B1391

2SB1391 Silicon PNP Triple Diffused Application Power switching Outline TO-220FM 123 1. Base 2. Collector 3. Emitter 2 1 2 kΩ (Typ) 200 Ω (Typ) 3 2SB1391 Absolute Maximum Ratings (Ta = 25°C) Item Collector to base voltage Collector to emitter voltage Emitter to base voltage Collector current Collector peak current Collector power dissipation Junction temperature Storage temperature Note: 1. Value at TC = 25°C. Symbol VCBO VCEO VEBO IC I C(peak) PC PC * 1 Tj Tstg Ratings –120 –120 –7 –8 –12 2 25 150 –55 to +150 Unit V V V A A W °C °C Electrical Characteristics (Ta = 25°C) Item Symbol Min Collector to base breakdown voltage V(BR)CBO –120 Collector to emitter breakdown V(BR)CEO voltage –120 Emitter to base breakdown voltage V(BR)EBO –7 Collector cutoff current DC current transfer ratio Collector to emitter saturation voltage Base to emitter saturation voltage Note: 1. Pulse test. I CBO I CEO hFE VCE(sat)1 VCE(sat)2 VBE(sat)1 VBE(sat)2 — — 1000 — — — — Typ — — — — — — — — — — Max Unit —V —V —V –10 µA –10 20000 –1.5 V –3.0 –2.0 V –3.5 Test conditions IC = –0.1 mA, IE = 0 IC = –25 mA, RBE = ∞ IE = –50 mA, IC = 0 VCB = –100 V, IE = 0 VCE = –100 V, RBE = ∞ VCE = –3 V, IC = –4 A*1 IC = –4 A, IB = –8 mA*1 IC = –8 A, IB = –80 mA*1 IC = –4 A, IB = –8 mA*1 IC = –8 A, IB = –80 mA*1 See switching characteristic curve of 2SB791(K). 2 Collector power dissipation Pc (W) Maximum Collector Dissipation Curve 30 20 10 0 50 100 150 Case Temperature TC (°C) Typical ...