VVZ24-14io1

Three Phase Half Controlled Rectifier Bridge VVZ 24 IdAVM = 27 A VRRM = 1200-1600 V VRSM VDSM V 1300 1500 1700 VRRM VDRM V 1200 1400 1600 Type VVZ 24-12io1 VVZ 24-14io1 VVZ 24-16io1 36 1 2 5 7 4 1 2 34 56 78 8 Symbol Conditions Maximum Ratings IdAV IdAVM IFRMS, ITRMS IFSM, ITSM I2t (di/dt)cr (dv/dt)cr VRGM PGM PGAVM TVJ TVJM Tstg VISOL Md Weight TK = 100°C; module module per leg 21 27 16 TVJ = 45°C; VR = 0 t = 10 ms (50 Hz), sine t = 8.3 ms (60 Hz), sine TVJ = TVJM VR = 0 t = 10 ms (50 Hz), sine t = 8.3 ms (60 Hz), sine TVJ = 45°C VR = 0 t = 10 ms (50 Hz), sine t = 8.3 ms (60 Hz), sine TVJ = TVJM VR = 0 t = 10 ms (50 Hz), sine t = 8.3 ms (60 Hz), sine TVJ = TVJM repetitive, IT = 50 A f =400 Hz, tP =200 μs VD = 2/3 VDRM IG = 0.3 A, non repetitive, IT = 1/3 IdAV diG/dt = 0.3 A/μs TVJ = TVJM; VDR = 2/3 VDRM RGK = ∞; method 1 (linear voltage rise) 300 320 270 290 450 430 365 350 150 500 1000 10 TVJ = TVJM IT = ITAVM tp = 30 μs tp = 500 μs tp = 10 ms ≤ 10 ≤5 ≤1 0.5 -40...+125 125 -40...+125 50/60 Hz, RMS IISOL ≤ 1 mA Mounting torque typ. t = 1 min t=1s (M5) (10-32 UNF) 3000 3600 2-2.5 18-22 28 A A A A A A A A2s A2s A2s A2s A/μs A/μs V/μs V W W W W °C °C °C V~ V~ Nm lb.in. g Data according to IEC 60747 and refer to a single thyristor/diode unless otherwise stated. Features ● Package with DCB ceramic base plate ● Isolation voltage 3600 V~ ● Planar passivated chips ● Soldering terminals ● UL registered E 72873 Applications ● Input rectifier fo...