Document
N‐Channel Logic Level Enhancement Mode Field Effect Transistor
Product Summary:
BVDSS
30V
D
RDSON (MAX.)
6.5mΩ
ID 75A UIS, Rg 100% Tested
G S
Pb‐Free Lead Plating & Halogen Free
ABSOLUTE MAXIMUM RATINGS (TC = 25 °C Unless Otherwise Noted)
PARAMETERS/TEST CONDITIONS
SYMBOL
EMB06N03H
LIMITS
UNIT
Gate‐Source Voltage
VGS ±20
Continuous Drain Current Pulsed Drain Current1
TC = 25 °C TC = 100 °C
ID IDM
75 45 160
Avalanche Current
IAS 53
Avalanche Energy Repetitive Avalanche Energy2
L = 0.1mH, ID=53A, RG=25Ω L = 0.05mH
EAS EAR
140 40
Power Dissipation
TC = 25 °C TC = 100 °C
Operating Junction & Storage Temperature Range
PD Tj, Tstg
60 32 ‐55 to 175
100% UIS testing in condition of VD=15V, L=0.1mH, VG=10V, IL=40A, Rated VDS=30V N‐CH THERMAL RESISTANCE RATINGS
THERMAL RESISTANCE
SYMBOL
TYPICAL
MAXIMUM
V A
mJ W °C UNIT
Junction‐to‐Case
RJC
Junction‐to‐Ambient
RJA
1Pulse width limited by maximum junction temperature. 2Duty cycle 1% 350°C / W when mounted on a 1 in2 pad of 2 oz copper.
2.5 °C / W
50
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ELECTRICAL CHARACTERISTICS (TC = 25 °C, Unless Otherwise Noted)
PARAMETER
SYMBOL
TEST CONDITIONS
EMB06N03H
LIMITS
UNIT
MIN TYP MAX
STATIC
Drain‐Source Breakdown Voltage Gate Threshold Voltage Gate‐Body Leakage Zero Gate Voltage Drain Current
On‐State Drain Current1 Drain‐Source On‐State Resistance1
Forward Transconductance1
V(BR)DSS VGS(th) IGSS IDSS
ID(ON) RDS(ON)
gfs
VGS = 0V, ID = 250A VDS = VGS, ID = 250A VDS = 0V, VGS = ±20V VDS = 24V, VGS = 0V VDS = 20V, VGS = 0V, TJ = 125 °C VDS = 10V, VGS = 10V VGS = 10V, ID = 30A VGS = 4.5V, ID = 24A
VDS = 5V, ID = 24A
DYNAMIC
30
V
1 1.5 3
±100 nA
1 A
25
75
A
5.5 6.5 mΩ
8.8 11
25 S
Input Capacitance Output Capacitance
Ciss
Coss
VGS = 0V, VDS = 15V, f = 1MHz
Reverse Transfer Capacitance
Crss
Gate Resistance Total Gate Charge1,2
Gate‐Source Charge1,2 Gate‐Drain Charge1,2 Turn‐On Delay Time1,2 Rise Time1,2 Turn‐Off Delay Time1,2 Fall Time1,2
Rg Qg(VGS=10V) Qg(VGS=4.5V)
Qgs Qgd td(on) tr td(off) tf
VGS = 15mV, VDS = 0V, f = 1MHz
VDS = 15V, VGS = 10V, ID = 30A
VDS = 15V, ID = 24A, VGS = 10V, RGS = 2.7Ω
SOURCE‐DRAIN DIODE RATINGS AND CHARACTERISTICS (TC = 25 °C)
Continuous Current Pulsed Current3 Forward Voltage1
IS
ISM
VSD
IF = IS, VGS = 0V
Reverse Recovery Time
trr
Peak Reverse Recovery Current
IRM(REC)
IF = IS, dlF/dt = 100A / S
Reverse Recovery Charge
Qrr
1Pulse test : Pulse Width 300 sec, Duty Cycle 2%.
3292 501 355 1.2 48 27
6 16 20 15 65 10
75 150 1.3 32 200 12
pF Ω nC
nS
A V nS A nC
2009/6/8
p.2
2Independent of operating temperature. 3Pulse width limited by maximum junction temperature.
Ordering & Marking Information:
Device Name: EMB06N03H for EDFN 5 x 6
B06
N03
ABCDEFG
B06N03: Device Name ABCDEFG: Date Code
2009/6/8
EMB06N03H p.3
EMB06N03H
TYPICAL CHARACTERISTICS
I D ,Drain‐Source Current( A )
On‐Region Characteristics 100
10V 7V 5V
4.5V
4.3V
80
60
40
4V 3.8V
20
3.5V
R D S ( O N) ,Normalized Drain‐Source On‐Resistance
On‐Resistance Variation with Drain Current and Gate Voltage
3 V G S= 3.5V
2.5 4V 4.5V
2 5V
5.5V 1.5 6V
7V 10V 1
0 0 0.5
1 1.5
2 2.5
3
0.5
V D S ,Drain‐Source Voltage( V )
0 20
40 60
80 100
I D ,Drain Current( A )
On‐Resistance Variation with Temperature 1.8
I D = 30A VG S = 10V
1.6
On‐Resistance Variation with Gate‐Source Voltage
0.025 I D = 24A
0.020
R D S ( O N ) ,On‐Resistance( ohm )
R D S ( O N) ,Normalized Drain‐Source On‐Resistance
1.4
0.015
1.2
1.0
0.8
0.010 0.005
TA = 125 °C TA = 25° C
0.6 0
‐50 ‐25
0 25 50 75 100 125 150 175
2
4
6
8 10
Tj ,Junction Temperature(° C )
I S ,Reverse Drain Current( A )
Body Diode Forward Voltage Variation with
Transfer Characteristics
100
Source Current and Temperature
60
V D S = 10V
80
T A = ‐55 ° C
25 ° C 125 ° C
VG S = 0V 10
TA = 125°C
1
I D ,Drain Current( A )
60
40
25°C 0.1
‐55°C
0.01
20
0.001
0 012
3
45
0.0001 0
0.2
0.4
0.6
0.8
1.0 1.2 1.4
VG S ,Gate‐Source Voltage( V )
VS D ,Body Diode forward Voltage( V )
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EMB06N03H
G a te C h a rg e C h a ra c te ris tic s 12
ID = 3 0 A
10 8
V DS =5V
10V
VGS ,Gate-Source Voltage( V )
6
15V
4
2
0 0
20 40
60
Q g ,G a te C h a rg e ( n C )
C‐Capacitance( pF )
10 4 10 3 10 2
C a p a c ita n c e C h a ra c te ris tic s C is s
C oss C rss
f = 1 M H z V GS= 0 V
0 5 10 15 20 25 V DS ‐D ra in ‐S o u rc e V o lta g e ( V )
30
M.