Document
MMBTA13L, SMMBTA13L, MMBTA14L, SMMBTA14L
Darlington Amplifier Transistors
NPN Silicon
Features
• S Prefix for Automotive and Other Applications Requiring Unique
Site and Control Change Requirements; AEC−Q101 Qualified and PPAP Capable
• These Devices are Pb−Free, Halogen Free/BFR Free and are RoHS
Compliant*
MAXIMUM RATINGS
Rating
Symbol Value
Unit
Collector −Emitter Voltage Collector −Base Voltage Emitter −Base Voltage Collector Current − Continuous THERMAL CHARACTERISTICS
VCES VCBO VEBO
IC
30 Vdc 30 Vdc 10 Vdc 300 mAdc
Characteristic
Symbol
Max
Unit
Total Device Dissipation FR− 5 Board (Note 1) TA = 25°C Derate above 25°C
PD 225 mW 1.8 mW/°C
Thermal Resistance, Junction−to−Ambient Total Device Dissipation Alumina
Substrate, (Note 2) TA = 25°C Derate above 25°C
RqJA PD
556 °C/W 300 mW 2.4 mW/°C
Thermal Resistance, Junction−to−Ambient RqJA
417 °C/W
Junction and Storage Temperature
TJ, Tstg −55 to +150 °C
Stresses exceeding Maximum Ratings may damage the device. Maximum Ratings are stress ratings only. Functional operation above the Recommended Operating Conditions is not implied. Extended exposure to stresses above the Recommended Operating Conditions may affect device reliability. 1. FR−5 = 1.0 0.75 0.062 in. 2. Alumina = 0.4 0.3 0.024 in. 99.5% alumina.
*For additional information on our Pb−Free strategy and soldering details, please download the ON Semiconductor Soldering and Mounting Techniques Reference Manual, SOLDERRM/D.
© Semiconductor Components Industries, LLC, 2012
November, 2012 − Rev. 5
1
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SOT−23 (TO−236) CASE 318 STYLE 6
COLLECTOR 3
BASE 1
EMITTER 2 MARKING DIAGRAM
1x M G G
1
1x = Device Code x = M for MMBTA13LT1G, SMMBTA13LT1G x = N for MMBTA14LT1G, SMMBTA14LT1G, T3G
M = Date Code* G = Pb−Free Package
(Note: Microdot may be in either location)
*Date Code orientation and/or overbar may vary depending upon manufacturing location.
ORDERING INFORMATION
Device
Package
Shipping†
MMBTA13LT1G, SOT−23 3,000 / Tape & Reel SMMBTA13LT1G (Pb−Free)
MMBTA14LT1G, SOT−23 3,000 / Tape & Reel SMMBTA14LT1G (Pb−Free)
SMMBTA14LT3G SOT−23 (Pb−Free)
10,000 / Tape & Reel
†For information on tape and reel specifications, including part orientation and tape sizes, please refer to our Tape and Reel Packaging Specifications Brochure, BRD8011/D. Publication Order Number: MMBTA13LT1/D
MMBTA13L, SMMBTA13L, MMBTA14L, SMMBTA14L
ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted) Characteristic
OFF CHARACTERISTICS Collector −Emitter Breakdown Voltage
(IC = 100 mAdc, VBE = 0) Collector Cutoff Current
(VCB = 30 Vdc, IE = 0) Emitter Cutoff Current
(VEB = 10 Vdc, IC = 0) ON CHARACTERISTICS (Note 3) DC Current Gain
(IC = 10 mAdc, VCE = 5.0 Vdc) MMBTA13, SMMBTA13 MMBTA14, SMMBTA14
(ICM=M1B0T0Am13A,dSc,MVMCBET=A51.30 Vdc) MMBTA14, SMMBTA14
Collector −Emitter Saturation Voltage (IC = 100 mAdc, IB = 0.1 mAdc)
Base −Emitter On Voltage (IC = 100 mAdc, VCE = 5.0 Vdc)
SMALL−SIGNAL CHARACTERISTICS Current −Gain − Bandwidth Product (Note 4)
(IC = 10 mAdc, VCE = 5.0 Vdc, f = 100 MHz) 3. Pulse Test: Pulse Width v 300 ms, Duty Cycle v 2.0%. 4. fT = |hfe| • ftest.
Symbol
Min
V(BR)CES ICBO IEBO
30 − −
hFE
VCE(sat) VBE
5000 10,000 10,000 20,000
− −
fT 125
Max
− 100 100
− − − − 1.5 2.0
−
Unit Vdc nAdc nAdc
−
Vdc Vdc MHz
RS in
en
IDEAL TRANSISTOR
Figure 1. Transistor Noise Model
http://onsemi.com 2
en, NOISE VOLTAGE (nV)
MMBTA13L, SMMBTA13L, MMBTA14L, SMMBTA14L
500
200 100 50
20 10 5.0
10 20
NOISE CHARACTERISTICS (VCE = 5.0 Vdc, TA = 25°C)
in, NOISE CURRENT (pA)
BANDWIDTH = 1.0 Hz RS ≈ 0
10 mA
2.0
1.0 0.7 0.5
0.3 0.2
BANDWIDTH = 1.0 Hz IC = 1.0 mA
100 mA IC = 1.0 mA
0.1 0.07 0.05
0.03
0.02
50 100 200 500 1 k 2 k 5 k 10 k 20 k 50 k 100 k
10 20
f, FREQUENCY (Hz)
Figure 2. Noise Voltage
100 mA 10 mA
50 100 200 500 1 k 2 k 5 k 10 k 20 k 50 k 100 k f, FREQUENCY (Hz)
Figure 3. Noise Current
200
100 BANDWIDTH = 10 Hz TO 15.7 kHz 70 IC = 10 mA 50
30 100 mA 20
1.0 mA
NF, NOISE FIGURE (dB)
14 12 10 8.0 6.0 4.0 IC = 1.0 mA 2.0
BANDWIDTH = 10 Hz TO 15.7 kHz
10 mA 100 mA
10 1.0
2.0 5.0 10 20 50 100 200 500 RS, SOURCE RESISTANCE (kW)
Figure 4. Total Wideband Noise Voltage
1000
0 1.0 2.0
5.0 10 20
50 100 200
RS, SOURCE RESISTANCE (kW)
500 1000
Figure 5. Wideband Noise Figure
VT, TOTAL WIDEBAND NOISE VOLTAGE (nV)
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C, CAPACITANCE (pF)
hFE, DC CURRENT GAIN
|hfe|, SMALL-SIGNAL CURRENT GAIN
MMBTA13L, SMMBTA13L, MMBTA14L, SMMBTA14L
SMALL−SIGNAL CHARACTERISTICS
20 4.0
VCE = 5.0 V
10
TJ = 25°C
f = 100 MHz 2.0 TJ = 25°C
7.0 Cibo 1.0 5.0 Cobo 0.8
0.6
3.0 0.4
2.0 0.04
0.1 0.2 0.4 1.0 2.0 4.0 10 20 40 VR, REVERSE VOLTAGE (VOLTS) Figure 6. Capacitance
0.2 0.5
1.0 2.0 0.5 10 20 50 100 200 IC, COLLECTOR CURRENT (mA)
Figure 7. High Frequency Current Gain
500
VCE, COLLECTOR-EMITTER VOLTAGE (VOLTS)
200 k
100 k 70 k 50 k
TJ = 125°C 25°C
30 k 20 k
10 k 7.0 k - 55°C 5.0 k
3.0 k
VCE = 5.0 V
2.0 k 5.0 7.0 10
20 30 50 70 100 20.