NPT1015B
GaN Wideband Transistor 28 V, 45 W DC - 3.5 GHz
Features
GaN on Si HEMT D-Mode Transistor Suitable for line...
NPT1015B
GaN Wideband
Transistor 28 V, 45 W DC - 3.5 GHz
Features
GaN on Si HEMT D-Mode
Transistor Suitable for linear and saturated applications Tunable from DC - 3.5 GHz 28 V Operation 12 dB Gain @ 2.5 GHz 54 % Drain Efficiency @ 2.5 GHz 100 % RF Tested Standard metal ceramic package with bolt down
flange RoHS* Compliant
Description
The NPT1015 GaN HEMT is a wideband
transistor optimized for DC - 3.5 GHz operation. This device supports CW, pulsed, and linear operation with output power levels to 45 W (46.5 dBm) in an industry standard metal-ceramic package with bolt down flange.
The NPT1015 is ideally suited for defense communications, land mobile radio, avionics, wireless infrastructure, ISM applications and VHF/ UHF/L/S-band radar.
Built using the SIGANTIC® process - a proprietary GaN-on-Silicon technology.
Ordering Information
Part Number NPT1015B
NPT1015B-SMBPPR
Package bulk quantity
sample
Functional Schematic
Rev. V2
RFIN / VG 1
3 Flange
2 RFOUT / VD
Pin Configuration
Pin No.
Pin Name
Function
1 RFIN / VG RF Input / Gate
2
RFOUT / VD
RF Output / Drain
3
Flange1
Ground / Source
1. The Flange must be connected to RF and DC ground. This path must also provide a low thermal resistance heat path.
* Restrictions on Hazardous Substances, European Union Directive 2011/65/EU.
1
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