P-Channel MOSFET
Freescale
P-Channel 30-V (D-S) MOSFET
These miniature surface mount MOSFETs utilize High Cell Density process. Low rDS(o...
Description
Freescale
P-Channel 30-V (D-S) MOSFET
These miniature surface mount MOSFETs utilize High Cell Density process. Low rDS(on) assures minimal power loss and conserves energy, making this device ideal for use in power management circuitry. Typical applications are PWMDC-DC converters, power management in portable and battery-powered products such as computers, printers, battery charger, telecommunication power system, and telephones power system.
Low rDS(on) Provides Higher Efficiency and Extends Battery Life
Miniature SO-8 Surface Mount Package Saves Board Space
High power and current handling capability Extended VGS range (±25) for battery pack
applications
AO4415 / MC4415
PRODUCT SUMMARY
VDS (V)
rDS(on) m(Ω)
-30 30 @ VGS = -10V 52 @ VGS = -4.5V
ID (A) 9.5
7.5
18 27 36 45
ABSOLUTE MAXIMUM RATINGS (TA = 25 oC UNLESS OTHERWISE NOTED)
Parame te r
Symbol Maximum Units
Drain-Source Voltage Gate-Source Voltage
Continuous Drain Currenta
Pulsed Drain Currentb
VDS
VGS
TA=25oC TA=70oC
ID
IDM
-30 V ±25 9.5 8.3 A ±50
Continuous Source Current (Diode Conduction)a
IS -2.1 A
Power Dissipationa Operating Junction and Storage Temperature Range
TA=25oC TA=70oC
PD
TJ, Tstg
3.1 2.6 -55 to 150
W oC
THERMAL RESISTANCE RATINGS
Parameter
Maximum Junction-to-Casea
t <= 5 sec
Maximum Junction-to-Ambienta
t <= 10 sec
Notes a. Surface Mounted on 1” x 1” FR4 Board. b. Pulse width limited by maximum junction temperature
Symbol RθJC RθJA
Maximum 25
50
Units
oC/W oC/...
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