K50N60T

IKW50N60T TRENCHSTOP™ Series q Low Loss DuoPack : IGBT in TRENCHSTOP™ and Fieldstop technology with soft, fast recovery anti-parallel Emitter Controlled HE diode Features:  Very low VCE(sat) 1.5V (typ.)  Maximum Junction Temperature 175°C  Short circuit withstand time 5s  Designed for : - Frequency Converters - Uninterrupted Power Supply  TRENCHSTOP™ and Fieldstop technology for 600V applications offers : - very tight parameter distribution - high ruggedness, temperature stable behavior - very high switching speed  Positive temperature coefficient in VCE(sat)  Low EMI  Low Gate Charge  Very soft, fast recovery anti-parallel Emitter Controlled HE diode  Qualified according to JEDEC1 for target applications  Pb-free lead plating; RoHS compliant  Complete product spectrum and PSpice Models : http://www.infineon.com/igbt/ Type IKW50N60T VCE 600V IC 50A VCE(sat),Tj=25°C 1.5V Tj,max 175C Marking K50T60 C G E PG-TO247-3 Package PG-TO247-3 Maximum Ratings Parameter Collector-emitter voltage, Tj ≥ 25C DC collector current, limited by Tjmax TC = 25C TC = 100C Pulsed collector current, tp limited by Tjmax Turn off safe operating area, VCE = 600V, Tj = 175C, tp = 1µs Diode forward current, limited by Tjmax TC = 25C TC = 100C Diode pulsed current, tp limited by Tjmax Gate-emitter voltage Short circuit withstand time3) VGE = 15V, VCC  400V, Tj  150C Power dissipation TC = 25C Operating junction temperature Storage temperature Soldering temperature, 1.6mm...