IRL1404ZSPbF

Features l Logic Level l Advanced Process Technology l Ultra Low On-Resistance l 175°C Operating Temperature l Fast Switching l Repetitive Avalanche Allowed up to Tjmax l Lead-Free Description This HEXFET® Power MOSFET utilizes the latest processing techniques to achieve extremely low on-resistance per silicon area. Additional features of this design are a 175°C junction operating temperature, fast switching speed and improved repetitive avalanche rating. These features combine to make this design an extremely efficient and reliable device for use in a wide variety of applications. PD - 95446B IRL1404ZPbF IRL1404ZSPbF IRL1404ZLPbF HEXFET® Power MOSFET D VDSS = 40V RDS(on) = 3.1mΩ G ID = 120A S TO-220AB D2Pak TO-262 IRL1404ZPbF IRL1404ZSPbF IRL1404ZLPbF Absolute Maximum Ratings ID @ TC = 25°C ID @ TC = 100°C ID @ TC = 25°C IDM PD @TC = 25°C Parameter Continuous Drain Current, VGS @ 10V (Silicon Limited) Continuous Drain Current, VGS @ 10V ™Continuous Drain Current, VGS @ 10V (Package Limited) Pulsed Drain Current Power Dissipation Linear Derating Factor VGS EAS (Thermally limited) EAS (Tested ) IAR EAR TJ TSTG Gate-to-Source Voltage dSingle Pulse Avalanche Energy hSingle Pulse Avalanche Energy Tested Value ÙAvalanche Current gRepetitive Avalanche Energy Operating Junction and Storage Temperature Range Soldering Temperature, for 10 seconds Mounting Torque, 6-32 or M3 screw Thermal Resistance RθJC RθCS RθJA RθJA Parameter Junction-to-Case iCase-to-Sink, Flat, Greas...