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FDP5N50NZ / FDPF5N50NZ — N-Channel UniFETTM II MOSFET
FDP5N50NZ / FDPF5N50NZ
N-Channel UniFETTM II MOSFET
500 V, 4.5 A, 1.5 Ω
Features
• R DS(on) = 1.38 Ω (Typ.) @ VGS = 10 V, ID = 2.25 A • Low Gate Charge (Typ. 9 nC) • Low CRSS (Typ. 4 pF) • 100% Avalanche Tested • Improved dv/dt Capability • ESD Improved Capability • RoHS Compliant
Applications
• LCD/ LED TV • Lighting • Uninterruptible Power Supply • AC-DC Power Supply
December 2013
Description
UniFETTM II MOSFET is Fairchild Semiconductor’s high voltage MOSFET family based on advanced planar stripe and DMOS technology. This advanced MOSFET family has the smallest on-state resistance among the planar MOSFET, and also provides superior switching performance and higher avalanche energy strength. In addition, internal gate-source ESD diode allows UniFET II MOSFET to withstand over 2kV HBM surge stress. This device family is suitable for switching power converter applications such as power factor correction (PFC), flat panel display (FPD) TV power, ATX and electronic lamp ballasts.
D
GDS
TO-220
G
GDS TO-220F
MOSFET Maximum Ratings TC = 25oC unless otherwise noted.
Symbol
Parameter
VDSS VGSS
ID
IDM EAS IAR EAR dv/dt
PD
Drain to Source Voltage
Gate to Source Voltage Drain Current Drain Current
- Continuous (TC = 25oC) - Continuous (TC = 100oC)
- Pulsed
Single Pulsed Avalanche Energy
Avalanche Current
Repetitive Avalanche Energy
Peak Diode Recovery dv/dt Power Dissipation
(TC = 25oC) - Derate above 25oC
TJ, TSTG TL
Operating and Storage Temperature Range
Maximum Lead Temperature for Soldering , 1/8” from Case for 5 Seconds.
*Drain current limited by maximum junction temperature
Thermal Characteristics
Symbol RθJC RθJA
Parameter Thermal Resistance, Junction to Case, Max. Thermal Resistance, Junction to Ambient, Max.
©2010 Fairchild Semiconductor Corporation FDP5N50NZ / FDPF5N50NZ Rev. C1
1
S
FDP5N50NZ FDPF5N50NZ
500
±25
4.5 4.5*
2.7 2.7*
(Note 1)
18
18*
(Note 2)
160
(Note 1)
4.5
(Note 1)
7.8
(Note 3)
10
78 30
0.62 0.24
-55 to +150
300
Unit V V
A
A mJ A mJ V/ns W W/oC oC
oC
FDP5N50NZ 1.6 62.5
FDPF5N50NZ 4.1 62.5
Unit oC/W
www.fairchildsemi.com
FDP5N50NZ / FDPF5N50NZ — N-Channel UniFETTM II MOSFET
Package Marking and Ordering Information
Part Number FDP5N50NZ FDPF5N50NZ
Top Mark FDP5N50NZ FDPF5N50NZ
Package TO-220 TO-220F
Packing Method Tube Tube
Reel Size N/A N/A
Tape Width N/A N/A
Quantity 50 units 50 units
Electrical Characteristics TC = 25oC unless otherwise noted.
Symbol
Parameter
Test Conditions
Min.
Off Characteristics
BVDSS
BVDSS / ∆TJ
Drain to Source Breakdown Voltage
Breakdown Voltage Temperature Coefficient
IDSS Zero Gate Voltage Drain Current
IGSS
Gate to Body Leakage Current
ID = 250 µA, VGS = 0 V, TC = 25oC
ID = 250 µA, Referenced to 25oC
VDS = 500 V, VGS = 0 V VDS = 400 V, VGS = 0 V,TC = 125oC VGS = ±25 V, VDS = 0 V
500
-
-
On Characteristics
VGS(th) RDS(on) gFS
Gate Threshold Voltage Static Drain to Source On Resistance Forward Transconductance
VGS = VDS, ID = 250 µA VGS = 10 V, ID = 2.25 A VDS = 20 V, ID = 2.25 A
3.0 - -
Dynamic Characteristics
Ciss Coss Crss Qg(tot) Qgs
Qgd
Input Capacitance Output Capacitance Reverse Transfer Capacitance Total Gate Charge at 10V Gate to Source Gate Charge
Gate to Drain “Miller” Charge
VDS = 25 V, VGS = 0 V f = 1 MHz
VDS = 400 V ID = 4.5 A VGS = 10 V
(Note 4)
-
-
Typ.
0.5
-
1.38 3.54
330 50 4 9 2 4
Max. Unit
-V -o 1
A 10 ±10 A
5.0 V 1.5
-S
440 pF 70 pF 8 pF 12 nC - nC - nC
Switching Characteristics
td(on) tr td(off) tf
Turn-On Delay Time Turn-On Rise Time Turn-Off Delay Time Turn-Off Fall Time
VDD = 250 V, ID = 4.5 A VGS = 10 V, RGEN = 25 Ω
Drain-Source Diode Characteristics
IS Maximum Continuous Drain to Source Diode Forward Current
ISM Maximum Pulsed Drain to Source Diode Forward Current
VSD
Drain to Source Diode Forward Voltage
VGS = 0 V, ISD = 4.5 A
trr Reverse Recovery Time Qrr Reverse Recovery Charge
VGS = 0 V, ISD = 4.5 A dIF/dt = 100 A/µs
Notes:
1: Repetitive rating: pulse-width limited by maximum junction temperature. 2: L = 15.8 mH, IAS = 4.5 A, VDD = 50 V, RG = 25 Ω, starting TJ = 25°C. 3: ISD ≤ 2.8 A, di/dt ≤ 200 A/µs , VDD ≤ BVDSS, starting TJ = 25°C.
4: Essentially independent of operating temperature typical characteristics.
(Note 4)
-
-
12 35 ns 22 55 ns 28 65 ns 21 50 ns
- 4.5 A - 18 A - 1.4 V 210 - ns 1.1 - C
©2010 Fairchild Semiconductor Corporation FDP5N50NZ / FDPF5N50NZ Rev. C1
2
www.fairchildsemi.com
FDP5N50NZ / FDPF5N50NZ — N-Channel UniFETTM II MOSFET
Typical Performance Characteristics
Figure 1. On-Region Characteristics
10 VGS = 15.0 V 10.0 V 8.0 V 7.0 V 6.5 V 6.0 V 5.5 V
1
ID, Drain Current[A]
0.1 0.1
*Notes: 1. 250s Pulse Test 2. TC = 25oC
1 10 20 VDS, Drain-Source Voltage[V]
Figure 3. On-Resistance Variation vs. Drain Current and Gate Voltage
4
RDS(ON) [], Drain-Source On-Resistance
3
VGS = 10V 2
VGS = 20V
1 *Notes: TC = 25oC 0 2 4 6 8 10
ID, Drain Current [A.