Power MOSFET
Applications l High Frequency Synchronous Buck
Converters for Computer Processor Power l High Frequency Isolated DC-DC
C...
Description
Applications l High Frequency Synchronous Buck
Converters for Computer Processor Power l High Frequency Isolated DC-DC
Converters with Synchronous Rectification for Telecom and Consumer Use l Lead-Free
PD - 95270
IRL7833PbF
IRL7833SPbF
IRL7833LPbF
HEXFET® Power MOSFET
VDSS RDS(on) max Qg
:30V 3.8m
32nC
Benefits
l Very Low RDS(on) at 4.5V VGS l Ultra-Low Gate Impedance l Fully Characterized Avalanche Voltage
and Current
TO-220AB IRL7833
D2Pak IRL7833S
TO-262 IRL7833L
Absolute Maximum Ratings
Parameter VDS Drain-to-Source Voltage
VGS ID @ TC = 25°C ID @ TC = 100°C IDM PD @TC = 25°C PD @TC = 100°C
Gate-to-Source Voltage Continuous Drain Current, VGS @ 10V Continuous Drain Current, VGS @ 10V
Pulsed Drain Current gMaximum Power Dissipation gMaximum Power Dissipation
TJ TSTG
Linear Derating Factor Operating Junction and
Storage Temperature Range
Mounting Torque, 6-32 or M3 screw
Thermal Resistance
Parameter
RθJC RθCS RθJA RθJA
Junction-to-Case
hCase-to-Sink, Flat, Greased Surface hJunction-to-Ambient gÃJunction-to-Ambient (PCB Mount)
Notes through are on page 12
www.irf.com
Max. 30 ± 20
150f 110f
600 140 72 0.96 -55 to + 175
y y10 lbf in (1.1N m)
Typ. ––– 0.50 ––– –––
Max. 1.04 ––– 62 40
Units V
A W W/°C °C
Units °C/W
1
05/18/04
IRL7833/S/LPbF
Static @ TJ = 25°C (unless otherwise specified)
Parameter
Min. Typ. Max. Units
Conditions
BVDSS ∆ΒVDSS/∆TJ RDS(on)
VGS(th) ∆VGS(th)/∆TJ
Drain-to-Source Breakdown Voltage
30 ––– ––– V VGS = 0V, ID = 250...
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