Dual N-Channel Enhancement Mode Field Effect Transistor
Description
CEM8208
Dual N-Channel Enhancement Mode Field Effect Transistor
FEATURES
20V, 7A, RDS(ON) = 22mΩ @VGS = 4.5V. RDS(ON) = 32mΩ @VGS = 2.5V.
Super high dense cell design for extremely low RDS(ON). High power and current handing capability. Lead free product is acquired. Surface mount Package. ESD Protected: 2000 V
D1 D1 D2 D2 8765
5
SO-8
1
1234 S1 G1 S2 G...
