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CEM6188 Dataheets PDF



Part Number CEM6188
Manufacturers Chino-Excel Technology
Logo Chino-Excel Technology
Description Dual N-Channel Enhancement Mode Field Effect Transistor
Datasheet CEM6188 DatasheetCEM6188 Datasheet (PDF)

CEM6188 Dual N-Channel Enhancement Mode Field Effect Transistor PRELIMINARY FEATURES 60V, 7.3A, RDS(ON) = 26mΩ @VGS = 10V. RDS(ON) = 35mΩ @VGS = 4.5V. Super high dense cell design for extremely low RDS(ON). High power and current handing capability. Lead free product is acquired. Surface mount Package. D1 D1 D2 D2 876 5 SO-8 1 123 4 S1 G1 S2 G2 ABSOLUTE MAXIMUM RATINGS TA = 25 C unless otherwise noted Parameter Symbol Limit Drain-Source Voltage Gate-Source Voltage VDS 60 VGS ±20 Dr.

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CEM6188 Dual N-Channel Enhancement Mode Field Effect Transistor PRELIMINARY FEATURES 60V, 7.3A, RDS(ON) = 26mΩ @VGS = 10V. RDS(ON) = 35mΩ @VGS = 4.5V. Super high dense cell design for extremely low RDS(ON). High power and current handing capability. Lead free product is acquired. Surface mount Package. D1 D1 D2 D2 876 5 SO-8 1 123 4 S1 G1 S2 G2 ABSOLUTE MAXIMUM RATINGS TA = 25 C unless otherwise noted Parameter Symbol Limit Drain-Source Voltage Gate-Source Voltage VDS 60 VGS ±20 Drain Current-Continuous Drain Current-Pulsed a ID 7.3 IDM 29.2 Maximum Power Dissipation PD 2 Operating and Store Temperature Range TJ,Tstg -55 to 150 Thermal Characteristics Parameter Thermal Resistance, Junction-to-Ambient b Symbol RθJA Limit 62.5 Units V V A A W C Units C/W This is preliminary information on a new product in development now . Details are subject to change without notice . 1 Rev 1. 2011.Mar http://www.cet-mos.com CEM6188 Electrical Characteristics TA = 25 C unless otherwise noted Parameter Symbol Test Condition Off Characteristics Drain-Source Breakdown Voltage Zero Gate Voltage Drain Current Gate Body Leakage Current, Forward Gate Body Leakage Current, Reverse On Characteristics c BVDSS IDSS IGSSF IGSSR VGS = 0V, ID = 250µA VDS = 60V, VGS = 0V VGS = 20V, VDS = 0V VGS = -20V, VDS = 0V Gate Threshold Voltage Static Drain-Source On-Resistance Dynamic Characteristics d VGS(th) RDS(on) VGS = VDS, ID = 250µA VGS = 10V, ID =6A VGS = 4.5V, ID =4A Input Capacitance Output Capacitance Reverse Transfer Capacitance Switching Characteristics d Ciss Coss Crss VDS = 25V, VGS = 0V, f = 1.0 MHz Turn-On Delay Time Turn-On Rise Time Turn-Off Delay Time td(on) tr td(off) VDD = 30V, ID = 6A, VGS = 10V, RGEN = 4.7Ω Turn-Off Fall Time tf Total Gate Charge Gate-Source Charge Gate-Drain Charge Qg Qgs VDS = 48V, ID = 6A, VGS = 10V Qgd Drain-Source Diode Characteristics and Maximun Ratings Drain-Source Diode Forward Current b Drain-Source Diode Forward Voltage c IS VSD VGS = 0V, IS = 1.5A Min 60 1 Notes : a.Repetitive Rating : Pulse width limited by maximum junction temperature. b.Surface Mounted on FR4 Board, t < 10 sec. c.Pulse Test : Pulse Width < 300µs, Duty Cycle < 2%. d.Guaranteed by design, not subject to production testing. Typ 20 29 1120 125 75 15 5 38 10 24 6 6 Max Units 1 100 -100 V µA nA nA 3V 26 mΩ 35 mΩ pF pF pF 30 ns 10 ns 76 ns 20 ns 31 nC nC nC 1.5 A 1.2 V 2 VTH, Normalized Gate-Source Threshold Voltage C, Capacitance (pF) ID, Drain Current (A) 24 VGS=10,8,7V 20 16 12 8 VGS=4V 4 VGS=3V 0 0.0 0.5 1.0 1.5 2.0 2.5 3.0 VDS, Drain-to-Source Voltage (V) Figure 1. Output Characteristics 1200 1000 Ciss 800 600 400 200 0 0 Coss Crss 5 10 15 20 25 VDS, Drain-to-Source Voltage (V) Figure 3. Capacitance 1.3 VDS=VGS 1.2 ID=250µA 1.1 1.0 0.9 0.8 0.7 0.6 -50 -25 0 25 50 75 100 125 150 TJ, Junction Temperature( C) Figure 5. Gate Threshold Variation with Temperature 3 RDS(ON), Normalized RDS(ON), On-Resistance(Ohms) IS, Source-drain current (A) ID, Drain Current (A) CEM6188 15 25 C 12 TJ=125 C 9 -55 C 6 3 0 0.0 2 4 6 8 10 VGS, Gate-to-Source Voltage (V) Figure 2. Transfer Characteristics 2.2 ID=6A 1.9 VGS=10V 1.6 1.3 1.0 0.7 0.4 -100 -50 0 50 100 150 200 TJ, Junction Temperature( C) Figure 4. On-Resistance Variation with Temperature VGS=0V 101 100 10-1 0.4 0.6 0.8 1.0 1.2 1.4 VSD, Body Diode Forward Voltage (V) Figure 6. Body Diode Forward Voltage Variation with Source Current VGS, Gate to Source Voltage (V) ID, Drain Current (A) 10 VDS=48V ID=6A 8 6 4 2 0 0 5 10 15 20 25 Qg, Total Gate Charge (nC) Figure 7. Gate Charge VDD VIN RL D VOUT VGS RGEN G S Figure 9. Switching Test Circuit CEM6188 102 RDS(ON)Limit 101 100 10ms 100ms 1s DC 10-1 TA=25 C TJ=150 C 10-2 Single 10-2 Pulse 10-1 100 101 102 VDS, Drain-Source Voltage (V) Figure 8. Maximum Safe Operating Area td(on) VOUT t on tr td(off) 90% 10% INVERTED toff tf 90% 10% VIN 10% 50% 90% 50% PULSE WIDTH Figure 10. Switching Waveforms r(t),Normalized Effective Transient Thermal Impedance 100 D=0.5 10-1 0.2 0.1 0.05 0.02 10-2 10-4 Single Pulse 10-3 10-2 10-1 100 Square Wave Pulse Duration (sec) PDM t1 t2 1. R JA (t)=r (t) * R JA 2. R JA=See Datasheet 3. TJM-TA = P* R JA (t) 4. Duty Cycle, D=t1/t2 101 102 Figure 11. Normalized Thermal Transient Impedance Curve 4 .


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