Document
FDS8958A_F085 Dual N & P-Channel PowerTrench® MOSFET
February 2010
FDS8958A_F085
Dual N & P-Channel PowerTrench® MOSFET
tm
General Description
These dual N- and P-Channel enhancement mode power field effect transistors are produced using Fairchild Semiconductor’s advanced PowerTrench process that has been especially tailored to minimize on-state ressitance and yet maintain superior switching performance. These devices are well suited for low voltage and battery powered applications where low in-line power loss and fast switching are required.
Features
• Q1: N-Channel
7.0A, 30V
RDS(on) = 0.028Ω @ VGS = 10V RDS(on) = 0.040Ω @ VGS = 4.5V
• Q2: P-Channel
-5A, -30V
RDS(on) = 0.052Ω @ VGS = -10V RDS(on) = 0.080Ω @ VGS = -4.5V
• Fast switching speed • High power and handling capability in a widely
used surface mount package
• Qualified to AEC Q101 • RoHS Compliant
DD1DD2DD2 DD1
SO-8
Pin 1 SO-8
SS1GS1SS2GG2
Absolute Maximum Ratings TA = 25°C unless otherwise noted
Symbol
Parameter
VDSS VGSS ID
PD
EAS TJ, TSTG
Drain-Source Voltage
Gate-Source Voltage
Drain Current - Continuous - Pulsed
Power Dissipation for Dual Operation
(Note 1a)
Power Dissipation for Single Operation
(Note 1a) (Note 1c)
Single Pulse Avalanche Energy
(Note 3)
Operating and Storage Junction Temperature Range
Thermal Characteristics
RθJA Thermal Resistance, Junction-to-Ambient RθJC Thermal Resistance, Junction-to-Case
(Note 1a) (Note 1)
Package Marking and Ordering Information
Device Marking
Device
Reel Size
FDS8958A
FDS8958A_F085
13”
©2010 Fairchild Semiconductor Corporation FDS8958A_F085 Rev. A
1
5 Q2
6
Q1
7
8
4 3 2 1
Q1 Q2
30 30 ±20 ±20
7 -5 20 -20 22 1.6 1.6 0.9 0.9 54 13
-55 to +150
Units
V V
A
W
mJ °C
78 °C/W 40 °C/W
Tape width 12mm
Quantity 2500 units
www.fairchildsemi.com
FDS8958A_F085 Dual N & P-Channel PowerTrench® MOSFET
Electrical Characteristics
Symbol
Parameter
TA = 25°C unless otherwise noted
Test Conditions
Off Characteristics
BVDSS
Drain-Source Breakdown Voltage
∆BVDSS ∆TJ
IDSS IGSSF
Breakdown Voltage Temperature Coefficient Zero Gate Voltage Drain Current Gate-Body Leakage, Forward
IGSSR
Gate-Body Leakage, Reverse
VGS = 0 V,
ID = 250 µA
VGS = 0 V,
ID = -250 µA
ID = 250 µA, Referenced to 25°C
ID = -250 µA, Referenced to 25°C
VDS = 24 V,
VGS = 0 V
VDS = -24 V,
VGS = 0 V
VGS = 20 V,
VDS = 0 V
VGS = -20 V,
VDS = 0 V
On Characteristics (Note 2)
VGS(th)
Gate Threshold Voltage
∆VGS(th) ∆TJ
RDS(on)
Gate Threshold Voltage Temperature Coefficient Static Drain-Source On-Resistance
ID(on)
On-State Drain Current
gFS Forward Transconductance
VDS = VGS, VDS = VGS,
ID = 250 µA ID = -250 µA
ID = 250 µA, Referenced to 25°C
ID = -250 µA, Referenced to 25°C
VGS = 10 V,
ID = 7 A
VGS = 10 V, ID = 7 A, TJ = 125°C
VGS = 4.5 V,
ID = 6 A
VGS = -10 V,
ID = -5 A
VGS = -10 V, ID = -5 A, TJ = 125°C
VGS = -4.5 V,
ID = -4 A
VGS = 10 V,
VDS = 5 V
VGS = -10 V,
VDS = -5 V
VDS = 5 V,
ID = 7 A
VDS = -5 V,
.