K1194

SHINDENGEN VR Series Power MOSFET N-Channel Enhancement type 2SK1194 ( F05E23 ) 230V 0.5A OUTLINE DIMENSIONS Case : E-pack (Unit : mm) FEATURES Applicable to 4V drive. The static Rds(on) is small. Built-in ZD for Gate Protection. APPLICATION DC/DC converters Power supplies of DC 12-24V input Product related to Integrated Service Digital Network RATINGS Copyright & Copy;1999 Shindengen Electric Mfg.Co.Ltd VR Series Power MOSFET 2SK1194 ( F05E23 ) ●Electrical Characteristics Tc = 25℃ Item Symbole Conditions Drain-Source Breakdown Voltage V(BR)DSS ID = 250μA, VGS = 0V Zero Gate Voltage Drain Current IDSS VDS = 230V, VGS = 0V Gate-Source Leakage Current IGSS VGS = ±20V, VDS = 0V Forward Tranｓconductance gfs ID = 0.5A, VDS = 10V Static Drain-Source On-ｓtate Resistance RDS(ON) ID = 0.5A, VGS = 10V Gate Threshold Voltage VTH ID = 0.2mA, VDS = 10V Source-Drain Diode Forward Voltage VSD IS = 0.5A, VGS = 0V Thermal Resistance θjc junction to case Total Gate Charge Qg VGS = 10V, ID = 0.5A, VDD = 200V Input Capacitance Ciss Reverse Transfer Capacitance Crss VDS = 10V, VGS = 0V, f = 1MHZ Output Capacitance Coss Turn-On Time ton ID = 0.5A, VGS = 10V, RL = 200Ω Turn-Off Time toff Min. Typ. Max. Unit 230 V 250 μA ±0.1 0.2 0.4 S 5.5 8 Ω 234 V 1.5 20.8 ℃/Ｗ 2.7 nC 45 4.5 pF 30 30 60 ns 50 100 Copyright & Copy;2000 Shindengen Electric Mfg.Co.Ltd 2SK1194 Transfer Characteristics 1 Drain Current ID [A] 0.8 Tc = −55°C 25°C 0.6 100°C 150°C ...