P5506BDG

NIKO-SEM N-Channel Logic Level Enhancement P5506BDG Mode Field Effect Transistor TO-252 Halogen-Free & Lead-Free PRODUCT SUMMARY V(BR)DSS RDS(ON) 60 55mΩ ID 22A D G 1.GATE 2.DRAIN 3.SOURCE S ABSOLUTE MAXIMUM RATINGS (TC = 25 °C Unless Otherwise Noted) PARAMETERS/TEST CONDITIONS SYMBOL Drain-Source Voltage Gate-Source Voltage Continuous Drain Current Pulsed Drain Current1 TC = 25 °C TC = 70 °C Power Dissipation TC = 25 °C TC = 70 °C Operating Junction & Storage Temperature Range Lead Temperature (1/16” from case for 10 sec.) VDS VGS ID IDM PD Tj, Tstg TL LIMITS 60 ±20 22 18 80 50 32 -55 to 150 275 UNITS V V A W °C THERMAL RESISTANCE RATINGS THERMAL RESISTANCE SYMBOL TYPICAL MAXIMUM UNITS Junction-to-Case RθJc 2.5 °C / W Junction-to-Ambient RθJA 1Pulse width limited by maximum junction temperature. ELECTRICAL CHARACTERISTICS (TC = 25 °C, Unless Otherwise Noted) PARAMETER SYMBOL TEST CONDITIONS 55 °C / W LIMITS UNIT MIN TYP MAX STATIC Drain-Source Breakdown Voltage Gate Threshold Voltage Gate-Body Leakage V(BR)DSS VGS(th) IGSS Zero Gate Voltage Drain Current IDSS On-State Drain Current1 Drain-Source On-State Resistance1 ID(ON) RDS(ON) VGS = 0V, ID = 250µA VDS = VGS, ID = 250µA VDS = 0V, VGS = ±20V VDS = 48V, VGS = 0V VDS = 40V, VGS = 0V, TJ = 55 °C VDS = 5V, VGS = 10V VGS = 4.5V, ID = 8A VGS = 10V, ID = 10A 60 1 1.5 2.5 V ±250 nA 1 µA 10 22 A 59 75 mΩ 42 55 REV 1.0 1 Aug-24-2009 NIKO-SEM N-Channel Logic Level Enhanc...