LAPT 2SC2921
Silicon NPN Epitaxial Planar Transistor (Complement to type 2SA1215)
Application : Audio and General Purp...
LAPT 2SC2921
Silicon
NPN Epitaxial Planar
Transistor (Complement to type 2SA1215)
Application : Audio and General Purpose
sAbsolute maximum ratings
Symbol
2SC2921
VCBO
160
VCEO
160
VEBO IC IB PC Tj Tstg
5 15 4 150(Tc=25°C) 150 –55 to +150
(Ta=25°C) Unit V V V A A W °C °C
sElectrical Characteristics
(Ta=25°C)
Symbol
Conditions
2SC2921 Unit
ICBO
VCB=160V
100max
µA
IEBO
VEB=5V
100max
µA
V(BR)CEO hFE
IC=25mA VCE=4V, IC=5A
160min 50min∗
V
VCE(sat)
IC=5A, IB=0.5A
2.0max
V
fT
VCE=12V, IE=–2A
60typ
MHz
COB
VCB=10V, f=1MHz
200typ
pF
∗hFE Rank O(50 to 100), P(70 to 140), Y(90 to 180)
sTypical Switching Characteristics (Common Emitter)
VCC
RL
IC VB2 IB1
(V) (Ω) (A) (V) (mA)
60 12 5 –5 500
IB2 (mA)
–500
ton (µs)
0.2typ
tstg (µs)
1.5typ
tf (µs)
0.35typ
External Dimensions MT-200
2-ø3.2±0.1
36.4±0.3 24.4±0.2
6.0±0.2
2.1 9
7
21.4±0.3
20.0min 4.0max
a b
2
3
1.05
+0.2 -0.1
0.65 +-00..12
5.45±0.1
5.45±0.1
3.0
+0.3 -0.1
BCE
Weight : Approx 18.4g a. Type No. b. Lot No.
Collector Current IC(A) 750mA
I C– V CE Characteristics (Typical)
15
600mA 500mA
400mA
300mA
200mA 10 150mA
100mA
5 50mA
IB=20mA
0 0 12 34 Collector-Emitter Voltage VCE(V)
Collector-Emitter Saturation Voltage VCE(sat)(V)
V CE( s a t ) – I B Characteristics (Typical)
3
I C– V BE Temperature Characteristics (Typical)
(VCE=4V) 15
Collector Current IC(A) –235˚0˚1C2C5(˚CC (asCeasTeeTmepm)p)
2 10
1
IC=10A 5A
0
0
0.2 0.4 0.6 0.8
1.0
Base Current I...
