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FDS8958A_F085 Dataheets PDF



Part Number FDS8958A_F085
Manufacturers Fairchild Semiconductor
Logo Fairchild Semiconductor
Description Dual N&P-Channel MOSFET
Datasheet FDS8958A_F085 DatasheetFDS8958A_F085 Datasheet (PDF)

FDS8958A_F085 Dual N & P-Channel PowerTrench® MOSFET February 2010 FDS8958A_F085 Dual N & P-Channel PowerTrench® MOSFET tm General Description These dual N- and P-Channel enhancement mode power field effect transistors are produced using Fairchild Semiconductor’s advanced PowerTrench process that has been especially tailored to minimize on-state ressitance and yet maintain superior switching performance. These devices are well suited for low voltage and battery powered applications where low.

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FDS8958A_F085 Dual N & P-Channel PowerTrench® MOSFET February 2010 FDS8958A_F085 Dual N & P-Channel PowerTrench® MOSFET tm General Description These dual N- and P-Channel enhancement mode power field effect transistors are produced using Fairchild Semiconductor’s advanced PowerTrench process that has been especially tailored to minimize on-state ressitance and yet maintain superior switching performance. These devices are well suited for low voltage and battery powered applications where low in-line power loss and fast switching are required. Features • Q1: N-Channel 7.0A, 30V RDS(on) = 0.028Ω @ VGS = 10V RDS(on) = 0.040Ω @ VGS = 4.5V • Q2: P-Channel -5A, -30V RDS(on) = 0.052Ω @ VGS = -10V RDS(on) = 0.080Ω @ VGS = -4.5V • Fast switching speed • High power and handling capability in a widely used surface mount package • Qualified to AEC Q101 • RoHS Compliant DD1DD2DD2 DD1 SO-8 Pin 1 SO-8 SS1GS1SS2GG2 Absolute Maximum Ratings TA = 25°C unless otherwise noted Symbol Parameter VDSS VGSS ID PD EAS TJ, TSTG Drain-Source Voltage Gate-Source Voltage Drain Current - Continuous - Pulsed Power Dissipation for Dual Operation (Note 1a) Power Dissipation for Single Operation (Note 1a) (Note 1c) Single Pulse Avalanche Energy (Note 3) Operating and Storage Junction Temperature Range Thermal Characteristics RθJA Thermal Resistance, Junction-to-Ambient RθJC Thermal Resistance, Junction-to-Case (Note 1a) (Note 1) Package Marking and Ordering Information Device Marking Device Reel Size FDS8958A FDS8958A_F085 13” ©2010 Fairchild Semiconductor Corporation FDS8958A_F085 Rev. A 1 5 Q2 6 Q1 7 8 4 3 2 1 Q1 Q2 30 30 ±20 ±20 7 -5 20 -20 22 1.6 1.6 0.9 0.9 54 13 -55 to +150 Units V V A W mJ °C 78 °C/W 40 °C/W Tape width 12mm Quantity 2500 units www.fairchildsemi.com FDS8958A_F085 Dual N & P-Channel PowerTrench® MOSFET Electrical Characteristics Symbol Parameter TA = 25°C unless otherwise noted Test Conditions Off Characteristics BVDSS Drain-Source Breakdown Voltage ∆BVDSS ∆TJ IDSS IGSSF Breakdown Voltage Temperature Coefficient Zero Gate Voltage Drain Current Gate-Body Leakage, Forward IGSSR Gate-Body Leakage, Reverse VGS = 0 V, ID = 250 µA VGS = 0 V, ID = -250 µA ID = 250 µA, Referenced to 25°C ID = -250 µA, Referenced to 25°C VDS = 24 V, VGS = 0 V VDS = -24 V, VGS = 0 V VGS = 20 V, VDS = 0 V VGS = -20 V, VDS = 0 V On Characteristics (Note 2) VGS(th) Gate Threshold Voltage ∆VGS(th) ∆TJ RDS(on) Gate Threshold Voltage Temperature Coefficient Static Drain-Source On-Resistance ID(on) On-State Drain Current gFS Forward Transconductance VDS = VGS, VDS = VGS, ID = 250 µA ID = -250 µA ID = 250 µA, Referenced to 25°C ID = -250 µA, Referenced to 25°C VGS = 10 V, ID = 7 A VGS = 10 V, ID = 7 A, TJ = 125°C VGS = 4.5 V, ID = 6 A VGS = -10 V, ID = -5 A VGS = -10 V, ID = -5 A, TJ = 125°C VGS = -4.5 V, ID = -4 A VGS = 10 V, VDS = 5 V VGS = -10 V, VDS = -5 V VDS = 5 V, ID = 7 A VDS = -5 V, .


TSSP6038 FDS8958A_F085 QJT-CN1220


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