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FDPF5N50NZ Dataheets PDF



Part Number FDPF5N50NZ
Manufacturers Fairchild Semiconductor
Logo Fairchild Semiconductor
Description N-Channel MOSFET
Datasheet FDPF5N50NZ DatasheetFDPF5N50NZ Datasheet (PDF)

FDP5N50NZ / FDPF5N50NZ — N-Channel UniFETTM II MOSFET FDP5N50NZ / FDPF5N50NZ N-Channel UniFETTM II MOSFET 500 V, 4.5 A, 1.5 Ω Features • R DS(on) = 1.38 Ω (Typ.) @ VGS = 10 V, ID = 2.25 A • Low Gate Charge (Typ. 9 nC) • Low CRSS (Typ. 4 pF) • 100% Avalanche Tested • Improved dv/dt Capability • ESD Improved Capability • RoHS Compliant Applications • LCD/ LED TV • Lighting • Uninterruptible Power Supply • AC-DC Power Supply December 2013 Description UniFETTM II MOSFET is Fairchild Semiconductor’.

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FDP5N50NZ / FDPF5N50NZ — N-Channel UniFETTM II MOSFET FDP5N50NZ / FDPF5N50NZ N-Channel UniFETTM II MOSFET 500 V, 4.5 A, 1.5 Ω Features • R DS(on) = 1.38 Ω (Typ.) @ VGS = 10 V, ID = 2.25 A • Low Gate Charge (Typ. 9 nC) • Low CRSS (Typ. 4 pF) • 100% Avalanche Tested • Improved dv/dt Capability • ESD Improved Capability • RoHS Compliant Applications • LCD/ LED TV • Lighting • Uninterruptible Power Supply • AC-DC Power Supply December 2013 Description UniFETTM II MOSFET is Fairchild Semiconductor’s high voltage MOSFET family based on advanced planar stripe and DMOS technology. This advanced MOSFET family has the smallest on-state resistance among the planar MOSFET, and also provides superior switching performance and higher avalanche energy strength. In addition, internal gate-source ESD diode allows UniFET II MOSFET to withstand over 2kV HBM surge stress. This device family is suitable for switching power converter applications such as power factor correction (PFC), flat panel display (FPD) TV power, ATX and electronic lamp ballasts. D GDS TO-220 G GDS TO-220F MOSFET Maximum Ratings TC = 25oC unless otherwise noted. Symbol Parameter VDSS VGSS ID IDM EAS IAR EAR dv/dt PD Drain to Source Voltage Gate to Source Voltage Drain Current Drain Current - Continuous (TC = 25oC) - Continuous (TC = 100oC) - Pulsed Single Pulsed Avalanche Energy Avalanche Current Repetitive Avalanche Energy Peak Diode Recovery dv/dt Power Dissipation (TC = 25oC) - Derate above 25oC TJ, TSTG TL Operating and Storage Temperature Range Maximum Lead Temperature for Soldering , 1/8” from Case for 5 Seconds. *Drain current limited by maximum junction temperature Thermal Characteristics Symbol RθJC RθJA Parameter Thermal Resistance, Junction to Case, Max. Thermal Resistance, Junction to Ambient, Max. ©2010 Fairchild Semiconductor Corporation FDP5N50NZ / FDPF5N50NZ Rev. C1 1 S FDP5N50NZ FDPF5N50NZ 500 ±25 4.5 4.5* 2.7 2.7* (Note 1) 18 18* (Note 2) 160 (Note 1) 4.5 (Note 1) 7.8 (Note 3) 10 78 30 0.62 0.24 -55 to +150 300 Unit V V A A mJ A mJ V/ns W W/oC oC oC FDP5N50NZ 1.6 62.5 FDPF5N50NZ 4.1 62.5 Unit oC/W www.fairchildsemi.com FDP5N50NZ / FDPF5N50NZ — N-Channel UniFETTM II MOSFET Package Marking and Ordering Information Part Number FDP5N50NZ FDPF5N50NZ Top Mark FDP5N50NZ FDPF5N50NZ Package TO-220 TO-220F Packing Method Tube Tube Reel Size N/A N/A Tape Width N/A N/A Quantity 50 units 50 units Electrical Characteristics TC = 25oC unless otherwise noted. Symbol Parameter Test Conditions Min. Off Characteristics BVDSS BVDSS / ∆TJ Drain to Source Breakdown Voltage Breakdown Voltage Temperature Coefficient IDSS Zero Gate Voltage Drain Current IGSS Gate to Body Leakage Current ID = 250 µA, VGS = 0 V, TC = 25oC ID = 250 µA, Referenced to 25oC VDS = 500 V, VGS = 0 V VDS = 400 V, VGS = 0 V,TC = 125oC VGS = ±25 V, VDS = 0 V 500 - - On Characteristics VGS(th) RDS(on) gFS Gate Threshold Voltage Static Drain to Source On Resistance Forward Transconductance VGS = VDS, ID = 250 µA VGS = 10 V, ID = 2.25 A VDS = 20 V, ID = 2.25 A 3.0 - - Dynamic Characteristics Ciss Coss Crss Qg(tot) Qgs Qgd Input Capacitance Output Capacitance Reverse Transfer Capacitance Total Gate Charge at 10V Gate to Source Gate Charge Gate to Drain “Miller” Charge VDS = 25 V, VGS = 0 V f = 1 MHz VDS = 400 V ID = 4.5 A VGS = 10 V (Note 4) - - Typ. 0.5 - 1.38 3.54 330 50 4 9 2 4 Max. Unit -V -o 1 A 10 ±10 A 5.0 V 1.5  -S 440 pF 70 pF 8 pF 12 nC - nC - nC Switching Characteristics td(on) tr td(off) tf Turn-On Delay Time Turn-On Rise Time Turn-Off Delay Time Turn-Off Fall Time VDD = 250 V, ID = 4.5 A VGS = 10 V, RGEN = 25 Ω Drain-Source Diode Characteristics IS Maximum Continuous Drain to Source Diode Forward Current ISM Maximum Pulsed Drain to Source Diode Forward Current VSD Drain to Source Diode Forward Voltage VGS = 0 V, ISD = 4.5 A trr Reverse Recovery Time Qrr Reverse Recovery Charge VGS = 0 V, ISD = 4.5 A dIF/dt = 100 A/µs Notes: 1: Repetitive rating: pulse-width limited by maximum junction temperature. 2: L = 15.8 mH, IAS = 4.5 A, VDD = 50 V, RG = 25 Ω, starting TJ = 25°C. 3: ISD ≤ 2.8 A, di/dt ≤ 200 A/µs , VDD ≤ BVDSS, starting TJ = 25°C. 4: Essentially independent of operating temperature typical characteristics. (Note 4) - - 12 35 ns 22 55 ns 28 65 ns 21 50 ns - 4.5 A - 18 A - 1.4 V 210 - ns 1.1 - C ©2010 Fairchild Semiconductor Corporation FDP5N50NZ / FDPF5N50NZ Rev. C1 2 www.fairchildsemi.com FDP5N50NZ / FDPF5N50NZ — N-Channel UniFETTM II MOSFET Typical Performance Characteristics Figure 1. On-Region Characteristics 10 VGS = 15.0 V 10.0 V 8.0 V 7.0 V 6.5 V 6.0 V 5.5 V 1 ID, Drain Current[A] 0.1 0.1 *Notes: 1. 250s Pulse Test 2. TC = 25oC 1 10 20 VDS, Drain-Source Voltage[V] Figure 3. On-Resistance Variation vs. Drain Current and Gate Voltage 4 RDS(ON) [], Drain-Source On-Resistance 3 VGS = 10V 2 VGS = 20V 1 *Notes: TC = 25oC 0 2 4 6 8 10 ID, Drain Current [A.


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