6A N-Channel MOSFET
AOTF6N90
900V,6A N-Channel MOSFET
General Description
Product Summary
The AOTF6N90 is fabricated using an advanced hi...
Description
AOTF6N90
900V,6A N-Channel MOSFET
General Description
Product Summary
The AOTF6N90 is fabricated using an advanced high voltage MOSFET process that is designed to deliver high levels of performance and robustness in popular AC-DC applications.By providing low RDS(on), Ciss and Crss along with guaranteed avalanche capability this parts can be adopted quickly into new and existing offline power supply designs.
For Halogen Free add "L" suffix to part number: AOTF6N90L
VDS ID (at VGS=10V) RDS(ON) (at VGS=10V)
100% UIS Tested 100% Rg Tested
Top View TO-220F
1000V@150℃ 6A < 2.2Ω
D
AOTF6N90
S GD
Absolute Maximum Ratings TA=25°C unless otherwise noted
Parameter
Symbol
Drain-Source Voltage
VDS
Gate-Source Voltage
VGS
Continuous Drain
TC=25°C
Current
TC=100°C
Pulsed Drain Current C
Avalanche Current C
Repetitive avalanche energy C
Single plused avalanche energy G
Peak diode recovery dv/dt
ID
IDM IAR EAR EAS dv/dt
TC=25°C Power Dissipation B Derate above 25oC
PD
Junction and Storage Temperature Range Maximum lead temperature for soldering purpose, 1/8" from case for 5 seconds Thermal Characteristics
TJ, TSTG TL
Parameter
Symbol
Maximum Junction-to-Ambient A,D
RθJA
Maximum Junction-to-Case
RθJC
* Drain current limited by maximum junction temperature.
G
AOTF6N90 900 ±30 6* 3.9* 24 3.3 80 160 5 50 0.4
-55 to 150
300
AOTF6N90 65 2.5
S
Units V V
A
A mJ mJ V/ns W W/ oC °C
°C
Units °C/W °C/W
Rev1: Jul 2011
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AOTF6N90
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