LA733P
Amplifier Transistors
PNP Silicon
MAXIMUM RATINGS
Rating
Collector-Emitter Voltage
Collector-Base Voltage
Emitte...
LA733P
Amplifier
Transistors
PNP Silicon
MAXIMUM RATINGS
Rating
Collector-Emitter Voltage
Collector-Base Voltage
Emitter-Base Voltage
Collector Current – Continuous
Total Device Dissipation @ TA = 25°C Derate above 25°C
Total Device Dissipation @ TC = 25°C Derate above 25°C
Operating and Storage Junction Temperature Range
THERMAL CHARACTERISTICS
Characteristic
Thermal Resistance, Junction to Ambient
Thermal Resistance, Junction to Case
Symbol VCEO VCBO VEBO IC PD
PD
TJ, Tstg
Symbol RqJA RqJC
Value –48 –60 –5.0 –100
Unit Vdc Vdc Vdc mAdc
625 mW 5.0 mW/°C
1.5 12
–55 to +150
Watts mW/°C
°C
Max Unit 200 °C/W
83.3 °C/W
http://onsemi.com COLLECTOR 2
3 BASE
1 EMITTER
1 23 TO–92 CASE 29 STYLE 14
MARKING DIAGRAM
LA 733x YWW
LA733x = Specific Device Code x =P Y = Year WW = Work Week
ORDERING INFORMATION
Device
Package
Shipping
LA733P
TO–92
5000 Units/Box
© Semiconductor Components Industries, LLC, 2002
June, 2002 – Rev. 2
1
Publication Order Number: LA733P/D
LA733P
ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted)
Characteristic
Symbol
Min
Typ
Max Unit
Collector–Emitter Breakdown Voltage (IC = –1.0 mAdc, IB = 0)
V(BR)CEO
–48
–
– Vdc
Collector–Base Breakdown Voltage (IC = –10 mAdc, IE = 0)
Emitter–Base Breakdown Voltage (IE = –10 mAdc, IC = 0)
Collector–Base Leakage Current (VCB = –60 V)
V(BR)CBO
–60
–
– Vdc
V(BR)EBO
–5.0
–
– Vdc
ICBO
–
–
–100
nAdc
Emitter–Base Leakage Current (VEB = –5.0 V, IC = 0)
Collector–Emitter Leakage Cur...