
Symbol Parameter
VDSS
ID
IDMa1 VGS EAS a2 EAR a1 IAR a1 dv/dt a3
PD
Drain-to-Source Voltage Continuous Drain Current Continuous Drain Current TC = 100 °C Pulsed Drain Current Gate-to-Source Voltage Single Pulse Avalanche Energy Avalanche Energy ,Repetitive Avalanche Current Peak Diode Recovery dv/dt Power Dissipation Derating Factor above 25°C
VESD(G-S)
TJ,Tstg TL
Gate source ESD (HBM-C= 100pF, R=1.5kΩ) Operating Junction and Storage Temperature Range MaximumTemperature for Soldering
VDSS ID PD(TC=25℃) RDS(ON)Typ
650 4 30 2.2
Rating
650 4
2.9 16 ±30 200 30 2.5 5.0 30 0.24
3000
150,–55 to 150 300
V A W Ω
Units V A A A V mJ mJ A
V/ns W
W/℃
V
℃ ℃
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