DatasheetsPDF.com

VUO52-14NO1 Dataheets PDF



Part Number VUO52-14NO1
Manufacturers IXYS Corporation
Logo IXYS Corporation
Description Standard Rectifier Module
Datasheet VUO52-14NO1 DatasheetVUO52-14NO1 Datasheet (PDF)

Standard Rectifier Module 3~ Rectifier Bridge Part number VUO52-14NO1 4/5 6 8 10 1/2 VUO52-14NO1 3~ Rectifier VRRM = I DAV = I FSM = 1400 V 60 A 350 A Features / Advantages: ● Package with DCB ceramic ● Reduced weight ● Improved temperature and power cycling ● Planar passivated chips ● Very low forward voltage drop ● Very low leakage current Applications: ● Diode for main rectification ● For three phase bridge configurations ● Supplies for DC power equipment ● Input rectifiers for PWM i.

  VUO52-14NO1   VUO52-14NO1



Document
Standard Rectifier Module 3~ Rectifier Bridge Part number VUO52-14NO1 4/5 6 8 10 1/2 VUO52-14NO1 3~ Rectifier VRRM = I DAV = I FSM = 1400 V 60 A 350 A Features / Advantages: ● Package with DCB ceramic ● Reduced weight ● Improved temperature and power cycling ● Planar passivated chips ● Very low forward voltage drop ● Very low leakage current Applications: ● Diode for main rectification ● For three phase bridge configurations ● Supplies for DC power equipment ● Input rectifiers for PWM inverter ● Battery DC power supplies ● Field supply for DC motors Package: V1-A-Pack ● Isolation Voltage: 3600 V~ ● Industry standard outline ● RoHS compliant ● Soldering pins for PCB mounting ● Height: 17 mm ● Base plate: DCB ceramic ● Reduced weight ● Advanced power cycling IXYS reserves the right to change limits, conditions and dimensions. © 2013 IXYS all rights reserved Data according to IEC 60747and per semiconductor unless otherwise specified 20130305b Rectifier Symbol VRSM VRRM IR VF I DAV Definition Conditions max. non-repetitive reverse blocking voltage max. repetitive reverse blocking voltage reverse current, drain current VR = 1400 V VR = 1400 V forward voltage drop IF = 20 A IF = 60 A IF = 20 A IF = 60 A bridge output current TC = 110°C rectangular d=⅓ VF0 rF R thJC R thCH Ptot I FSM threshold voltage slope resistance for power loss calculation only thermal resistance junction to case thermal resistance case to heatsink total power dissipation max. forward surge current t = 10 ms; (50 Hz), sine t = 8,3 ms; (60 Hz), sine t = 10 ms; (50 Hz), sine t = 8,3 ms; (60 Hz), sine I²t value for fusing t = 10 ms; (50 Hz), sine t = 8,3 ms; (60 Hz), sine t = 10 ms; (50 Hz), sine t = 8,3 ms; (60 Hz), sine CJ junction capacitance VR = 400 V; f = 1 MHz VUO52-14NO1 TVJ = 25°C TVJ = 25°C TVJ = 25°C TVJ = 150°C TVJ = 25°C TVJ = 125°C TVJ = 150°C Ratings min. typ. max. 1500 1400 40 1.5 1.13 1.44 1.07 1.50 60 Unit V V µA mA V V V V A TVJ = 150°C TC = 25°C TVJ = 45°C VR = 0 V TVJ = 150°C VR = 0 V TVJ = 45°C VR = 0 V TVJ = 150°C VR = 0 V TVJ = 25°C 0.83 V 11.5 mΩ 1.3 K/W 0.3 K/W 95 W 350 A 380 A 300 A 320 A 615 A²s 600 A²s 450 A²s 425 A²s 10 pF IXYS reserves the right to change limits, conditions and dimensions. © 2013 IXYS all rights reserved Data according to IEC 60747and per semiconductor unless otherwise specified 20130305b VUO52-14NO1 Package V1-A-Pack Symbol I RMS Tstg T VJ Weight Definition RMS current storage temperature virtual junction temperature Conditions per terminal MD mounting torque d Spp/App d Spb/Apb creepage distance on surface | striking distance through air V ISOL isolation voltage t = 1 second t = 1 minute terminal to terminal terminal to backside 50/60 Hz, RMS; IISOL ≤ 1 mA Ratings min. -40 -40 2 typ. max. 100 125 150 37 2.5 6.0 12.0 3600 3000 Unit A °C °C g Nm mm mm V V Date Code Location yywwA Part Number (Typ) Lot No.: 2D Data Matrix Ordering Standard Part Number VUO52-14NO1 Marking on Product VUO52-14NO1 Delivery Mode Box Quantity Code No. 10 461385 Similar Part VUO52-08NO1 VUO52-12NO1 VUO52-16NO1 VUO52-18NO1 VUO52-20NO1 VUO52-22NO1 VUO34-16NO1 VUO34-18NO1 Package V1-A-Pack V1-A-Pack V1-A-Pack V1-A-Pack V1-A-Pack V1-A-Pack V1-A-Pack V1-A-Pack Voltage class 800 1200 1600 1800 2000 2200 1600 1800 Equivalent Circuits for Simulation I V0 R0 Rectifier V 0 max R0 max threshold voltage slope resistance * 0.83 10.2 * on die level T VJ = 150°C V mΩ IXYS reserves the right to change limits, conditions and dimensions. © 2013 IXYS all rights reserved Data according to IEC 60747and per semiconductor unless otherwise specified 20130305b Outlines V1-A-Pack VUO52-14NO1 4/5 6 8 10 1/2 IXYS reserves the right to change limits, conditions and dimensions. © 2013 IXYS all rights reserved Data according to IEC 60747and per semiconductor unless otherwise specified 20130305b VUO52-14NO1 Rectifier 80 300 50 Hz 0.8 x V RRM 1000 VR = 0 V 60 IF 40 [A] 20 TVJ = 125°C 150°C 250 IFSM 200 [A] 150 TVJ = 45°C TVJ = 130°C I2t [A2s] TVJ = 45°C TVJ = 130°C TVJ = 25°C 0 0.4 0.8 1.2 1.6 2.0 VF [V] Fig. 1 Forward current versus voltage drop per diode 100 10-3 10-2 10-1 100 t [s] Fig. 2 Surge overload current 100 1 t [ms] 10 Fig. 3 I2t versus time per diode 30 25 20 Ptot 15 [W] 10 DC = 1 0.5 0.4 0.33 0.17 0.08 RthJA: 0.6 KW 0.8 KW 1 KW 2 KW 4 KW 8 KW 5 0 0 5 10 15 20 25 0 IdAVM [A] 25 50 75 100 125 150 TA [°C] Fig. 4 Power dissipation vs. direct output current & ambient temperature 80 60 IF(AV)M 40 [A] 20 DC = 1 0.5 0.4 0.33 0.17 0.08 0 0 25 50 75 100 125 150 TC [°C] Fig. 5 Max. forward current vs. case temperature 1.6 1.2 ZthJC 0.8 [K/W] 0.4 0.0 1 10 100 1000 t [ms] Fig. 6 Transient thermal impedance junction to case 10000 Constants for ZthJC calculation: i Rth (K/W) ti (s) 1 0.06070 0.008 2 0.173 0.05 3 0.3005 0.06 4 0.463 0.3 5 0.3028 0.15 IXYS reserves the right to change limits, conditions a.


VUO52-12NO1 VUO52-14NO1 VUO52-16NO1


@ 2014 :: Datasheetspdf.com :: Semiconductors datasheet search & download site.
(Privacy Policy & Contact)