VUO16-16NO1

Three Phase Rectifier Bridge VUO 16 IdAVM = 20 A VRRM = 800-1800 V VRSM V 900 1300 1500 1700 1900 VRRM V 800 1200 1400 1600 1800 Type VUO 16-08NO1 VUO 16-12NO1 VUO 16-14NO1 VUO 16-16NO1 VUO 16-18NO1 10 8 6 1/2 4 5 12 10 4/5 8 6 Symbol IdAV IdAV IdAVM I FSM I2t TVJ T VJM Tstg VISOL Md Weight Symbol IR VF V T0 rT RthJH dS dA a Test Conditions TK = 90°C, module TA = 45°C (RthKA = 0.5 K/W), module module T VJ = 45°C; VR = 0 T =T VJ VJM VR = 0 TVJ = 45°C VR = 0 TVJ = TVJM V =0 R t = 10 ms (50 Hz), sine t = 8.3 ms (60 Hz), sine t = 10 ms (50 Hz), sine t = 8.3 ms (60 Hz), sine t = 10 ms (50 Hz), sine t = 8.3 ms (60 Hz), sine t = 10 ms (50 Hz), sine t = 8.3 ms (60 Hz), sine 50/60 Hz, RMS t = 1 min IISOL ≤ 1 mA t=1s Mounting torque (M5) (10-32UNF) typ. Test Conditions VR = VRRM VR = VRRM TVJ = 25°C TVJ = TVJM IF = 7 A; TVJ = 25°C For power-loss calculations only per diode, per module, 120° rect. 120° rect. Creeping distance on surface Creepage distance in air Max. allowable acceleration Maximum Ratings 15 A 20 A 20 A 100 A 106 A 85 A 90 A 50 A2s 47 A2s 36 A2s 33 A2s -40...+130 130 -40...+125 °C °C °C 3000 3600 V~ V~ 2 - 2.5 18-22 35 Nm lb.in. g Characteristic Values ≤ 0.3 mA ≤ 5 mA ≤ 1.15 V 0.8 V 50 mΩ 4.5 K/W 0.75 K/W 12.7 mm 9.4 mm 50 m/s2 Features l Package with DCB ceramic base plate l Isolation voltage 3600 V~ l Planar passivated chips l Blocking voltage up to 1800 V l Low forward voltage drop l Leads suitable for PC board soldering l ...