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TH58NVG7D2GTA20

Part Number	TH58NVG7D2GTA20
Manufacturer	Toshiba
Description	128 GBIT (8G x 8-BIT x 2) CMOS NAND E2PROM
Published	Sep 1, 2015
Detailed Description	TOSHIBA CONFIDENTIAL TH58NVG7D2GTA20 TENTATIVE TOSHIBA MOS DIGITAL INTEGRATED CIRCUIT SILICON GATE CMOS 128 GBIT (8G  ...
Datasheet	TH58NVG7D2GTA20 PDF File

Overview

TOSHIBA CONFIDENTIAL TH58NVG7D2GTA20 TENTATIVE TOSHIBA MOS DIGITAL INTEGRATED CIRCUIT SILICON GATE CMOS 128 GBIT (8G  8 BIT  2) CMOS NAND E2PROM (Multi-Level-Cell) DESCRIPTION The TH58NVG7D2G is a single 3.
3 V 128 Gbit (149,189,296,128 bits) NAND Electrically Erasable and Programmable Read-Only Memory (NAND E2PROM) organized as (8192 + 640) bytes  256 pages  8248 blocks.
The device has two 8832-byte static registers which allow program and read data to be transferred between the register and the memory cell array in 8832-byte increments.
The Erase operation is implemented in a single block unit (2 Mbytes  160 Kbytes: 8832 bytes  256 pages).
The TH58NVG7D2G is a serial-type memory devi...

Similar Datasheet

TH58NVG7D2GTA20 128 GBIT (8G x 8-BIT x 2) CMOS NAND E2PROM - Toshiba

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