Document
VDS
VGS
RDS(on) max
(@VGS = 4.5V)
RDS(on) max
(@VGS = 2.5V)
Qg (typical) ID
(@TA = 25°C)
30 ±12 17.5
22.0 11 8.3
V V mΩ
mΩ nC A
PD - 97730
IRLTS6342PbF
HEXFET® Power MOSFET
D1 D2 G3
6D 5D 4S
TSOP-6
Applications • System/Load Switch
Features and Benefits
Features Industry-Standard TSOP-6 Package RoHS Compliant Containing no Lead, no Bromide and no Halogen MSL1, Consumer Qualification
Resulting Benefits Multi-Vendor Compatibility
⇒ Environmentally Friendlier
Increased Reliability
Orderable part number IRLTS6342TRPBF
Package Type TSOP-6
Standard Pack
Form
Quantity
Tape and Reel
3000
Note
Absolute Maximum Ratings
Parameter
VDS Drain-to-Source Voltage
VGS Gate-to-Source Voltage
ID @ TA = 25°C
Continuous Drain Current, VGS @ 4.5V
ID @ TA = 70°C IDM PD @TA = 25°C PD @TA = 70°C
Continuous Drain Current, VGS @ 4.5V
cPulsed Drain Current ePower Dissipation ePower Dissipation
Linear Derating Factor
TJ Operating Junction and
TSTG
Storage Temperature Range
Max. 30 ±12
8.3
6.7
64
2.0
1.3 0.02 -55 to + 150
Units V
A
W W/°C
°C
Notes through are on page 2 www.irf.com
1
9/27/11
IRLTS6342PbF
Static @ TJ = 25°C (unless otherwise specified)
Parameter
Min.
BVDSS ΔΒVDSS/ΔTJ RDS(on)
Drain-to-Source Breakdown Voltage Breakdown Voltage Temp. Coefficient
Static Drain-to-Source On-Resistance
30 ––– ––– –––
VGS(th) ΔVGS(th) IDSS
Gate Threshold Voltage Gate Threshold Voltage Coefficient Drain-to-Source Leakage Current
0.5 ––– ––– –––
IGSS Gate-to-Source Forward Leakage
–––
Gate-to-Source Reverse Leakage
–––
gfs Forward Transconductance
25
Qg Total Gate Charge
Qgs Gate-to-Source Charge
Qgd Gate-to-Drain Charge
RG Gate Resistance
td(on)
Turn-On Delay Time
tr Rise Time
td(off)
Turn-Off Delay Time
tf Fall Time
Ciss Input Capacitance
Coss Output Capacitance
Crss Reverse Transfer Capacitance
Diode Characteristics
––– ––– ––– ––– ––– ––– ––– ––– ––– ––– –––
Parameter
Min.
IS Continuous Source Current (Body Diode)
–––
ÃISM Pulsed Source Current (Body Diode)
–––
VSD Diode Forward Voltage
–––
trr Reverse Recovery Time
Qrr Reverse Recovery Charge
Thermal Resistance
––– –––
Parameter
eRθJA Junction-to-Ambient
Typ. ––– 23 14.0 17.5 ––– -4.3 ––– ––– ––– ––– ––– 11 0.5 4.6 2.2 5.4 11 32 15 1010 96 70
Typ.
–––
–––
––– 13 5.8
Max. ––– ––– 17.5 22.0 1.1 ––– 1.0 150 100 -100 ––– ––– ––– ––– ––– ––– ––– ––– ––– ––– ––– –––
Units
Conditions
V VGS = 0V, ID = 250μA
mV/°C Reference to 25°C, ID = 1mA
ddmΩ
VGS = 4.5V, ID = 8.3A VGS = 2.5V, ID = 6.7A
V VDS = VGS, ID = 10μA
mV/°C
μA
VDS = 24V, VGS = 0V VDS = 24V, VGS = 0V, TJ = 125°C
nA
VGS = 12V VGS = -12V
S VDS = 10V, ID = 6.4A
VGS = 4.5V
nC VDS = 15V
ID = 6.4A
eÃΩ VDD = 15V, VGS = 4.5V
ns
ID = 6.4A RG = 6.8Ω
See Figs. 18
VGS = 0V pF VDS = 25V
ƒ = 1.0MHz
Max. 2.0
64
1.2 20 8.7
Units
Conditions
MOSFET symbol
D
A
showing the integral reverse
G
p-n junction diode.
S
dV TJ = 25°C, IS = 8.3A, VGS = 0V
dns TJ = 25°C, IF = 6.4A, VDD = 24V
nC di/dt.