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STB42N60M2-EP Dataheets PDF



Part Number STB42N60M2-EP
Manufacturers STMicroelectronics
Logo STMicroelectronics
Description N-channel Power MOSFET
Datasheet STB42N60M2-EP DatasheetSTB42N60M2-EP Datasheet (PDF)

STB42N60M2-EP, STP42N60M2-EP, STW42N60M2-EP N-channel 600 V, 0.076 Ω typ., 34 A MDmesh™ M2 EP Power MOSFETs in D²PAK, TO-220 and TO-247 packages Datasheet - production data TAB D²PAK 2 3 1 TAB TAB TO-220 1 23 TO-247 23 1 Features Order code VDS @ TJmax RDS(on) max. ID STB42N60M2-EP STP42N60M2-EP 650 V 0.087 Ω 34 A STW42N60M2-EP • Extremely low gate charge • Excellent output capacitance (COSS) profile • Very low turn-off switching losses • 100% avalanche tested • Zener-protected .

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STB42N60M2-EP, STP42N60M2-EP, STW42N60M2-EP N-channel 600 V, 0.076 Ω typ., 34 A MDmesh™ M2 EP Power MOSFETs in D²PAK, TO-220 and TO-247 packages Datasheet - production data TAB D²PAK 2 3 1 TAB TAB TO-220 1 23 TO-247 23 1 Features Order code VDS @ TJmax RDS(on) max. ID STB42N60M2-EP STP42N60M2-EP 650 V 0.087 Ω 34 A STW42N60M2-EP • Extremely low gate charge • Excellent output capacitance (COSS) profile • Very low turn-off switching losses • 100% avalanche tested • Zener-protected Figure 1: Internal schematic diagram D(2, TAB) Applications • Switching applications • Tailored for very high frequency converters (f > 150 kHz) G(1) S(3) Order code STB42N60M2-EP STP42N60M2-EP STW42N60M2-EP Description These devices are N-channel Power MOSFETs developed using MDmesh™ M2 EP enhanced performance technology. Thanks to their strip layout and improved vertical structure, the devices exhibit low on-resistance and optimized switching characteristics with very low turn-off switching losses, rendering them suitable for the most demanding very high frequency converters. AM01476v1 Table 1: Device summary Marking Package Packaging 42N60M2EP D²PAK TO-220 TO-247 Tape and reel Tube January 2015 DocID027327 Rev 1 This is information on a product in full production. 1/20 www.st.com Contents Contents STB42N60M2-EP, STP42N60M2-EP, STW42N60M2-EP 1 Electrical ratings ............................................................................. 3 2 Electrical characteristics ................................................................ 4 2.2 Electrical characteristics (curves)...................................................... 6 3 Test circuits ..................................................................................... 9 4 Package mechanical data ............................................................. 10 4.1 D²PAK package information ............................................................ 10 4.2 TO-220 type A package information................................................ 13 4.3 TO-247 package information........................................................... 15 5 Packaging mechanical data.......................................................... 17 6 Revision history ............................................................................ 19 2/20 DocID027327 Rev 1 STB42N60M2-EP, STP42N60M2-EP, STW42N60M2-EP Electrical ratings 1 Electrical ratings Symbol Table 2: Absolute maximum ratings Parameter Value VGS ID ID IDM(1) PTOT dv/dt(2) dv/dt(3) Tstg Tj Gate-source voltage Drain current (continuous) at TC = 25 °C Drain current (continuous) at TC = 100 °C Drain current (pulsed) Total dissipation at TC = 25 °C Peak diode recovery voltage slope MOSFET dv/dt ruggedness Storage temperature Max. operating junction temperature ± 25 34 22 136 250 15 50 - 55 to 150 150 Notes: (1)Pulse width limited by safe operating area. (2)ISD ≤ 34 A, di/dt ≤ 400 A/µs; VDS(peak) < V(BR)DSS, VDD = 400 V. (3)VDS ≤ 480 V Unit V A A A W V/ns V/ns °C °C Symbol Table 3: Thermal data Parameter D²PAK Value TO-220 Rthj-case Rthj-pcb(1) Thermal resistance junction-case max Thermal resistance junction-pcb max 0.50 30 Rthj-amb Thermal resistance junction-ambient max 62.5 Notes: (1)When mounted on FR-4 board of inch², 2oz Cu. TO247 50 Unit °C/W °C/W °C/W Symbol IAR EAS Table 4: Avalanche characteristics Parameter Avalanche current, repetetive or not repetetive (pulse width limited by Tjmax) Single pulse avalanche energy (starting Tj = 25 °C, ID = IAR; VDD = 50 V) Value 6 800 Unit A mJ DocID027327 Rev 1 3/20 Electrical characteristics STB42N60M2-EP, STP42N60M2-EP, STW42N60M2-EP 2 Electrical characteristics TC = 25 °C unless otherwise specified Table 5: On/off states Symbol Parameter Test conditions V(BR)DSS Drain-source breakdown voltage VGS = 0 V, ID = 1 mA IDSS Zero gate voltage Drain current IGSS VGS(th) RDS(on) Gate-body leakage current Gate threshold voltage Static drain-source onresistance VGS = 0 V, VDS = 600 V VGS = 0 V, VDS = 600 V, TC = 125 °C VDS = 0 V, VGS = ±25 V VDS = VGS, ID = 250 µA VGS = 10 V, ID = 17 A Min. Typ. Max. Unit 600 V 1 µA 100 µA ±10 µA 23 4V 0.076 0.087 Ω Symbol Parameter Ciss Input capacitance Coss Output capacitance Crss Reverse transfer capacitance Coss (1) eq. Equivalent output capacitance RG Intrinsic gate resistance Qg Total gate charge Qgs Gate-source charge Qgd Gate-drain charge Table 6: Dynamic Test conditions VDS= 100 V, f = 1 MHz, VGS = 0 V Min. - Typ. Max. Unit 2370 - pF 112 - pF - 2.5 - pF VDS = 0 to 480 V, VGS = 0 V f = 1 MHz, ID = 0 A VDD = 480 V, ID = 34 A, VGS = 10 V (see Figure 18: "Gate charge test circuit") - - 454 - pF 4.5 - Ω 55 - nC 8.5 - nC 25 - nC Notes: (1)Coss eq. is defined as a constant equivalent capacitance giving the same charging time as Coss when VDS increases from 0 to 80% VDSS Symbol Parameter Table 7: Switching energy Test conditions E(off) Turn-off ener.


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