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MM3Z22 Dataheets PDF



Part Number MM3Z22
Manufacturers JINAN JINGHENG ELECTRONICS
Logo JINAN JINGHENG ELECTRONICS
Description 0.3W SILICON PLANAR ZENER DIODES
Datasheet MM3Z22 DatasheetMM3Z22 Datasheet (PDF)

R SEMICONDUCTOR MM3Z2V0 THRU MM3Z120 0.3W SILICON PLANAR ZENER DIODES FEATURES Total power dissipation:max.300 mW Small plastic package suitable for surface mounted design Tolerance approximately ±5% JF High temperature soldering guaranteed:260℃/10 seconds at terminals Component in accordance to RoHS 2002/95/EC and WEEE 2002/96/EC MECHANICAL DATA Case: SOD-323 plastic case Weight: Approx. 0.004 gram SOD-323 (0.35 +0.05 -0.05 ) 0.014"+-00..000022"" (1.70±0.10( 0.067"+-0.004 0.006"(0.

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R SEMICONDUCTOR MM3Z2V0 THRU MM3Z120 0.3W SILICON PLANAR ZENER DIODES FEATURES Total power dissipation:max.300 mW Small plastic package suitable for surface mounted design Tolerance approximately ±5% JF High temperature soldering guaranteed:260℃/10 seconds at terminals Component in accordance to RoHS 2002/95/EC and WEEE 2002/96/EC MECHANICAL DATA Case: SOD-323 plastic case Weight: Approx. 0.004 gram SOD-323 (0.35 +0.05 -0.05 ) 0.014"+-00..000022"" (1.70±0.10( 0.067"+-0.004 0.006"(0.150) MAX (2.55±0.25) 0.100"±0.010" 5° (1.25+-00..1100 ) 0.049"+-00..000044"" (0.95±0.15) 0.037"±0.006" Dimensions in inches and (millimeters) ABSOLUTE MAXIMUM RATINGS(LIMITING VALUES) (TA=25 C) Zener current see table "Characteristics" Power dissipation Junction temperature Storage temperature range Symbols Ptot TJ TSTG Value 300 150 -55 to+150 Units mW C C ELECTRICAL CHARACTERISTICS (TA=25 C) Thermal resistance junction to ambient Forward voltage at IF=10mA Symbols RθJA VF Min Typ Max Units 300 K/W 0.9 V JINAN JINGHENG ELECTRONICS CO., LTD. 10-51 HTTP://WWW.JINGHENGGROUP.COM MM3Z... SILICON PLANAR ZENER DIODES Type MM3Z2V0 MM3Z2V2 MM3Z2V4 MM3Z2V7 MM3Z3V0 MM3Z3V3 MM3Z3V6 MM3Z3V9 MM3Z4V3 MM3Z4V7 MM3Z5V1 MM3Z5V6 MM3Z6V2 MM3Z6V8 MM3Z7V5 MM3Z8V2 MM3Z9V1 MM3Z10 MM3Z11 MM3Z12 MM3Z13 MM3Z15 MM3Z16 MM3Z18 MM3Z20 MM3Z22 MM3Z24 MM3Z27 MM3Z30 MM3Z33 MM3Z36 MM3Z39 MM3Z43 MM3Z47 MM3Z51 MM3Z56 MM3Z62 MM3Z68 MM3Z75 MM3Z82 MM3Z91 MM3Z100 MM3Z110 MM3Z120 Marking Code B0 C0 1C 1D 1E 1F 1H 1J 1K 1M 1N 1P 1R 1X 1Y 1Z 2A 2B 2C 2D 2E 2F 2H 2J 2K 2M 2N 2P 2R 2X 2Y 2Z 3A 3B 3C 3D 3E 3F 3H 3J 3K 3M 3N 3P Zener Voltage range 1) VZNOM V 2.0 2.2 2.4 2.7 3.0 3.3 3.6 3.9 4.3 4.7 5.1 5.6 6.2 6.8 7.5 8.2 9.1 10 11 12 13 15 16 18 20 22 24 27 30 33 36 39 43 47 51 56 62 68 75 82 91 100 110 120 IZT for VZT mA V 5 1.80...2.15 5 2.08...2.33 5 2.28...2.56 5 2.5...2.9 5 2.8...3.2 5 3.1...3.5 5 3.4...3.8 5 3.7...4.1 5 4...4.6 5 4.4...5 5 4.8...5.4 5 5.2...6 5 5.8...6.6 5 6.4...7.2 5 7...7.9 5 7.7...8.7 5 8.5...9.6 5 9.4...10.6 5 10.4...11.6 5 11.4...12.7 5 12.4...14.1 5 13.8...15.6 5 15.3...17.1 5 16.8...19.1 5 18.8...21.2 5 20.8...23.3 5 22.8...25.6 5 25.1...28.9 5 28...32 5 31...35 5 34...38 2.5 37...41 2.5 40...46 2.5 44...50 2.5 48...54 2.5 52...60 2.5 58...66 2.5 64...72 2.5 70...79 2.5 77...87 1 85...96 1 94...106 1 104...116 1 114...127 1)VZ is teated with pulses tp=20ms. 2)ZZ is measured at IZ by given a very small A.C. current signal. Dynamic resistance2) rZjt and rZjK at IZK mA 100 5 100 5 100 5 110 5 120 5 130 5 130 5 130 5 130 5 130 5 130 5 80 5 50 5 30 5 30 5 30 5 30 5 30 5 30 5 35 5 35 5 40 5 40 5 45 5 50 5 55 5 60 5 70 2 80 2 80 2 90 2 100 2 130 2 150 2 180 2 180 2 200 2 250 2 300 2 300 2 700 1 700 1 800 1 900 1 Reverse leakage current IR and IR at VR AV 120 0.5 120 0.7 120 1 120 1 50 1 20 1 10 1 51 51 21 2 1.5 1 2.5 13 0.5 3.5 0.5 4 0.5 5 0.5 6 0.1 7 0.1 8 0.1 9 0.1 10 0.1 11 0.1 12 0.1 13 0.1 15 0.1 17 0.1 19 0.1 21 0.1 23 0.1 25 0.1 27 2 30 2 33 2 36 1 39 1 43 0.2 47 0.2 52 0.2 57 0.2 63 0.2 69 0.2 76 0.2 84 0.2 91 4 Temp Coefficient of zener voltage TKVZ %/K -0.09...-0.06 -0.09...-0.06 -0.09...-0.06 -0.09...-0.06 -0.08...-0.05 -0.08...-0.05 -0.08...-0.05 -0.08...-0.05 -0.06...-0.03 -0.05...+0.02 -0.02...+0.02 -0.05...+0.05 0.03...0.06 0.03...0.07 0.03...0.07 0.03...0.08 0.03...0.09 0.03...0.1 0.03...0.11 0.03...0.11 0.03...0.11 0.03...0.11 0.03...0.11 0.03...0.11 0.03...0.11 0.04...0.12 0.04...0.12 0.04...0.12 0.04...0.12 0.04...0.12 0.04...0.12 0.04...0.12 0.04...0.12 0.04...0.12 0.04...0.12 0.04...0.12 0.04...0.12 0.04...0.12 0.04...0.12 0.05...0.12 0.05...0.12 0.05...0.12 0.05...0.12 0.05...0.12 JINAN JINGHENG ELECTRONICS CO., LTD. 10-52 HTTP://WWW.JINGHENGGROUP.COM MM3Z... SILICON PLANAR ZENER DIODES BREAKDOWN CHARACTERISTICS AT TJ= CONSTANT (PULSED) mA 50 TJ=25 C 40 IZ 30 2V7 3V9 5V6 3V3 4V7 6V8 8V2 20 Test current IZ 10 5mA 0 0 1 2 3 4 5 6 7 8 9 10 V VZ BREAKDOWN CHARACTERISTICS AT TJ= CONSTANT (PULSED) mA 30 TJ=25 C 10 IZ 20 10 Test current IZ 5mA 12 15 18 22 27 33 0 0 10 20 30 40 V VZ JINAN JINGHENG ELECTRONICS CO., LTD. 10-53 HTTP://WWW.JINGHENGGROUP.COM .


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