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IRLTS6342TRPBF Dataheets PDF



Part Number IRLTS6342TRPBF
Manufacturers International Rectifier
Logo International Rectifier
Description HEXFET Power MOSFET
Datasheet IRLTS6342TRPBF DatasheetIRLTS6342TRPBF Datasheet (PDF)

VDS VGS RDS(on) max (@VGS = 4.5V) RDS(on) max (@VGS = 2.5V) Qg (typical) ID (@TA = 25°C) 30 ±12 17.5 22.0 11 8.3 V V mΩ mΩ nC A PD - 97730 IRLTS6342PbF HEXFET® Power MOSFET D1 D2 G3 6D 5D 4S TSOP-6 Applications • System/Load Switch Features and Benefits Features Industry-Standard TSOP-6 Package RoHS Compliant Containing no Lead, no Bromide and no Halogen MSL1, Consumer Qualification Resulting Benefits Multi-Vendor Compatibility ⇒ Environmentally Friendlier Increased Reliability Orderabl.

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VDS VGS RDS(on) max (@VGS = 4.5V) RDS(on) max (@VGS = 2.5V) Qg (typical) ID (@TA = 25°C) 30 ±12 17.5 22.0 11 8.3 V V mΩ mΩ nC A PD - 97730 IRLTS6342PbF HEXFET® Power MOSFET D1 D2 G3 6D 5D 4S TSOP-6 Applications • System/Load Switch Features and Benefits Features Industry-Standard TSOP-6 Package RoHS Compliant Containing no Lead, no Bromide and no Halogen MSL1, Consumer Qualification Resulting Benefits Multi-Vendor Compatibility ⇒ Environmentally Friendlier Increased Reliability Orderable part number IRLTS6342TRPBF Package Type TSOP-6 Standard Pack Form Quantity Tape and Reel 3000 Note Absolute Maximum Ratings Parameter VDS Drain-to-Source Voltage VGS Gate-to-Source Voltage ID @ TA = 25°C Continuous Drain Current, VGS @ 4.5V ID @ TA = 70°C IDM PD @TA = 25°C PD @TA = 70°C Continuous Drain Current, VGS @ 4.5V cPulsed Drain Current ePower Dissipation ePower Dissipation Linear Derating Factor TJ Operating Junction and TSTG Storage Temperature Range Max. 30 ±12 8.3 6.7 64 2.0 1.3 0.02 -55 to + 150 Units V A W W/°C °C Notes  through „ are on page 2 www.irf.com 1 9/27/11 IRLTS6342PbF Static @ TJ = 25°C (unless otherwise specified) Parameter Min. BVDSS ΔΒVDSS/ΔTJ RDS(on) Drain-to-Source Breakdown Voltage Breakdown Voltage Temp. Coefficient Static Drain-to-Source On-Resistance 30 ––– ––– ––– VGS(th) ΔVGS(th) IDSS Gate Threshold Voltage Gate Threshold Voltage Coefficient Drain-to-Source Leakage Current 0.5 ––– ––– ––– IGSS Gate-to-Source Forward Leakage ––– Gate-to-Source Reverse Leakage ––– gfs Forward Transconductance 25 Qg Total Gate Charge Qgs Gate-to-Source Charge Qgd Gate-to-Drain Charge RG Gate Resistance td(on) Turn-On Delay Time tr Rise Time td(off) Turn-Off Delay Time tf Fall Time Ciss Input Capacitance Coss Output Capacitance Crss Reverse Transfer Capacitance Diode Characteristics ––– ––– ––– ––– ––– ––– ––– ––– ––– ––– ––– Parameter Min. IS Continuous Source Current (Body Diode) ––– ÙISM Pulsed Source Current (Body Diode) ––– VSD Diode Forward Voltage ––– trr Reverse Recovery Time Qrr Reverse Recovery Charge Thermal Resistance ––– ––– Parameter eRθJA Junction-to-Ambient Typ. ––– 23 14.0 17.5 ––– -4.3 ––– ––– ––– ––– ––– 11 0.5 4.6 2.2 5.4 11 32 15 1010 96 70 Typ. ––– ––– ––– 13 5.8 Max. ––– ––– 17.5 22.0 1.1 ––– 1.0 150 100 -100 ––– ––– ––– ––– ––– ––– ––– ––– ––– ––– ––– ––– Units Conditions V VGS = 0V, ID = 250μA mV/°C Reference to 25°C, ID = 1mA ddmΩ VGS = 4.5V, ID = 8.3A VGS = 2.5V, ID = 6.7A V VDS = VGS, ID = 10μA mV/°C μA VDS = 24V, VGS = 0V VDS = 24V, VGS = 0V, TJ = 125°C nA VGS = 12V VGS = -12V S VDS = 10V, ID = 6.4A VGS = 4.5V nC VDS = 15V ID = 6.4A eÃΩ VDD = 15V, VGS = 4.5V ns ID = 6.4A RG = 6.8Ω See Figs. 18 VGS = 0V pF VDS = 25V ƒ = 1.0MHz Max. 2.0 64 1.2 20 8.7 Units Conditions MOSFET symbol D A showing the integral reverse G p-n junction diode. S dV TJ = 25°C, IS = 8.3A, VGS = 0V dns TJ = 25°C, IF = 6.4A, VDD = 24V nC di/dt.


IRLTS6342PbF IRLTS6342TRPBF LA7031


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