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MMD60R900P Datasheet
MMD60R900P
600V 0.9Ω N-channel MOSFET
Description
MMD60R900P is power MOSFET using magnachip’s advanced super junction technology that can realize very low on-resistance and gate charge. It will provide much high efficiency by using optimized charge coupling technology. These user friendly devices give an advantage of Low EMI to designers as well as low switching loss.
Key Parameters
Parameter VDS @ Tj,max RDS(on),max
VTH,typ ID
Qg,typ
Value 650 0.9
3 4.5 12.3
Unit V Ω V A nC
Package & Internal Circuit D
G DS
G S
Features
Low Power Loss by High Speed Switching and Low On-Resistance 100% Avalanche Tested Green Package – Pb Free Plating, Halogen Free
Applications
PFC Power Supply Stages Switching Applications Adapter Motor Control DC – DC Converters
Ordering Information
Order Code
Marking
MMD60R900PRH 60R900P
Temp. Range -55 ~ 150℃
Package
TO-252 (DPAK)
Packing Reel & Tube
RoHS Status Halogen Free
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MMD60R900P Datasheet
Absolute Maximum Rating (Tc=25℃ unless otherwise specified)
Parameter Drain – Source voltage Gate – Source voltage
Continuous drain current
Pulsed drain current(1) Power dissipation Single - pulse avalanche energy MOSFET dv/dt ruggedness
Symbol VDSS VGSS
ID
IDM PD EAS dv/dt
Rating 600 ±30 4.5 2.7 13.5 38 46 50
Unit V V A A A W mJ
V/ns
Note
TC=25℃ TC=100℃
Diode dv/dt ruggedness
Storage temperature
Maximum operating junction temperature
1) Pulse width tP limited by Tj,max 2) ISD ≤ ID, VDS peak ≤ V(BR)DSS
dv/dt Tstg Tj
15 -55 ~150
150
V/ns ℃ ℃
Thermal Characteristics
Parameter Thermal resistance, junction-case max Thermal resistance, junction-ambient max
Symbol Rthjc Rthja
Value 3.25 62.5
Unit ℃/W ℃/W
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MMD60R900P Datasheet
Static Characteristics (Tc=25℃ unless otherwise specified)
Parameter
Drain – Source Breakdown voltage
Gate Threshold Voltage
Zero Gate Voltage Drain Current
Gate Leakage Current
Drain-Source On State Resistance
Symbol Min. Typ. Max. Unit Test Condition
V(BR)DSS VGS(th) IDSS IGSS RDS(ON)
600 -
-
234
- -1
- - 100
- 0.81 0.9
V VGS = 0V, ID=0.25mA V VDS = VGS, ID=0.25mA μA VDS = 600V, VGS = 0V nA VGS = ±30V, VDS =0V Ω VGS = 10V, ID = 1.5A
Dynamic Characteristics (Tc=25℃ unless otherwise specified)
Parameter
Symbol Min. Typ. Max. Unit Test Condition
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance Effective Output Capacitance Energy Related (3) Turn On Delay Time
Ciss Coss Crss Co(er) td(on)
- 396 - 306 - 19 - 17 - 15 -
VDS = 25V, VGS = 0V, pF f = 1.0MHz
VDS = 0V to 480V, VGS = 0V,f = 1.0MHz
Rise Time Turn Off Delay Time
tr td(off)
- 29 - 151 -
ns
VGS = 10V, RG = 25Ω, VDS = 300V, ID = 4.5A
Fall Time
tf - 34 -
Total Gate Charge Gate – Source Charge Gate – Drain Charge
Qg - 12.3 -
Qgs
- 2.3 -
nC
VGS = 10V, VDS =480V ID = 4.5A
Qgd - 6 -
Gate Resistance
RG
- 4.7 -
Ω VGS = 0V, f = 1.0MHz
3) Co(er) is a capacitance that gives the same stored energy as COSS while VDS is rising from 0V to 80% V(BR)DSS
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MMD60R900P Datasheet
Reverse Diode Characteristics (Tc=25℃ unless otherwise specified)
Parameter Continuous Diode Forward Current Diode Forward Voltage
Reverse Recovery Time
Reverse Recovery Charge
Reverse Recovery Current
Symbol Min. Typ. Max. Unit Test Condition
ISD - - 4.5 A
VSD - - 1.4 V ISD = 4.5 A, VGS = 0 V
trr
- 232 -
ns
ISD = 4.5 A
Qrr
- 1.4 -
μC di/dt = 100 A/μs
VDD = 100 V
Irrm
- 12.4 -
A
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Characteristic Graph
MMD60R900P Datasheet
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MMD60R900P Datasheet
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MMD60R900P Datasheet
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Test Circuit
Same type as DUT
100KΩ 10V
1mA 10V
DUT
+ VDS
-
Fig15-1. Gate charge measurement circuit
MMD60R900P Datasheet
VGS 10V
Qgs
Qg Qgd
Charge
Fig15-2. Gate charge waveform
DUT
IS Rg 10KΩ
Vgs ± 15V
IF + - VDS L
Same type as DUT
+ VDD
-
Fig16-1. Diode reverse recovery test circuit
DUT
Rg 25Ω
ID
VDS RL
trr
IFM
0.5 IRM
ta
tb
di/dt 0.75 IRM
0.25 IRM IRM
VR VRM(REC)
Fig16-1. Diode reverse recovery test waveform
VDS 90%
Vgs tp
+ VDD
-
10% VGS
Fig17-1. Switching time test circuit for resistive load
IAS
DUT
VDS
Rg
L
Td(on)
tr
ton
Td(off) tf toff
Fig17-2. Switching time waveform
tp IAS
BVDSS tAV
Vgs tp
+ VDD
-
VDD
Fig18-1. Unclamped inductive load test circuit
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VDS(t)
Rds(on) * IAS
Fig18-2. Unclamped inductive waveform MagnaChip Semiconductor Ltd.
Physical Dimension
MMD60R900P Datasheet
TO-252 (D-PAK) , 3L
Dimensions are in millimeters, unless otherwise specified
Worldwide Sales Support Locations
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MMD60R900P Datasheet
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