NTMFS5C612NL

NTMFS5C612NL MOSFET – Power, Single, N-Channel 60 V, 1.5 mW, 235 A Features Small Footprint (5x6 mm) for Compact Design Low RDS(on) to Minimize Conduction Losses Low QG and Capacitance to Minimize Driver Losses NTMFS5C612NLWF − Wettable Flank Option for Enhanced Optical Inspection These Devices are Pb−Free and are RoHS Compliant www.onsemi.com V(BR)DSS 60 V RDS(ON) MAX 1.5 mW @ 10 V 2.3 mW @ 4.5 V ID MAX 235 A MAXIMUM RATINGS (TJ = 25°C unless otherwise noted) Parameter Symbol Value Unit Drain−to−Source Voltage VDSS 60 V Gate−to−Source Voltage VGS ±20 V Continuous Drain Current RqJC (Notes 1, 3) Power Dissipation RqJC (Note 1) TC = 25°C ID Steady TC = 100°C State TC = 25°C PD TC = 100°C 235 A 166 167 W 83 Continuous Drain Current RqJA (Notes 1, 2, 3) Power Dissipation RqJA (Notes 1 & 2) TA = 25°C ID Steady TA = 100°C State TA = 25°C PD TA = 100°C 36 A 25 3.8 W 1.9 Pulsed Drain Current TA = 25°C, tp = 10 ms IDM 900 A Operating Junction and Storage Temperature TJ, Tstg − 55 to °C +175 Source Current (Body Diode) Single Pulse Drain−to−Source Avalanche Energy (IL(pk) = 17 A) Lead Temperature for Soldering Purposes (1/8″ from case for 10 s) IS 164 A EAS 451 mJ TL 260 °C Stresses exceeding those listed in the Maximum Ratings table may damage the device. If any of these limits are exceeded, device functionality should not be assumed, damage may occur and reliability may be affected. THERMAL RESISTANCE MAXIMUM RATING...