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VUO30-18NO3 Dataheets PDF



Part Number VUO30-18NO3
Manufacturers IXYS Corporation
Logo IXYS Corporation
Description Standard Rectifier Module
Datasheet VUO30-18NO3 DatasheetVUO30-18NO3 Datasheet (PDF)

Standard Rectifier Module 3~ Rectifier Bridge Part number VUO30-18NO3 - ~~~ + VUO30-18NO3 3~ Rectifier VRRM = I DAV = I FSM = 800 V 45 A 300 A Features / Advantages: ● Package with DCB ceramic ● Reduced weight ● Improved temperature and power cycling ● Planar passivated chips ● Very low forward voltage drop ● Very low leakage current Applications: ● Diode for main rectification ● For three phase bridge configurations ● Supplies for DC power equipment ● Input rectifiers for PWM inverter ● B.

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Standard Rectifier Module 3~ Rectifier Bridge Part number VUO30-18NO3 - ~~~ + VUO30-18NO3 3~ Rectifier VRRM = I DAV = I FSM = 800 V 45 A 300 A Features / Advantages: ● Package with DCB ceramic ● Reduced weight ● Improved temperature and power cycling ● Planar passivated chips ● Very low forward voltage drop ● Very low leakage current Applications: ● Diode for main rectification ● For three phase bridge configurations ● Supplies for DC power equipment ● Input rectifiers for PWM inverter ● Battery DC power supplies ● Field supply for DC motors Package: FO-F-B ● Isolation Voltage: 3600 V~ ● Industry standard outline ● RoHS compliant ● ¼“ fast-on terminals ● Easy to mount with two screws ● Base plate: DCB ceramic ● Reduced weight ● Advanced power cycling IXYS reserves the right to change limits, conditions and dimensions. © 2013 IXYS all rights reserved Data according to IEC 60747and per semiconductor unless otherwise specified 20130515b Rectifier Symbol VRSM VRRM IR VF I DAV Definition Conditions max. non-repetitive reverse blocking voltage max. repetitive reverse blocking voltage reverse current VR = 800 V VR = 800 V forward voltage drop IF = 15 A IF = 45 A IF = 15 A IF = 45 A bridge output current TC = 110°C rectangular d=⅓ VF0 rF R thJC R thCH Ptot I FSM threshold voltage slope resistance for power loss calculation only thermal resistance junction to case thermal resistance case to heatsink total power dissipation max. forward surge current t = 10 ms; (50 Hz), sine t = 8,3 ms; (60 Hz), sine t = 10 ms; (50 Hz), sine t = 8,3 ms; (60 Hz), sine I²t value for fusing t = 10 ms; (50 Hz), sine t = 8,3 ms; (60 Hz), sine t = 10 ms; (50 Hz), sine t = 8,3 ms; (60 Hz), sine CJ junction capacitance VR = 400 V; f = 1 MHz VUO30-18NO3 TVJ = 25°C TVJ = 25°C TVJ = 25°C TVJ = 150°C TVJ = 25°C TVJ = 125°C TVJ = 150°C Ratings min. typ. max. 900 800 40 1.5 1.10 1.38 1.01 1.38 45 Unit V V µA mA V V V V A TVJ = 150°C TC = 25°C TVJ = 45°C VR = 0 V TVJ = 150°C VR = 0 V TVJ = 45°C VR = 0 V TVJ = 150°C VR = 0 V TVJ = 25°C 0.80 V 12.9 mΩ 2 K/W 0.4 K/W 60 W 300 A 325 A 255 A 275 A 450 A²s 440 A²s 325 A²s 315 A²s 10 pF IXYS reserves the right to change limits, conditions and dimensions. © 2013 IXYS all rights reserved Data according to IEC 60747and per semiconductor unless otherwise specified 20130515b VUO30-18NO3 Package FO-F-B Symbol I RMS Tstg T VJ Weight Definition RMS current storage temperature virtual junction temperature Conditions per terminal M D mounting torque d Spp/App d Spb/Apb creepage distance on surface | striking distance through air V ISOL isolation voltage t = 1 second t = 1 minute terminal to terminal terminal to backside 50/60 Hz, RMS; IISOL ≤ 1 mA Ratings min. -40 -40 2 typ. max. 100 125 150 45 2.5 18.0 6.0 26.0 20.0 3600 3000 Unit A °C °C g Nm mm mm V V Date Code + Assembly line yywwx Part Number Lot Number Ordering Standard Part Number VUO30-18NO3 Marking on Product VUO30-18NO3 Delivery Mode Box Quantity Code No. 10 454362 Equivalent Circuits for Simulation I V0 R0 Rectifier V 0 max R0 max threshold voltage slope resistance * 0.8 11.7 * on die level T VJ = 150 °C V mΩ IXYS reserves the right to change limits, conditions and dimensions. © 2013 IXYS all rights reserved Data according to IEC 60747and per semiconductor unless otherwise specified 20130515b Outlines FO-F-B VUO30-18NO3 6.25 6.25 12.5 12.5 6.3 x 0.8 24.5 21 5.3 4 2 31.6 10 10 48 1.6 52 7 41 5.3 x 6.9 ++ ~~~ __ 63 - ~~~ + 8 9 63 45° IXYS reserves the right to change limits, conditions and dimensions. © 2013 IXYS all rights reserved Data according to IEC 60747and per semiconductor unless otherwise specified 20130515b VUO30-18NO3 Rectifier 30 250 500 50 Hz 0.8 x V RRM VR = 0 V 225 400 20 IF [A] 10 200 IFSM 175 [A] 150 TVJ = 45°C TVJ = 150°C I2t 300 [A2s] 200 TVJ = 45°C TVJ = 150°C TVJ = 125°C 150°C 0 0.4 0.6 TVJ = 25°C 0.8 1.0 VF [V] 1.2 1.4 Fig. 1 Forward current vs. voltage drop per diode 125 100 10-3 10-2 10-1 t [s] 100 Fig. 2 Surge overload current vs. time per diode 100 0 1 10 t [ms] Fig. 3 I2t vs. time per diode 20 16 Ptot 12 DC = 1 0.5 0.4 0.33 0.17 0.08 [W] 8 RthJA: 0.6 KW 0.8 KW 1 KW 2 KW 4 KW 8 KW 4 0 0 4 8 12 16 0 25 50 75 100 125 150 175 IF(AV)M [A] TA [°C] Fig. 4 Power dissipation vs. forward current and ambient temperature per diode 60 50 40 IF(AV)M 30 [A] 20 DC = 1 0.5 0.4 0.33 0.17 0.08 10 0 0 25 50 75 100 125 150 TC [°C] Fig. 5 Max. forward current vs. case temperature per diode 2.5 2.0 1.5 ZthJC 1.0 [K/W] 0.5 0.0 1 10 100 1000 10000 t [ms] Fig. 6 Transient thermal impedance junction to case vs. time per diode Constants for ZthJC calculation: i Rth (K/W) 1 0.0607 2 0.2030 3 0.5005 4 0.7030 5 0.5328 ti (s) 0.00040 0.00256 0.00450 0.02420 0.15000 IXYS reserves the right to change limits, conditions and dimensions. © 2013 IXYS all rights reserved Data according to IEC 60747and per se.


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