MDP18N50

MDP18N50 N-channel MOSFET 500V Preliminary – Subject to change without notice MDP18N50 N-Channel MOSFET 500V, 18.0 A, 0.27Ω General Description The MDP18N50 uses advanced Magnachip’s MOSFET Technology, which provides low onstate resistance, high switching performance and excellent quality. MDP18N50 is suitable device for SMPS, HID and general purpose applications. Features VDS = 500V ID = 18.0A @VGS = 10V RDS(ON) < 0.27Ω @VGS = 10V Applications Power Supply HID Lighting Absolute Maximum Ratings (Ta = 25oC) Characteristics Drain-Source Voltage Gate-Source Voltage Continuous Drain Current Pulsed Drain Current(1) Power Dissipation Peak Diode Recovery dv/dt(3) Single Pulse Avalanche Energy(4) Junction and Storage Temperature Range Thermal Characteristics Characteristics Thermal Resistance, Junction-to-Ambient(1) Thermal Resistance, Junction-to-Case(1) TC=25oC TC=100oC TC=25oC Derate above 25 oC Symbol VDSS VGSS ID IDM PD Dv/dt EAS TJ, Tstg Rating 500 ±30 18 11 72 236 1.89 4.5 950 -55~150 Unit V V A A 72 W W/ oC V/ns mJ oC Symbol RθJA RθJC Rating 62.5 0.53 Unit oC/W Ordering Information Part Number MDP18N50 Feb2009. Version 1.0 Temp. Range -55~150oC 1 Package TO-220 Packing Tube MagnaChip Semiconductor Ltd. MDP18N50 N-channel MOSFET 500V Preliminary – Subject to change without notice Electrical Characteristics (Ta =25oC) Characteristics Symbol Static Characteristics Drain-Source Breakdown Voltage BVDSS Gate Threshold Voltage VGS(th) Drain Cut-Off Current ...