CEM6600
N-Channel Enhancement Mode Field Effect Transistor
FEATURES
60V, 4A, RDS(ON) = 76mΩ @VGS = 10V. RDS(ON) = 100mΩ...
CEM6600
N-Channel Enhancement Mode Field Effect
Transistor
FEATURES
60V, 4A, RDS(ON) = 76mΩ @VGS = 10V. RDS(ON) = 100mΩ @VGS = 4.5V.
Super high dense cell design for extremely low RDS(ON). High power and current handing capability. Lead free product is acquired. Surface mount Package.
DD D D 8 7 65
SO-8
1
1 234 S SSG
ABSOLUTE MAXIMUM RATINGS TA = 25 C unless otherwise noted
Parameter
Symbol
Limit
Drain-Source Voltage Gate-Source Voltage
VDS 60
VGS ±20
Drain Current-Continuous Drain Current-Pulsed a
ID 4 IDM 15
Maximum Power Dissipation
PD 2.5
Operating and Store Temperature Range
TJ,Tstg
-55 to 150
Thermal Characteristics
Parameter Thermal Resistance, Junction-to-Ambient b
Symbol RθJA
Limit 50
Units V V A A W C
Units C/W
Details are subject to change without notice .
1
Rev 1. 2010.Feb http://www.cet-mos.com
Electrical Characteristics TA = 25 C unless otherwise noted
Parameter
Symbol
Test Condition
Off Characteristics
Drain-Source Breakdown Voltage Zero Gate Voltage Drain Current Gate Body Leakage Current, Forward Gate Body Leakage Current, Reverse On Characteristics c
BVDSS IDSS IGSSF IGSSR
VGS = 0V, ID = 250µA VDS = 60V, VGS = 0V VGS = 20V, VDS = 0V VGS = -20V, VDS = 0V
Gate Threshold Voltage Static Drain-Source On-Resistance Forwand Transconductance Dynamic Characteristics d
VGS(th) RDS(on)
gFS
VGS = VDS, ID = 250µA VGS = 10V, ID = 4A VGS = 4.5V, ID = 3.4A VDS = 10V, ID = 4A
Input Capacitance Output Capacitance Reverse Transfer Capacitan...