SVF20N60PN

SVF20N60F/PN_Datasheet 20A 600V N-CHANNEL MOSFET GENERAL DESCRIPTION SVF20N60F/PN is an N-channel enhancement mode power MOS field effect transistor which is produced using Silan proprietary F-CellTM structure VDMOS technology. The improved planar stripe cell and the improved guard ring terminal have been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand high energy pulse in the avalanche and commutation mode. These devices are widely used in AC-DC power suppliers, DCDC converters and H-bridge PWM motor drivers. FEATURES ∗ 20A, 600V, RDS(on(typ)=0.28Ω@VGS=10V ∗ Low gate charge ∗ Low Crss ∗ Fast switching ∗ Improved dv/dt capability NOMENCLATURE ORDERING INFORMATION Part No. SVF20N60F SVF20N60PN Package TO-220F-3L TO-3PN Marking SVF20N60F 20N60 Material Pb free Pb free Packing Tube Tube HANGZHOU SILAN MICROELECTRONICS CO.,LTD Http://www.silan.com.cn REV:1.1 2012.11.15 Page 1 of 8 Silan Microelectronics SVF20N60F/PN_Datasheet ABSOLUTE MAXIMUM RATINGS (TC=25°C unless otherwise noted) Characteristics Symbol Drain-Source Voltage Gate-Source Voltage Drain Current TC=25°C TC=100°C Drain Current Pulsed Power Dissipation(TC=25°C) -Derate above 25°C Single Pulsed Avalanche Energy (Note 1) Operation Junction Temperature Range Storage Temperature Range VDS VGS ID IDM PD EAS TJ Tstg Rating SVF20N60F SVF20N60PN 600 ±30 20.0 12.6 80.0 74 258 0.59 2.06 1433 -55～+150 -55～+150 Unit V V A A W W/°C mJ °C...