SMMBT5401LT1G

MMBT5401L, SMMBT5401L, NSVMMBT5401L High Voltage Transistor PNP Silicon Features S and NSV Prefix for Automotive and Other Applications Requiring Unique Site and Control Change Requirements; AEC−Q101 Qualified and PPAP Capable These Devices are Pb−Free, Halogen Free/BFR Free and are RoHS Compliant MAXIMUM RATINGS Rating Symbol Value Unit Collector −Emitter Voltage VCEO −150 Vdc Collector −Base Voltage VCBO −160 Vdc Emitter −Base Voltage VEBO −5.0 Vdc Collector Current − Continuous IC −500 mAdc Stresses exceeding those listed in the Maximum Ratings table may damage the device. If any of these limits are exceeded, device functionality should not be assumed, damage may occur and reliability may be affected. THERMAL CHARACTERISTICS Characteristic Symbol Max Unit Total Device Dissipation FR− 5 Board (Note 1) TA = 25°C Derate Above 25°C PD 225 mW 1.8 mW/°C Thermal Resistance, Junction−to−Ambient RqJA 556 °C/W Total Device Dissipation Alumina Substrate (Note 2) TA = 25°C Derate Above 25°C PD 300 mW 2.4 mW/°C Thermal Resistance, Junction−to−Ambient RqJA 417 °C/W Junction and Storage Temperature TJ, Tstg 1. FR− 5 = 1.0  0.75  0.062 in. 2. Alumina = 0.4  0.3  0.024 in 99.5% alumina. −55 to +150 °C http://onsemi.com SOT−23 (TO−236) CASE 318 STYLE 6 COLLECTOR 3 1 BASE 2 EMITTER MARKING DIAGRAM 2L M G G 1 2L = Specific Device Code M = Date Code* G = Pb−Free Package (Note: Microdot may be in either location) *Date Code orientation and/...