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IRL7833PbF

International Rectifier

Power MOSFET

Applications l High Frequency Synchronous Buck Converters for Computer Processor Power l High Frequency Isolated DC-DC C...


International Rectifier

IRL7833PbF

File Download Download IRL7833PbF Datasheet


Description
Applications l High Frequency Synchronous Buck Converters for Computer Processor Power l High Frequency Isolated DC-DC Converters with Synchronous Rectification for Telecom and Consumer Use l Lead-Free PD - 95270 IRL7833PbF IRL7833SPbF IRL7833LPbF HEXFET® Power MOSFET VDSS RDS(on) max Qg :30V 3.8m 32nC Benefits l Very Low RDS(on) at 4.5V VGS l Ultra-Low Gate Impedance l Fully Characterized Avalanche Voltage and Current TO-220AB IRL7833 D2Pak IRL7833S TO-262 IRL7833L Absolute Maximum Ratings Parameter VDS Drain-to-Source Voltage VGS ID @ TC = 25°C ID @ TC = 100°C IDM PD @TC = 25°C PD @TC = 100°C Gate-to-Source Voltage Continuous Drain Current, VGS @ 10V Continuous Drain Current, VGS @ 10V ™Pulsed Drain Current gMaximum Power Dissipation gMaximum Power Dissipation TJ TSTG Linear Derating Factor Operating Junction and Storage Temperature Range Mounting Torque, 6-32 or M3 screw Thermal Resistance Parameter RθJC RθCS RθJA RθJA Junction-to-Case hCase-to-Sink, Flat, Greased Surface hJunction-to-Ambient gÃJunction-to-Ambient (PCB Mount) Notes  through † are on page 12 www.irf.com Max. 30 ± 20 150f 110f 600 140 72 0.96 -55 to + 175 y y10 lbf in (1.1N m) Typ. ––– 0.50 ––– ––– Max. 1.04 ––– 62 40 Units V A W W/°C °C Units °C/W 1 05/18/04 IRL7833/S/LPbF Static @ TJ = 25°C (unless otherwise specified) Parameter Min. Typ. Max. Units Conditions BVDSS ∆ΒVDSS/∆TJ RDS(on) VGS(th) ∆VGS(th)/∆TJ Drain-to-Source Breakdown Voltage 30 ––– ––– V VGS = 0V, ID = 250...




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