Document
Standard Rectifier Module
3~ Rectifier Bridge
Part number
VUO52-14NO1
4/5
6 8 10
1/2
VUO52-14NO1
3~ Rectifier
VRRM = I DAV = I FSM =
1400 V 60 A
350 A
Features / Advantages:
● Package with DCB ceramic ● Reduced weight ● Improved temperature and power cycling ● Planar passivated chips ● Very low forward voltage drop ● Very low leakage current
Applications:
● Diode for main rectification ● For three phase bridge configurations ● Supplies for DC power equipment ● Input rectifiers for PWM inverter ● Battery DC power supplies ● Field supply for DC motors
Package: V1-A-Pack
● Isolation Voltage: 3600 V~ ● Industry standard outline ● RoHS compliant ● Soldering pins for PCB mounting ● Height: 17 mm ● Base plate: DCB ceramic ● Reduced weight ● Advanced power cycling
IXYS reserves the right to change limits, conditions and dimensions.
© 2013 IXYS all rights reserved
Data according to IEC 60747and per semiconductor unless otherwise specified
20130305b
Rectifier
Symbol VRSM VRRM IR
VF
I DAV
Definition
Conditions
max. non-repetitive reverse blocking voltage
max. repetitive reverse blocking voltage
reverse current, drain current
VR = 1400 V
VR = 1400 V
forward voltage drop
IF = 20 A
IF = 60 A
IF = 20 A
IF = 60 A
bridge output current
TC = 110°C
rectangular
d=⅓
VF0 rF R thJC R thCH Ptot I FSM
threshold voltage slope resistance
for power loss calculation only
thermal resistance junction to case
thermal resistance case to heatsink
total power dissipation max. forward surge current
t = 10 ms; (50 Hz), sine t = 8,3 ms; (60 Hz), sine
t = 10 ms; (50 Hz), sine
t = 8,3 ms; (60 Hz), sine
I²t value for fusing
t = 10 ms; (50 Hz), sine
t = 8,3 ms; (60 Hz), sine
t = 10 ms; (50 Hz), sine
t = 8,3 ms; (60 Hz), sine
CJ junction capacitance
VR = 400 V; f = 1 MHz
VUO52-14NO1
TVJ = 25°C TVJ = 25°C TVJ = 25°C TVJ = 150°C TVJ = 25°C
TVJ = 125°C
TVJ = 150°C
Ratings
min. typ. max. 1500 1400 40 1.5 1.13 1.44 1.07 1.50 60
Unit V V
µA mA
V V V V A
TVJ = 150°C
TC = 25°C TVJ = 45°C VR = 0 V TVJ = 150°C VR = 0 V TVJ = 45°C VR = 0 V TVJ = 150°C VR = 0 V TVJ = 25°C
0.83 V 11.5 mΩ
1.3 K/W 0.3 K/W
95 W 350 A 380 A 300 A 320 A 615 A²s 600 A²s 450 A²s 425 A²s 10 pF
IXYS reserves the right to change limits, conditions and dimensions.
© 2013 IXYS all rights reserved
Data according to IEC 60747and per semiconductor unless otherwise specified
20130305b
VUO52-14NO1
Package V1-A-Pack
Symbol I RMS Tstg T VJ Weight
Definition
RMS current storage temperature virtual junction temperature
Conditions
per terminal
MD mounting torque
d Spp/App d Spb/Apb
creepage distance on surface | striking distance through air
V ISOL
isolation voltage
t = 1 second t = 1 minute
terminal to terminal terminal to backside
50/60 Hz, RMS; IISOL ≤ 1 mA
Ratings
min.
-40 -40
2
typ. max. 100 125 150
37 2.5
6.0
12.0 3600
3000
Unit A °C °C g
Nm
mm mm
V V
Date Code Location
yywwA Part Number (Typ) Lot No.:
2D Data Matrix
Ordering Standard
Part Number VUO52-14NO1
Marking on Product VUO52-14NO1
Delivery Mode Box
Quantity Code No. 10 461385
Similar Part VUO52-08NO1 VUO52-12NO1 VUO52-16NO1 VUO52-18NO1 VUO52-20NO1 VUO52-22NO1 VUO34-16NO1 VUO34-18NO1
Package V1-A-Pack V1-A-Pack V1-A-Pack V1-A-Pack V1-A-Pack V1-A-Pack V1-A-Pack V1-A-Pack
Voltage class 800
1200 1600 1800 2000 2200 1600 1800
Equivalent Circuits for Simulation
I V0
R0
Rectifier
V 0 max R0 max
threshold voltage slope resistance *
0.83 10.2
* on die level
T VJ = 150°C
V mΩ
IXYS reserves the right to change limits, conditions and dimensions.
© 2013 IXYS all rights reserved
Data according to IEC 60747and per semiconductor unless otherwise specified
20130305b
Outlines V1-A-Pack
VUO52-14NO1
4/5
6 8 10
1/2
IXYS reserves the right to change limits, conditions and dimensions.
© 2013 IXYS all rights reserved
Data according to IEC 60747and per semiconductor unless otherwise specified
20130305b
VUO52-14NO1
Rectifier
80
300
50 Hz 0.8 x V RRM
1000 VR = 0 V
60
IF 40
[A]
20
TVJ = 125°C 150°C
250
IFSM 200
[A]
150
TVJ = 45°C TVJ = 130°C
I2t [A2s]
TVJ = 45°C TVJ = 130°C
TVJ = 25°C 0 0.4 0.8 1.2 1.6 2.0
VF [V] Fig. 1 Forward current versus
voltage drop per diode
100
10-3
10-2
10-1
100
t [s]
Fig. 2 Surge overload current
100 1
t [ms]
10
Fig. 3 I2t versus time per diode
30
25
20 Ptot
15 [W]
10
DC = 1
0.5 0.4 0.33 0.17 0.08
RthJA: 0.6 KW 0.8 KW 1 KW 2 KW 4 KW 8 KW
5
0 0 5 10 15 20 25 0
IdAVM [A]
25 50 75 100 125 150 TA [°C]
Fig. 4 Power dissipation vs. direct output current & ambient temperature
80
60 IF(AV)M
40 [A]
20
DC = 1
0.5 0.4 0.33 0.17 0.08
0 0 25 50 75 100 125 150 TC [°C]
Fig. 5 Max. forward current vs. case temperature
1.6
1.2 ZthJC
0.8 [K/W]
0.4
0.0 1
10 100 1000 t [ms]
Fig. 6 Transient thermal impedance junction to case
10000
Constants for ZthJC calculation:
i Rth (K/W)
ti (s)
1 0.06070 0.008
2 0.173
0.05
3 0.3005
0.06
4 0.463
0.3
5 0.3028
0.15
IXYS reserves the right to change limits, conditions a.