IRF8301MTRPBF

StrongIRFET IRF8301MTRPbF l Ultra-low RDS(on) l Low Profile (<0.7 mm) l Dual Sided Cooling Compatible  l Ultra-low Package Inductance l Optimized for high speed switching or high current switch (Power Tool) l Low Conduction and Switching Losses l Compatible with existing Surface Mount Techniques  DirectFET™ Power MOSFET ‚ Typical values (unless otherwise specified) VDSS VGS RDS(on) RDS(on) 30V max ±20V max 1.3mΩ@10V 1.9mΩ@ 4.5V MT DirectFET™ ISOMETRIC Applicable DirectFET Outline and Substrate Outline (see p.7,8 for details) SQ SX ST MQ MX MT MP Description The IRF8301MPbF combines the latest HEXFET® Power MOSFET Silicon technology with the advanced DirectFETTM packaging to achieve very low on-state resistance in a package that has the footprint of an SO-8 or a PQFN 5x6mm and only 0.7mm profile. The DirectFET package is compatible with existing layout geometries used in power applications, PCB assembly equipment and vapor phase, infra-red or convection soldering techniques, when application note AN-1035 is followed regarding the manufacturing methods and processes. The DirectFET package allows dual sided cooling to maximize thermal transfer in power systems, improving previous best thermal resistance by 80%. The IRF8301MPbF balances both low resistance and low charge along with ultra low package inductance to reduce both conduction and switching losses. The reduced total losses and very high current carrying capability make this product ideal for power tools...