Document
TC58BVG0S3HTAI0
TOSHIBA MOS DIGITAL INTEGRATED CIRCUIT SILICON GATE CMOS
1 GBIT (128M × 8 BIT) CMOS NAND E2PROM
DESCRIPTION
The TC58BVG0S3HTAI0 is a single 3.3V 1 Gbit (1,107,296,256 bits) NAND Electrically Erasable and Programmable Read-Only Memory (NAND E2PROM) organized as (2048 + 64) bytes × 64 pages × 1024blocks. The device has a 2112-byte static register which allows program and read data to be transferred between the register and the memory cell array in 2112-bytes increments. The Erase operation is implemented in a single block unit (128 Kbytes + 4 Kbytes: 2112 bytes × 64 pages).
The TC58BVG0S3HTAI0 is a serial-type memory device which utilizes the I/O pins for both address and data input/output as well as for command inputs. The Erase and Program operations are automatically executed making the device most suitable for applications such as solid-state file storage, voice recording, image file memory for still cameras and other systems which require high-density non-volatile memory data storage.
The TC58BVG0S3HTAI0 has ECC logic on the chip and 8bit read errors for each 528Bytes can be corrected internally.
FEATURES
• Organization
x8
Memory cell array 2112 × 64K × 8
Register
2112× 8
Page size
2112 bytes
Block size
(128K + 4K) bytes
• Modes Read, Reset, Auto Page Program, Auto Block Erase, Status Read, Page Copy,
ECC Status Read
• Mode control Serial input/output Command control
• Number of valid blocks Min 1004 blocks Max 1024 blocks
• Power supply VCC = 2.7V to 3.6V
• Access time
Cell array to register 40 µs typ.
Serial Read Cycle
25 ns min (CL=50pF)
• Program/Erase time Auto Page Program Auto Block Erase
330 µs/page typ. 2.5 ms/block typ.
• Operating current Read (25 ns cycle)
Program (avg.) Erase (avg.) Standby
30 mA max.
30 mA max 30 mA max 50 µA max
• Package TSOP I 48-P-1220-0.50 (Weight: 0.53 g typ.)
• 8bit ECC for each 528Bytes is implemented on a chip.
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PIN ASSIGNMENT (TOP VIEW)
×8
NC NC NC NC NC NC RY / BY RE CE NC NC VCC VSS NC NC CLE ALE WE WP NC NC NC NC NC
1 2 3 4 5 6 7 8 9 10 11 12 13 14 15 16 17 18 19 20 21 22 23 24
TC58BVG0S3HTAI0
×8
48 NC 47 NC 46 NC 45 NC 44 I/O8 43 I/O7 42 I/O6 41 I/O5 40 NC 39 NC 38 NC 37 VCC 36 VSS 35 NC 34 NC 33 NC 32 I/O4 31 I/O3 30 I/O2 29 I/O1 28 NC 27 NC 26 NC 25 NC
PIN NAMES
I/O1 to I/O8 CE WE RE CLE ALE WP
RY/BY VCC VSS NC
I/O port Chip enable Write enable Read enable Command latch enable Address latch enable Write protect Ready/Busy Power supply Ground No Connection
TC58BVG0S3HTAI0
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BLOCK DIAGRAM
Data register 1
I/O1 to I/O8
CE CLE ALE WE
RE WP
RY/BY
I/O Control circuit
Logic control
RY / BY
ECC Logic Status register Address register Command register
Control circuit
TC58BVG0S3HTAI0
VCC VSS
Column buffer Column decoder Data register 0
Sense amp
Memory cell array
Row address buffer decoder
Row address decoder
HV generator
ABSOLUTE MAXIMUM RATINGS
SYMBOL
RATING
VCC Power Supply Voltage
VIN Input Voltage
VI/O PD TSOLDER TSTG TOPR
Input /Output Voltage Power Dissipation Soldering Temperature (10 s) Storage Temperature Operating Temperature
VALUE −0.6 to 4.6 −0.6 to 4.6 −0.6 to VCC + 0.3 (≤ 4.6 V)
0.3 260 −55 to 150 -40 to 85
CAPACITANCE *(Ta = 25°C, f = 1 MHz)
SYMB0L
PARAMETER
CONDITION
CIN Input
VIN = 0 V
COUT
Output
VOUT = 0 V
* This parameter is periodically sampled and is not tested for every device.
MIN ⎯ ⎯
MAX 10 10
UNIT V V V W °C °C °C
UNIT pF pF
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VALID BLOCKS
SYMBOL
PARAMETER
MIN
TYP.
MAX
UNIT
NVB Number of Valid Blocks
1004
⎯
1024
Blocks
NOTE: The device occasionally contains unusable blocks. Refer to Application Note (13) toward the end of this document. The first block (Block 0) is guaranteed to be a valid block at the time of shipment. The specification for the minimum number of valid blocks is applicable over lifetime
RECOMMENDED DC OPERATING CONDITIONS
SYMBOL
PARAMETER
VCC Power Supply Voltage VIH High Level input Voltage VIL Low Level Input Voltage * −2 V (pulse width lower than 20 ns)
MIN 2.7 Vcc x 0.8 −0.3*
TYP. ⎯ ⎯ ⎯
MAX 3.6 VCC + 0.3 Vcc x 0.2
UNIT V V V
DC CHARACTERISTICS (Ta = -40 to 85 , VCC = 2.7 to 3.6V)
SYMBOL
PARAMETER
CONDITION
IIL ILO ICCO1 ICCO2 ICCO3 ICCS
Input Leakage Current Output Leakage Current Serial Read Current Programming Current Erasing Current Standby Current
VIN = 0 V to VCC VOUT = 0 V to VCC CE = VIL, IOUT = 0 mA, tcycle = 25 ns
⎯ ⎯ CE = VCC − 0.2 V, WP = 0 V/VCC,
MIN
⎯ ⎯ ⎯ ⎯ ⎯ ⎯
TYP.
⎯ ⎯ ⎯ ⎯ ⎯ ⎯
MAX
±10 ±10 30 30 30 50
UNIT
µA µA mA mA mA µA
VOH
High Level Output Voltage IOH = −0.1 mA
Vcc – 0.2
⎯
⎯
V
VOL Low Level Output Voltage IOL = 0.1 mA
IOL ( RY / BY )
Output current of RY / BY pin
VOL = 0.2 V
⎯ ⎯ 0.2 V ⎯ 4 ⎯ mA
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TC58BVG0S3HTAI0
AC CHARACTERISTICS AND RECOMMENDED OPERATING CONDITIONS
(Ta = -40 to 85 , VCC = 2.7 to 3.6V)
SYMBOL
PARAMETER
tCLS
CLE Setup Time
tCLH
CLE Hold Time
tCS CE Setup Time
tCH CE Hold Time
tWP Write Puls.