EMH1405

Ordering number : ENA1667A EMH1405 SANYO Semiconductors DATA SHEET EMH1405 N-Channel Silicon MOSFET General-Purpose Switching Device Applications Features ON-resistance RDS(on)1=14mΩ(typ) 4V drive Halogen free compliance Protection diode in Specifications Absolute Maximum Ratings at Ta=25°C Parameter Symbol Drain-to-Source Voltage Gate-to-Source Voltage Drain Current (DC) Drain Current (Pulse) Allowable Power Dissipation Channel Temperature VDSS VGSS ID IDP PD Tch Storage Temperature Tstg Conditions PW≤10μs, duty cycle≤1% When mounted on ceramic substrate (1200mm2×0.8mm) Ratings 30 ±20 8.5 34 1.5 150 --55 to +150 Unit V V A A W °C °C Package Dimensions unit : mm (typ.) 7045-001 0.2 8 5 0.125 EMH1405-TL-H Product & Package Information Package : EMH8 JEITA, JEDEC :- Minimum Packing Quantity : 3,000 pcs./reel Taping Type : TL Marking 0.05 0.75 0.2 1.7 0.2 2.1 1 0.5 2.0 4 1 : Source 2 : Source 3 : Source 4 : Gate 5 : Drain 6 : Drain 7 : Drain 8 : Drain SANYO : EMH8 TL Electrical Connection 8765 KE LOT No. 1234 http://semicon.sanyo.com/en/network 50112 TKIM/60210PE TK IM TC-00002377 No. A1667-1/7 EMH1405 Electrical Characteristics at Ta=25°C Parameter Symbol Conditions Drain-to-Source Breakdown Voltage Zero-Gate Voltage Drain Current Gate-to-Source Leakage Current Cutoff Voltage Forward Transfer Admittance Static Drain-to-Source On-State Resistance Input Capacitance Output Capacitance Reverse Transfer Capacitance Turn-ON Dela...