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IRF8306MPbF
HEXFET® Power MOSFET plus Schottky Diode l RoHS Compliant Containing No Lead and Halogen Free Typical values (unless otherwise specified)
l Integrated Monolithic Schottky Diode l Low Profile (<0.7 mm) l Dual Sided Cooling Compatible l Ultra Low Package Inductance
VDSS
VGS
RDS(on)
RDS(on)
30V max ±20V max 1.8mΩ@ 10V 2.8mΩ@ 4.5V
Qg tot Qgd
Qgs2
Qrr
Qoss Vgs(th)
l Optimized for High Frequency Switching
25nC 6.7nC 3.0nC 29nC 22nC 1.8V
l Ideal for CPU Core DC-DC Converters
l Optimized for Sync. FET socket of Sync. Buck Converter l Low Conduction and Switching Losses l Compatible with existing Surface Mount Techniques
G D
S SD
l 100% Rg tested Applicable DirectFET Outline and Substrate Outline (see p.7,8 for details)
MX
DirectFET ISOMETRIC
SQ SX ST
MQ MX MT MP
Description
The IRF8306MPbF combines the latest HEXFET® Power MOSFET Silicon technology with the advanced DirectFETTM packaging to achieve the lowest on-state resistance in a package that has the footprint of a SO-8 and only 0.7 mm profile. The DirectFET package is compatible with existing layout geometries used in power applications, PCB assembly equipment and vapor phase, infra-red or convection soldering techniques. Application note AN-1035 is followed regarding the manufacturing methods and processes. The DirectFET package allows dual sided cooling to maximize thermal transfer in power systems, improving previous best thermal resistance by 80%. The IRF8306MPbF balances industry leading on-state resistance while minimizing gate charge along with ultra low package inductance to reduce both conduction and switching losses. This part contains an integrated Schottky diode to reduce the Qrr of the body drain diode further reducing the losses in a Synchronous Buck circuit. The reduced losses make this product ideal for high frequency/high efficiency DC-DC converters that power high current loads such as the latest generation of microprocessors. The IRF8306MPbF has been optimized for
parameters that are critical in synchronous buck converter’s Sync FET sockets.
Typical RDS(on) (mΩ) VGS, Gate-to-Source Voltage (V)
Orderable part number
IRF8306MTRPbF IRF8306MTR1PbF
Package Type
DirectFET MX DirectFET MX
Standard Pack
Form
Quantity
Tape and Reel
4800
Tape and Reel
1000
Note
"TR" suffix "TR1" suffix EOL notice # 264
Absolute Maximum Ratings
VDS VGS ID @ TA = 25°C ID @ TA = 70°C ID @ TC = 25°C IDM EAS IAR
10
8
6
Parameter Drain-to-Source Voltage Gate-to-Source Voltage
eContinuous Drain Current, VGS @ 10V eContinuous Drain Current, VGS @ 10V fContinuous Drain Current, VGS @ 10V gPulsed Drain Current hSingle Pulse Avalanche Energy ÃgAvalanche Current
ID = 23A
14.0 12.0 ID= 18A
10.0
8.0
Max. 30 ±20 23 18 140 180 230 18
VDS= 24V VDS= 15V VDS= 6V
Units V
A
mJ A
4 TJ = 125°C
2 TJ = 25°C
0 2468
10 12 14 16 18 20
6.0
4.0 2.0 0.0
0
20 40 60 80
VGS, Gate -to -Source Voltage (V) Fig 1. Typical On-Resistance vs. Gate Voltage
Notes: Click on this section to link to the appropriate technical paper. Click on this section to link to the DirectFET Website. Surface mounted on 1 in. square Cu board, steady state.
QG Total Gate Charge (nC) Fig 2. Typical Total Gate Charge vs. Gate-to-Source Voltage
TC measured with thermocouple mounted to top (Drain) of part.
Repetitive rating; pulse width limited by max. junction temperature. Starting TJ = 25°C, L = 1.37mH, RG = 50Ω, IAS = 18A.
1
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May 7, 2014
IRF8306MPbF
Static @ TJ = 25°C (unless otherwise specified)
Parameter
Min.
BVDSS ΔΒVDSS/ΔTJ RDS(on)
Drain-to-Source Breakdown Voltage Breakdown Voltage Temp. Coefficient Static Drain-to-Source On-Resistance
30 ––– ––– –––
VGS(th)
ΔVGS(th)/ΔTJ IDSS
Gate Threshold Voltage Gate Threshold Voltage Coefficient Drain-to-Source Leakage Current
1.35 ––– ––– –––
IGSS
Gate-to-Source Forward Leakage
–––
Gate-to-Source Reverse Leakage
–––
gfs Forward Transconductance
61
Qg Total Gate Charge
Qgs1 Pre-Vth Gate-to-Source Charge
Qgs2 Post-Vth Gate-to-Source Charge
Qgd Gate-to-Drain Charge
Qgodr
Gate Charge Overdrive
Qsw Switch Charge (Qgs2 + Qgd)
Qoss Output Charge
RG Gate Resistance
td(on)
Turn-On Delay Time
tr Rise Time
td(off)
Turn-Off Delay Time
tf Fall Time
Ciss Input Capacitance
Coss Output Capacitance
Crss Reverse Transfer Capacitance
Diode Characteristics
––– ––– ––– ––– ––– ––– ––– ––– ––– ––– ––– ––– ––– ––– –––
Parameter
Min.
IS Continuous Source Current ––– (Body Diode)
ISM Pulsed Source Current
Ãg(Body Diode)
–––
VSD Diode Forward Voltage trr Reverse Recovery Time Qrr Reverse Recovery Charge
––– ––– –––
Typ. ––– 2.7 1.8 2.8 1.8 -4.8 ––– ––– ––– ––– ––– 25 7.3 3.0 6.7 8.0 9.7 22 1.3 16 34 19 19 4110 970 340
Typ. –––
–––
0.7 21 29
Max. Units
Conditions
––– ––– 2.5 3.6 2.35 ––– 500 5.0 100 -100 –––
V VGS = 0V, ID = 1.0mA mV/°C Reference to 25°C, ID = 6mA
imΩ VGS = 10V, ID = 23A iVGS = 4.5V, ID = 18A
V VD.