DatasheetsPDF.com

IRF6893MPbF Dataheets PDF



Part Number IRF6893MPbF
Manufacturers International Rectifier
Logo International Rectifier
Description MOSFET
Datasheet IRF6893MPbF DatasheetIRF6893MPbF Datasheet (PDF)

PD - 97761 IRF6893MPbF IRF6893MTRPbF DirectFET®plus MOSFET with Schottky Diode ‚ l RoHs Compliant Containing No Lead and Bromide  Typical values (unless otherwise specified) l Integrated Monolithic Schottky Diode l Low Profile (<0.7 mm) l Dual Sided Cooling Compatible  l Low Package Inductance l Optimized for High Frequency Switching  VDSS VGS RDS(on) RDS(on) 25V max ±16V max 1.2m@ 10V 1.6m@ 4.5V Qg tot Qgd Qgs2 Qrr Qoss Vgs(th) 25nC 8.5nC 2.5nC 36nC 29nC 1.6V l Ideal for CPU Co.

  IRF6893MPbF   IRF6893MPbF


Document
PD - 97761 IRF6893MPbF IRF6893MTRPbF DirectFET®plus MOSFET with Schottky Diode ‚ l RoHs Compliant Containing No Lead and Bromide  Typical values (unless otherwise specified) l Integrated Monolithic Schottky Diode l Low Profile (<0.7 mm) l Dual Sided Cooling Compatible  l Low Package Inductance l Optimized for High Frequency Switching  VDSS VGS RDS(on) RDS(on) 25V max ±16V max 1.2m@ 10V 1.6m@ 4.5V Qg tot Qgd Qgs2 Qrr Qoss Vgs(th) 25nC 8.5nC 2.5nC 36nC 29nC 1.6V l Ideal for CPU Core DC-DC Converters l Optimized for Sync. FET socket of Sync. Buck Converter l Low Conduction and Switching Losses l Compatible with existing Surface Mount Techniques  l 100% Rg tested l Footprint compatible to DirectFET™ MX ISOMETRIC Applicable DirectFET Outline and Substrate Outline (see p.7,8 for details) SQ SX ST MQ MX MT MP Description The IRF6893MPbF combines the latest HEXFET® Power MOSFET Silicon technology with the advanced DirectFETTM packaging to achieve the lowest on-state resistance in a package that has the footprint of a SO-8 and less than 0.7 mm profile. The DirectFET package is compatible with existing layout geometries used in power applications, PCB assembly equipment and vapor phase, infra-red or convection soldering techniques. Application note AN-1035 is followed regarding the manufacturing methods and processes. The DirectFET package allows dual sided cooling to maximize thermal transfer in power systems, improving previous best thermal resistance by 80%. The IRF6893MPbF balances industry leading on-state resistance while minimizing gate charge along with low gate resistance to reduce both conduction and switching losses. This part contains an integrated Schottky diode to reduce the Qrr of the body drain diode further reducing the losses in a Synchronous Buck circuit. The reduced losses make this product ideal for high frequency/high efficiency DC-DC converters that power high current loads such as the latest generation of microprocessors. The IRF6893MPbF has been optimized for parameters that are critical in synchronous buck converter’s Sync FET sockets. Absolute Maximum Ratings Parameter Max. Units VDS VGS ID @ TA = 25°C ID @ TA = 70°C ID @ TC = 25°C IDM EAS IAR Drain-to-Source Voltage Gate-to-Source Voltage eContinuous Drain Current, VGS @ 10V eContinuous Drain Current, VGS @ 10V fContinuous Drain Current, VGS @ 10V gPulsed Drain Current hSingle Pulse Avalanche Energy ÃgAvalanche Current 25 V ±16 29 23 A 168 230 370 mJ 23 A Typical RDS(on) (m) VGS, Gate-to-Source Voltage (V) 5 ID = 29A 4 3 TJ = 125°C 2 1 TJ = 25°C 0 0 2 4 6 8 10 12 14 16 VGS, Gate -to -Source Voltage (V) Fig 1. Typical On-Resistance vs. Gate Voltage Notes:  Click on this section to link to the appropriate technical paper. ‚ Click on this section to link to the DirectFET Website. ƒ Surface mounted on 1 in. square Cu board, steady state. www.irf.com 14.0 12.0 ID= 23A 10.0 8.0 VDS= 20V VDS= 13V VDS= 5.0V 6.0 4.0 2.0 0.0 0 10 20 30 40 50 60 70 QG Total Gate Charge (nC) Fig 2. Typical Total Gate Charge vs. Gate-to-Source Voltage „ TC measured with thermocouple mounted to top (Drain) of part. … Repetitive rating; pulse width limited by max. junction temperature. † Starting TJ = 25°C, L = 1.4mH, RG = 50, IAS = 23A. 1 02/22/12 IRF6893MTRPbF Static @ TJ = 25°C (unless otherwise specified) Parameter Min. BVDSS VDSS/TJ RDS(on) Drain-to-Source Breakdown Voltage Breakdown Voltage Temp. Coefficient Static Drain-to-Source On-Resistance 25 ––– ––– ––– VGS(th) VGS(th)/TJ IDSS IGSS Gate Threshold Voltage Gate Threshold Voltage Coefficient Drain-to-Source Leakage Current Gate-to-Source Forward Leakage Gate-to-Source Reverse Leakage 1.1 ––– ––– ––– ––– gfs Forward Transconductance 110 Qg Total Gate Charge Qgs1 Pre-Vth Gate-to-Source Charge Qgs2 Post-Vth Gate-to-Source Charge Qgd Gate-to-Drain Charge Qgodr Gate Charge Overdrive Qsw Switch Charge (Qgs2 + Qgd) Qoss Output Charge RG Gate Resistance td(on) Turn-On Delay Time tr Rise Time td(off) Turn-Off Delay Time tf Fall Time Ciss Input Capacitance Coss Output Capacitance Crss Reverse Transfer Capacitance Diode Characteristics Parameter ––– ––– ––– ––– ––– ––– ––– ––– ––– ––– ––– ––– ––– ––– ––– Min. IS Continuous Source Current ––– (Body Diode) ISM Pulsed Source Current Ãg(Body Diode) ––– VSD Diode Forward Voltage trr Reverse Recovery Time Qrr Reverse Recovery Charge ––– ––– ––– Typ. ––– 0.02 1.2 1.6 1.6 -3.9 ––– ––– ––– ––– 25 5.9 2.5 8.5 8.1 11 29 0.47 18 83 19 33 3480 1140 210 Typ. ––– ––– ––– 22 36 Max. ––– ––– 1.6 2.1 2.1 ––– 250 100 -100 ––– 38 ––– ––– ––– ––– ––– ––– ––– ––– ––– ––– ––– ––– ––– ––– Units Conditions V VGS = 0V, ID = 1.0mA V/°C m ID = 10mA ( 25°C-125°C) iVGS = 10V, ID = 29A iVGS = 4.5V, ID = 23A V VDS = VGS, ID = 100μA mV/°C VDS = VGS, ID = 10mA μA VDS = 20V, VGS = 0V nA VGS = 16V VGS = -16V S VDS =13V, ID = 23A VDS = 13V nC VGS = 4.5V ID = 23A nC VDS = 16V, VGS = 0V i VDD = 13V, .


NP84N075NUE IRF6893MPbF IRF6893MTRPbF


@ 2014 :: Datasheetspdf.com :: Semiconductors datasheet search & download site.
(Privacy Policy & Contact)