IRG4BC20MDPbF

PD -94908A IRG4BC20MDPbF INSULATED GATE BIPOLAR TRANSISTOR WITH Short Circuit Rated ULTRAFAST SOFT RECOVERY DIODE Features Rugged: 10µsec short circuit capable at VGS=15V Low VCE(on) for 4 to 10kHz applications IGBT Co-packaged with ultra-soft-recovery antiparallel diode Industry standard TO-220AB package Lead-Free G C Fast IGBT VCES = 600V VCE(on) typ. = 1.85V Benefits Offers highest efficiency and short circuit capability for intermediate applications Provides best efficiency for the mid range frequency (4 to 10kHz) Optimized for Appliance Motor Drives, Industrial (Short Circuit Proof) Drives and Intermediate Frequency Range Drives High noise immune "Positive Only" gate driveNegative bias gate drive not necessary For Low EMI designs- requires little or no snubbing Single Package switch for bridge circuit applications Compatible with high voltage Gate Driver IC's Allows simpler gate drive Absolute Maximum Ratings E n-channel @VGE = 15V, IC = 11A TO-220AB Parameter Max. Units VCES IC @ TC = 25°C IC @ TC = 100°C ICM ILM IF @ TC = 100°C tsc IFM VGE PD @ TC = 25°C PD @ TC = 100°C TJ TSTG Collector-to-Emitter Voltage Continuous Collector Current Continuous Collector Current Pulsed Collector Current  Clamped Inductive Load Current ‚ Diode Continuous Forward Current Short Circuit Withstand Time Diode Maximum Forward Current Gate-to-Emitter Voltage Maximum Power Dissipation Maximum Power Dissipation Operating Junction and Storage Temperatur...