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60R900P Dataheets PDF



Part Number 60R900P
Manufacturers MagnaChip
Logo MagnaChip
Description MMD60R900P
Datasheet 60R900P Datasheet60R900P Datasheet (PDF)

MMD60R900P Datasheet MMD60R900P 600V 0.9Ω N-channel MOSFET  Description MMD60R900P is power MOSFET using magnachip’s advanced super junction technology that can realize very low on-resistance and gate charge. It will provide much high efficiency by using optimized charge coupling technology. These user friendly devices give an advantage of Low EMI to designers as well as low switching loss.  Key Parameters Parameter VDS @ Tj,max RDS(on),max VTH,typ ID Qg,typ Value 650 0.9 3 4.5 12.3 Unit .

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MMD60R900P Datasheet MMD60R900P 600V 0.9Ω N-channel MOSFET  Description MMD60R900P is power MOSFET using magnachip’s advanced super junction technology that can realize very low on-resistance and gate charge. It will provide much high efficiency by using optimized charge coupling technology. These user friendly devices give an advantage of Low EMI to designers as well as low switching loss.  Key Parameters Parameter VDS @ Tj,max RDS(on),max VTH,typ ID Qg,typ Value 650 0.9 3 4.5 12.3 Unit V Ω V A nC  Package & Internal Circuit D G DS G S  Features  Low Power Loss by High Speed Switching and Low On-Resistance  100% Avalanche Tested  Green Package – Pb Free Plating, Halogen Free  Applications  PFC Power Supply Stages  Switching Applications  Adapter  Motor Control  DC – DC Converters  Ordering Information Order Code Marking MMD60R900PRH 60R900P Temp. Range -55 ~ 150℃ Package TO-252 (DPAK) Packing Reel & Tube RoHS Status Halogen Free Jul. 2013 Revision 1.0 1 MagnaChip Semiconductor Ltd. MMD60R900P Datasheet  Absolute Maximum Rating (Tc=25℃ unless otherwise specified) Parameter Drain – Source voltage Gate – Source voltage Continuous drain current Pulsed drain current(1) Power dissipation Single - pulse avalanche energy MOSFET dv/dt ruggedness Symbol VDSS VGSS ID IDM PD EAS dv/dt Rating 600 ±30 4.5 2.7 13.5 38 46 50 Unit V V A A A W mJ V/ns Note TC=25℃ TC=100℃ Diode dv/dt ruggedness Storage temperature Maximum operating junction temperature 1) Pulse width tP limited by Tj,max 2) ISD ≤ ID, VDS peak ≤ V(BR)DSS dv/dt Tstg Tj 15 -55 ~150 150 V/ns ℃ ℃  Thermal Characteristics Parameter Thermal resistance, junction-case max Thermal resistance, junction-ambient max Symbol Rthjc Rthja Value 3.25 62.5 Unit ℃/W ℃/W Jul. 2013 Revision 1.0 2 MagnaChip Semiconductor Ltd. MMD60R900P Datasheet  Static Characteristics (Tc=25℃ unless otherwise specified) Parameter Drain – Source Breakdown voltage Gate Threshold Voltage Zero Gate Voltage Drain Current Gate Leakage Current Drain-Source On State Resistance Symbol Min. Typ. Max. Unit Test Condition V(BR)DSS VGS(th) IDSS IGSS RDS(ON) 600 - - 234 - -1 - - 100 - 0.81 0.9 V VGS = 0V, ID=0.25mA V VDS = VGS, ID=0.25mA μA VDS = 600V, VGS = 0V nA VGS = ±30V, VDS =0V Ω VGS = 10V, ID = 1.5A  Dynamic Characteristics (Tc=25℃ unless otherwise specified) Parameter Symbol Min. Typ. Max. Unit Test Condition Input Capacitance Output Capacitance Reverse Transfer Capacitance Effective Output Capacitance Energy Related (3) Turn On Delay Time Ciss Coss Crss Co(er) td(on) - 396 - 306 - 19 - 17 - 15 - VDS = 25V, VGS = 0V, pF f = 1.0MHz VDS = 0V to 480V, VGS = 0V,f = 1.0MHz Rise Time Turn Off Delay Time tr td(off) - 29 - 151 - ns VGS = 10V, RG = 25Ω, VDS = 300V, ID = 4.5A Fall Time tf - 34 - Total Gate Charge Gate – Source Charge Gate – Drain Charge Qg - 12.3 - Qgs - 2.3 - nC VGS = 10V, VDS =480V ID = 4.5A Qgd - 6 - Gate Resistance RG - 4.7 - Ω VGS = 0V, f = 1.0MHz 3) Co(er) is a capacitance that gives the same stored energy as COSS while VDS is rising from 0V to 80% V(BR)DSS Jul. 2013 Revision 1.0 3 MagnaChip Semiconductor Ltd. MMD60R900P Datasheet  Reverse Diode Characteristics (Tc=25℃ unless otherwise specified) Parameter Continuous Diode Forward Current Diode Forward Voltage Reverse Recovery Time Reverse Recovery Charge Reverse Recovery Current Symbol Min. Typ. Max. Unit Test Condition ISD - - 4.5 A VSD - - 1.4 V ISD = 4.5 A, VGS = 0 V trr - 232 - ns ISD = 4.5 A Qrr - 1.4 - μC di/dt = 100 A/μs VDD = 100 V Irrm - 12.4 - A Jul. 2013 Revision 1.0 4 MagnaChip Semiconductor Ltd.  Characteristic Graph MMD60R900P Datasheet Jul. 2013 Revision 1.0 5 MagnaChip Semiconductor Ltd. MMD60R900P Datasheet Jul. 2013 Revision 1.0 6 MagnaChip Semiconductor Ltd. MMD60R900P Datasheet Jul. 2013 Revision 1.0 7 MagnaChip Semiconductor Ltd.  Test Circuit Same type as DUT 100KΩ 10V 1mA 10V DUT + VDS - Fig15-1. Gate charge measurement circuit MMD60R900P Datasheet VGS 10V Qgs Qg Qgd Charge Fig15-2. Gate charge waveform DUT IS Rg 10KΩ Vgs ± 15V IF + - VDS L Same type as DUT + VDD - Fig16-1. Diode reverse recovery test circuit DUT Rg 25Ω ID VDS RL trr IFM 0.5 IRM ta tb di/dt 0.75 IRM 0.25 IRM IRM VR VRM(REC) Fig16-1. Diode reverse recovery test waveform VDS 90% Vgs tp + VDD - 10% VGS Fig17-1. Switching time test circuit for resistive load IAS DUT VDS Rg L Td(on) tr ton Td(off) tf toff Fig17-2. Switching time waveform tp IAS BVDSS tAV Vgs tp + VDD - VDD Fig18-1. Unclamped inductive load test circuit Jul. 2013 Revision 1.0 8 VDS(t) Rds(on) * IAS Fig18-2. Unclamped inductive waveform MagnaChip Semiconductor Ltd.  Physical Dimension MMD60R900P Datasheet TO-252 (D-PAK) , 3L Dimensions are in millimeters, unless otherwise specified Worldwide Sales Support Locations Jul. 2013 Revision 1.0 9 MagnaChip Semiconductor Ltd. MMD60R900P Datasheet DISCLAIMER: The .


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