Power MOSFET
NTMFS5C410NL
MOSFET – Power, Single, N-Channel
40 V, 0.82 mW, 330 A
Features
• Small Footprint (5x6 mm) for Compact De...
Description
NTMFS5C410NL
MOSFET – Power, Single, N-Channel
40 V, 0.82 mW, 330 A
Features
Small Footprint (5x6 mm) for Compact Design
Low RDS(on) to Minimize Conduction Losses Low QG and Capacitance to Minimize Driver Losses These Devices are Pb−Free, Halogen Free/BFR Free and are RoHS
Compliant
MAXIMUM RATINGS (TJ = 25°C unless otherwise noted)
Parameter
Symbol Value
Unit
Drain−to−Source Voltage
Gate−to−Source Voltage
Continuous Drain C(Nuortreesnt1R, 3qJ)C Power Dissipation RqJC (Note 1)
Steady State
TC = 25°C TC = 100°C TC = 25°C TC = 100°C
Continuous Drain C(Nuortreesnt1R, 2qJ,A3) Power Dissipation RqJA (Notes 1 & 2)
Steady State
TA = 25°C TA = 100°C TA = 25°C TA = 100°C
Pulsed Drain Current TA = 25°C, tp = 10 ms
Operating Junction and Storage Temperature
VDSS VGS ID
PD
ID
PD
IDM TJ, Tstg
40 ±20 330
230
139 56 50
35 3.2 1.3 900 −55 to +175
V V A
W
A
W
A °C
Source Current (Body Diode)
IS 162 A
Single Pulse Drain−to−Source Avalanche Energy (IL(pk) = 29 A)
EAS 706 mJ
Lead Temperature for Soldering Purposes (1/8″ from case for 10 s)
TL 260 °C
Stresses exceeding those listed in the Maximum Ratings table may damage the device. If any of these limits are exceeded, device functionality should not be assumed, damage may occur and reliability may be affected.
THERMAL RESISTANCE MAXIMUM RATINGS
Parameter
Symbol Value Unit
Junction−to−Case − Steady State
RqJC
0.9 °C/W
Junction−to−Ambient − Steady State (Note 2)
RqJA
39
1. The entire application environm...
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