Document
Standard Rectifier Module
3~ Rectifier Bridge
Part number
VUO30-18NO3
- ~~~ +
VUO30-18NO3
3~ Rectifier
VRRM = I DAV = I FSM =
800 V 45 A
300 A
Features / Advantages:
● Package with DCB ceramic ● Reduced weight ● Improved temperature and power cycling ● Planar passivated chips ● Very low forward voltage drop ● Very low leakage current
Applications:
● Diode for main rectification ● For three phase bridge configurations ● Supplies for DC power equipment ● Input rectifiers for PWM inverter ● Battery DC power supplies ● Field supply for DC motors
Package: FO-F-B
● Isolation Voltage: 3600 V~ ● Industry standard outline ● RoHS compliant ● ¼“ fast-on terminals ● Easy to mount with two screws ● Base plate: DCB ceramic ● Reduced weight ● Advanced power cycling
IXYS reserves the right to change limits, conditions and dimensions.
© 2013 IXYS all rights reserved
Data according to IEC 60747and per semiconductor unless otherwise specified
20130515b
Rectifier
Symbol VRSM VRRM IR
VF
I DAV
Definition
Conditions
max. non-repetitive reverse blocking voltage
max. repetitive reverse blocking voltage
reverse current
VR = 800 V
VR = 800 V
forward voltage drop
IF = 15 A
IF = 45 A
IF = 15 A
IF = 45 A
bridge output current
TC = 110°C
rectangular
d=⅓
VF0 rF R thJC R thCH Ptot I FSM
threshold voltage slope resistance
for power loss calculation only
thermal resistance junction to case
thermal resistance case to heatsink
total power dissipation max. forward surge current
t = 10 ms; (50 Hz), sine t = 8,3 ms; (60 Hz), sine
t = 10 ms; (50 Hz), sine
t = 8,3 ms; (60 Hz), sine
I²t value for fusing
t = 10 ms; (50 Hz), sine
t = 8,3 ms; (60 Hz), sine
t = 10 ms; (50 Hz), sine
t = 8,3 ms; (60 Hz), sine
CJ junction capacitance
VR = 400 V; f = 1 MHz
VUO30-18NO3
TVJ = 25°C TVJ = 25°C TVJ = 25°C TVJ = 150°C TVJ = 25°C
TVJ = 125°C
TVJ = 150°C
Ratings
min. typ. max. 900 800 40 1.5 1.10 1.38 1.01 1.38 45
Unit V V
µA mA
V V V V A
TVJ = 150°C
TC = 25°C TVJ = 45°C VR = 0 V TVJ = 150°C VR = 0 V TVJ = 45°C VR = 0 V TVJ = 150°C VR = 0 V TVJ = 25°C
0.80 V 12.9 mΩ
2 K/W 0.4 K/W
60 W 300 A 325 A 255 A 275 A 450 A²s 440 A²s 325 A²s 315 A²s 10 pF
IXYS reserves the right to change limits, conditions and dimensions.
© 2013 IXYS all rights reserved
Data according to IEC 60747and per semiconductor unless otherwise specified
20130515b
VUO30-18NO3
Package FO-F-B
Symbol I RMS Tstg T VJ Weight
Definition
RMS current storage temperature virtual junction temperature
Conditions
per terminal
M D mounting torque
d Spp/App d Spb/Apb
creepage distance on surface | striking distance through air
V ISOL
isolation voltage
t = 1 second t = 1 minute
terminal to terminal terminal to backside
50/60 Hz, RMS; IISOL ≤ 1 mA
Ratings
min.
-40 -40
2
typ. max. 100 125 150
45 2.5
18.0 6.0
26.0 20.0 3600
3000
Unit A °C °C g
Nm
mm mm
V V
Date Code + Assembly
line
yywwx Part Number
Lot Number
Ordering Standard
Part Number VUO30-18NO3
Marking on Product VUO30-18NO3
Delivery Mode Box
Quantity Code No. 10 454362
Equivalent Circuits for Simulation
I V0
R0
Rectifier
V 0 max R0 max
threshold voltage slope resistance *
0.8 11.7
* on die level
T VJ = 150 °C
V mΩ
IXYS reserves the right to change limits, conditions and dimensions.
© 2013 IXYS all rights reserved
Data according to IEC 60747and per semiconductor unless otherwise specified
20130515b
Outlines FO-F-B
VUO30-18NO3
6.25 6.25 12.5 12.5
6.3 x 0.8
24.5 21
5.3 4 2
31.6 10 10
48 1.6
52
7 41
5.3 x 6.9
++ ~~~
__
63
- ~~~ +
8
9 63
45°
IXYS reserves the right to change limits, conditions and dimensions.
© 2013 IXYS all rights reserved
Data according to IEC 60747and per semiconductor unless otherwise specified
20130515b
VUO30-18NO3
Rectifier
30 250 500
50 Hz 0.8 x V RRM
VR = 0 V
225 400
20 IF
[A] 10
200
IFSM 175
[A]
150
TVJ = 45°C TVJ = 150°C
I2t 300
[A2s]
200
TVJ = 45°C
TVJ = 150°C
TVJ = 125°C 150°C
0 0.4 0.6
TVJ = 25°C
0.8 1.0 VF [V]
1.2
1.4
Fig. 1 Forward current vs. voltage drop per diode
125
100 10-3
10-2
10-1
t [s]
100
Fig. 2 Surge overload current vs. time per diode
100
0 1 10 t [ms] Fig. 3 I2t vs. time per diode
20 16 Ptot 12
DC = 1
0.5 0.4 0.33 0.17 0.08
[W] 8
RthJA: 0.6 KW 0.8 KW 1 KW 2 KW 4 KW 8 KW
4
0
0 4 8 12 16 0 25 50 75 100 125 150 175
IF(AV)M [A]
TA [°C]
Fig. 4 Power dissipation vs. forward current and ambient temperature per diode
60
50
40 IF(AV)M
30 [A]
20
DC = 1
0.5 0.4 0.33 0.17 0.08
10
0 0 25 50 75 100 125 150 TC [°C]
Fig. 5 Max. forward current vs. case temperature per diode
2.5
2.0
1.5
ZthJC 1.0
[K/W]
0.5
0.0 1
10
100
1000
10000
t [ms]
Fig. 6 Transient thermal impedance junction to case vs. time per diode
Constants for ZthJC calculation:
i Rth (K/W) 1 0.0607 2 0.2030 3 0.5005 4 0.7030 5 0.5328
ti (s) 0.00040 0.00256 0.00450 0.02420 0.15000
IXYS reserves the right to change limits, conditions and dimensions.
© 2013 IXYS all rights reserved
Data according to IEC 60747and per se.