Document
Ordering number:ENN6401
N-Channel Silicon MOSFET
FSS238
Load Switching Applications
Features
· Low ON resistance. · 4V drive.
Package Dimensions
unit:mm 2116
[FSS238]
8 5
0.3 4.4 6.0
5.0
1.5
Specifications
Absolute Maximum Ratings at Ta = 25˚C
Parameter Drain-to-Source Voltage Gate-to-Source Voltage Drain Current (DC) Drain Current (pulse) Allowable Power Dissipation Channel Temperature Storage Temperature Symbol VDSS VGSS ID IDP PD Tch Tstg
0.595
1.27
0.43
0.1
1.8max
1
4
0.2
1 : Source 2 : Source 3 : Source 4 : Gate 5 : Drain 6 : Drain 7 : Drain 8 : Drain SANYO : SOP8
Conditions
Ratings 30 ±20 14
Unit V V A A W ˚C ˚C
PW≤10µs, duty cycle≤1% Mounted on a ceramic board (1200mm2×0.8mm)
56 2.0 150 –55 to +150
Electrical Characteristics at Ta = 25˚C
Parameter Drain-to-Source Breakdown Voltage Zero-Gate Voltage Drain Current Gate-to-Source Leakage Current Cutoff Voltage Forward Transfer Admittance Static Drain-to-Source On-State Resistance Input Capacitance Output Capacitance Reverse Transfer Capacitance Symbol V(BR)DSS IDSS IGSS VGS(off) | yfs | RDS(on)1 RDS(on)2 Ciss Coss Crss ID=1mA, VGS=0 VDS=30V, VGS=0 VGS=±16V, VDS=0 VDS=10V, ID=1mA VDS=10V, ID=14A ID=14A, VGS=10V ID=7A, VGS=4V VDS=10V, f=1MHz VDS=10V, f=1MHz VDS=10V, f=1MHz Conditions Ratings min 30 1 ±10 1.0 21 30 7 10 3700 830 500 9 14 2.4 typ max Unit V µA µA V S mΩ mΩ pF pF pF
Marking : S238
Continued on next page.
Any and all SANYO products described or contained herein do not have specifications that can handle applications that require extremely high levels of reliability, such as life-support systems, aircraft’s control systems, or other applications whose failure can be reasonably expected to result in serious physical and/or material damage. Consult with your SANYO representative nearest you before using any SANYO products described or contained herein in such applications. SANYO assumes no responsibility for equipment failures that result from using products at values that exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges,or other parameters) listed in products specifications of any and all SANYO products described or contained herein.
SANYO Electric Co.,Ltd. Semiconductor Company
TOKYO OFFICE Tokyo Bldg., 1-10, 1 Chome, Ueno, Taito-ku, TOKYO, 110-8534 JAPAN
30300TS (KOTO) TA-2524 No.6401-1/4
FSS238
Continued from preceding page.
Parameter Turn-ON Delay Time Rise Time Turn-OFF Delay Time Fall Time Total Gate Charge Gate-to-Source Charge Gate-to-Drain "Miller" Charge Diode Forward Voltage Symbol td(on) tr td(off) tf Qg Qgs Qgd VSD Conditions See specified Test Circuit See specified Test Circuit See specified Test Circuit See specified Test Circuit VDS=10V, VGS=10V, ID=14A VDS=10V, VGS=10V, ID=14A VDS=10V, VGS=10V, ID=14A IS=14A, VGS=0 Ratings min typ 20 370 280 240 110 16 20 0.78 1.2 max Unit ns ns ns ns nC nC nC V
Switching Time Test Circuit
VDD=15V 10V 0V VIN ID=14A RL=1.07Ω VIN
D
PW=10µs D.C.≤1%
VOUT
G
P.G
50.