Preliminary Data Sheet
NP100N055PUK
MOS FIELD EFFECT TRANSISTOR
R07DS0589EJ0100 Rev.1.00
Dec 12, 2011
Description
The...
Preliminary Data Sheet
NP100N055PUK
MOS FIELD EFFECT
TRANSISTOR
R07DS0589EJ0100 Rev.1.00
Dec 12, 2011
Description
The NP100N055PUK is N-channel MOS Field Effect
Transistor designed for high current switching applications.
Features
Super low on-state resistance RDS(on) = 3.25 m MAX. (VGS = 10 V, ID = 50 A)
Low Ciss: Ciss = 4900 pF TYP. (VDS = 25 V) Designed for automotive application and AEC-Q101 qualified
Ordering Information
Part No. NP100N055PUK-E1-AY *1 NP100N055PUK-E2-AY *1
Lead Plating Pure Sn (Tin)
Packing
Tape 800 p/reel
Taping (E1 type)
Taping (E2 type)
Note: *1 Pb-free (This product does not contain Pb in the external electrode)
Package TO-263 (MP-25ZP)
Absolute Maximum Ratings (TA = 25°C)
Item
Symbol
Drain to Source Voltage (VGS = 0 V)
VDSS
Gate to Source Voltage (VDS = 0 V)
VGSS
Drain Current (DC) (TC = 25°C) Drain Current (pulse) *1
ID(DC) ID(pulse)
Total Power Dissipation (TC = 25°C)
PT1
Total Power Dissipation (TA = 25°C)
PT2
Channel Temperature
Tch
Storage Temperature Repetitive Avalanche Current *2 Repetitive Avalanche Energy *2
Tstg IAR EAR
Notes: *1 TC = 25°C, PW 10 s, Duty Cycle 1% *2 RG = 25 , VGS = 20 0 V
Ratings 55 20
100 400 176 1.8 175 –55 to 175
38 144
Unit V V A A W W °C °C A mJ
Thermal Resistance
Channel to Case Thermal Resistance Channel to Ambient Thermal Resistance
Rth(ch-C) Rth(ch-A)
0.85 °C/W 83.3 °C/W
R07DS0589EJ0100 Rev.1.00 Dec 12, 2011
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NP100N055PUK
Electrical Characteristi...