Si7686DP

N-Channel 30-V (D-S) MOSFET Si7686DP Vishay Siliconix PRODUCT SUMMARY VDS (V) RDS(on) (Ω) 30 0.0095 at VGS = 10 V 0.014 at VGS = 4.5 V PowerPAK SO-8 ID (A)a 35 35 Qg (Typ.) 9.2 nC 6.15 mm S 1S 5.15 mm 2 S 3G 4 D 8D 7 D 6 D 5 Bottom View Ordering Information: Si7686DP-T1-E3 (Lead (Pb)-free) Si7686DP-T1-GE3 (Lead (Pb)-free and Halogen-free) FEATURES Halogen-free available TrenchFET® Power MOSFET New Low Thermal Resistance PowerPAK® Package with Low 1.07 mm Profile Optimized for High-Side Synchronous Operation 100 % Rg Tested RoHS COMPLIANT Rectifier APPLICATIONS DC/DC Converters D G S N-Channel MOSFET ABSOLUTE MAXIMUM RATINGS TA = 25 °C, unless otherwise noted Parameter Symbol Drain-Source Voltage VDS Gate-Source Voltage VGS TC = 25 °C Continuous Drain Current (TJ = 150 °C) TC = 70 °C TA = 25 °C ID Pulsed Drain Current TA = 70 °C IDM Continuous Source-Drain Diode Current TC = 25 °C TA = 25 °C IS Single Pulse Avalanche Current Avalanche Energy L = 0.1 mH IAS EAS TC = 25 °C Maximum Power Dissipation TC = 70 °C TA = 25 °C PD Operating Junction and Storage Temperature Range TA = 70 °C TJ, Tstg Soldering Recommendations (Peak Temperature)d, e Limit 30 ± 20 35a 35a 17.9b, c 14.3b, c 50 31.5 4.2b, c 10 5 37.9 24.2 5b, c 3.2b, c - 55 to 150 260 Unit V A mJ W °C THERMAL RESISTANCE RATINGS Parameter Maximum Junction-to-Ambientb, f Maximum Junction-to-Case (Drain) t ≤ 10 s Steady State Symbol RthJA RthJC Typical 21 2.8 M...