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IRF8306MPBF Dataheets PDF



Part Number IRF8306MPBF
Manufacturers International Rectifier
Logo International Rectifier
Description Power MOSFET
Datasheet IRF8306MPBF DatasheetIRF8306MPBF Datasheet (PDF)

IRF8306MPbF HEXFET® Power MOSFET plus Schottky Diode ‚ l RoHS Compliant Containing No Lead and Halogen Free  Typical values (unless otherwise specified) l Integrated Monolithic Schottky Diode l Low Profile (<0.7 mm) l Dual Sided Cooling Compatible  l Ultra Low Package Inductance VDSS VGS RDS(on) RDS(on) 30V max ±20V max 1.8mΩ@ 10V 2.8mΩ@ 4.5V Qg tot Qgd Qgs2 Qrr Qoss Vgs(th) l Optimized for High Frequency Switching  25nC 6.7nC 3.0nC 29nC 22nC 1.8V l Ideal for CPU Core DC-DC Conv.

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IRF8306MPbF HEXFET® Power MOSFET plus Schottky Diode ‚ l RoHS Compliant Containing No Lead and Halogen Free  Typical values (unless otherwise specified) l Integrated Monolithic Schottky Diode l Low Profile (<0.7 mm) l Dual Sided Cooling Compatible  l Ultra Low Package Inductance VDSS VGS RDS(on) RDS(on) 30V max ±20V max 1.8mΩ@ 10V 2.8mΩ@ 4.5V Qg tot Qgd Qgs2 Qrr Qoss Vgs(th) l Optimized for High Frequency Switching  25nC 6.7nC 3.0nC 29nC 22nC 1.8V l Ideal for CPU Core DC-DC Converters l Optimized for Sync. FET socket of Sync. Buck Converter l Low Conduction and Switching Losses l Compatible with existing Surface Mount Techniques  G D S SD l 100% Rg tested Applicable DirectFET Outline and Substrate Outline (see p.7,8 for details) MX DirectFET™ ISOMETRIC SQ SX ST MQ MX MT MP Description The IRF8306MPbF combines the latest HEXFET® Power MOSFET Silicon technology with the advanced DirectFETTM packaging to achieve the lowest on-state resistance in a package that has the footprint of a SO-8 and only 0.7 mm profile. The DirectFET package is compatible with existing layout geometries used in power applications, PCB assembly equipment and vapor phase, infra-red or convection soldering techniques. Application note AN-1035 is followed regarding the manufacturing methods and processes. The DirectFET package allows dual sided cooling to maximize thermal transfer in power systems, improving previous best thermal resistance by 80%. The IRF8306MPbF balances industry leading on-state resistance while minimizing gate charge along with ultra low package inductance to reduce both conduction and switching losses. This part contains an integrated Schottky diode to reduce the Qrr of the body drain diode further reducing the losses in a Synchronous Buck circuit. The reduced losses make this product ideal for high frequency/high efficiency DC-DC converters that power high current loads such as the latest generation of microprocessors. The IRF8306MPbF has been optimized for parameters that are critical in synchronous buck converter’s Sync FET sockets. Typical RDS(on) (mΩ) VGS, Gate-to-Source Voltage (V) Orderable part number IRF8306MTRPbF IRF8306MTR1PbF Package Type DirectFET MX DirectFET MX Standard Pack Form Quantity Tape and Reel 4800 Tape and Reel 1000 Note "TR" suffix "TR1" suffix EOL notice # 264 Absolute Maximum Ratings VDS VGS ID @ TA = 25°C ID @ TA = 70°C ID @ TC = 25°C IDM EAS IAR 10 8 6 Parameter Drain-to-Source Voltage Gate-to-Source Voltage eContinuous Drain Current, VGS @ 10V eContinuous Drain Current, VGS @ 10V fContinuous Drain Current, VGS @ 10V gPulsed Drain Current hSingle Pulse Avalanche Energy ÃgAvalanche Current ID = 23A 14.0 12.0 ID= 18A 10.0 8.0 Max. 30 ±20 23 18 140 180 230 18 VDS= 24V VDS= 15V VDS= 6V Units V A mJ A 4 TJ = 125°C 2 TJ = 25°C 0 2468 10 12 14 16 18 20 6.0 4.0 2.0 0.0 0 20 40 60 80 VGS, Gate -to -Source Voltage (V) Fig 1. Typical On-Resistance vs. Gate Voltage Notes:  Click on this section to link to the appropriate technical paper. ‚ Click on this section to link to the DirectFET Website. ƒ Surface mounted on 1 in. square Cu board, steady state. QG Total Gate Charge (nC) Fig 2. Typical Total Gate Charge vs. Gate-to-Source Voltage „ TC measured with thermocouple mounted to top (Drain) of part. … Repetitive rating; pulse width limited by max. junction temperature. † Starting TJ = 25°C, L = 1.37mH, RG = 50Ω, IAS = 18A. 1 www.irf.com © 2014 International Rectifier Submit Datasheet Feedback May 7, 2014 IRF8306MPbF Static @ TJ = 25°C (unless otherwise specified) Parameter Min. BVDSS ΔΒVDSS/ΔTJ RDS(on) Drain-to-Source Breakdown Voltage Breakdown Voltage Temp. Coefficient Static Drain-to-Source On-Resistance 30 ––– ––– ––– VGS(th) ΔVGS(th)/ΔTJ IDSS Gate Threshold Voltage Gate Threshold Voltage Coefficient Drain-to-Source Leakage Current 1.35 ––– ––– ––– IGSS Gate-to-Source Forward Leakage ––– Gate-to-Source Reverse Leakage ––– gfs Forward Transconductance 61 Qg Total Gate Charge Qgs1 Pre-Vth Gate-to-Source Charge Qgs2 Post-Vth Gate-to-Source Charge Qgd Gate-to-Drain Charge Qgodr Gate Charge Overdrive Qsw Switch Charge (Qgs2 + Qgd) Qoss Output Charge RG Gate Resistance td(on) Turn-On Delay Time tr Rise Time td(off) Turn-Off Delay Time tf Fall Time Ciss Input Capacitance Coss Output Capacitance Crss Reverse Transfer Capacitance Diode Characteristics ––– ––– ––– ––– ––– ––– ––– ––– ––– ––– ––– ––– ––– ––– ––– Parameter Min. IS Continuous Source Current ––– (Body Diode) ISM Pulsed Source Current Ãg(Body Diode) ––– VSD Diode Forward Voltage trr Reverse Recovery Time Qrr Reverse Recovery Charge ––– ––– ––– Typ. ––– 2.7 1.8 2.8 1.8 -4.8 ––– ––– ––– ––– ––– 25 7.3 3.0 6.7 8.0 9.7 22 1.3 16 34 19 19 4110 970 340 Typ. ––– ––– 0.7 21 29 Max. Units Conditions ––– ––– 2.5 3.6 2.35 ––– 500 5.0 100 -100 ––– V VGS = 0V, ID = 1.0mA mV/°C Reference to 25°C, ID = 6mA imΩ VGS = 10V, ID = 23A iVGS = 4.5V, ID = 18A V VD.


3DD13012AN IRF8306MPBF FQA7N80C_F109


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