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TC58BVG0S3HTAI0 Dataheets PDF



Part Number TC58BVG0S3HTAI0
Manufacturers Toshiba
Logo Toshiba
Description 1 GBIT (128M x 8-BIT) CMOS NAND E2PROM
Datasheet TC58BVG0S3HTAI0 DatasheetTC58BVG0S3HTAI0 Datasheet (PDF)

TC58BVG0S3HTAI0 TOSHIBA MOS DIGITAL INTEGRATED CIRCUIT SILICON GATE CMOS 1 GBIT (128M × 8 BIT) CMOS NAND E2PROM DESCRIPTION The TC58BVG0S3HTAI0 is a single 3.3V 1 Gbit (1,107,296,256 bits) NAND Electrically Erasable and Programmable Read-Only Memory (NAND E2PROM) organized as (2048 + 64) bytes × 64 pages × 1024blocks. The device has a 2112-byte static register which allows program and read data to be transferred between the register and the memory cell array in 2112-bytes increments. The Erase .

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TC58BVG0S3HTAI0 TOSHIBA MOS DIGITAL INTEGRATED CIRCUIT SILICON GATE CMOS 1 GBIT (128M × 8 BIT) CMOS NAND E2PROM DESCRIPTION The TC58BVG0S3HTAI0 is a single 3.3V 1 Gbit (1,107,296,256 bits) NAND Electrically Erasable and Programmable Read-Only Memory (NAND E2PROM) organized as (2048 + 64) bytes × 64 pages × 1024blocks. The device has a 2112-byte static register which allows program and read data to be transferred between the register and the memory cell array in 2112-bytes increments. The Erase operation is implemented in a single block unit (128 Kbytes + 4 Kbytes: 2112 bytes × 64 pages). The TC58BVG0S3HTAI0 is a serial-type memory device which utilizes the I/O pins for both address and data input/output as well as for command inputs. The Erase and Program operations are automatically executed making the device most suitable for applications such as solid-state file storage, voice recording, image file memory for still cameras and other systems which require high-density non-volatile memory data storage. The TC58BVG0S3HTAI0 has ECC logic on the chip and 8bit read errors for each 528Bytes can be corrected internally. FEATURES • Organization x8 Memory cell array 2112 × 64K × 8 Register 2112× 8 Page size 2112 bytes Block size (128K + 4K) bytes • Modes Read, Reset, Auto Page Program, Auto Block Erase, Status Read, Page Copy, ECC Status Read • Mode control Serial input/output Command control • Number of valid blocks Min 1004 blocks Max 1024 blocks • Power supply VCC = 2.7V to 3.6V • Access time Cell array to register 40 µs typ. Serial Read Cycle 25 ns min (CL=50pF) • Program/Erase time Auto Page Program Auto Block Erase 330 µs/page typ. 2.5 ms/block typ. • Operating current Read (25 ns cycle) Program (avg.) Erase (avg.) Standby 30 mA max. 30 mA max 30 mA max 50 µA max • Package TSOP I 48-P-1220-0.50 (Weight: 0.53 g typ.) • 8bit ECC for each 528Bytes is implemented on a chip. 1 2012-08-31C PIN ASSIGNMENT (TOP VIEW) ×8 NC NC NC NC NC NC RY / BY RE CE NC NC VCC VSS NC NC CLE ALE WE WP NC NC NC NC NC 1 2 3 4 5 6 7 8 9 10 11 12 13 14 15 16 17 18 19 20 21 22 23 24 TC58BVG0S3HTAI0 ×8 48 NC 47 NC 46 NC 45 NC 44 I/O8 43 I/O7 42 I/O6 41 I/O5 40 NC 39 NC 38 NC 37 VCC 36 VSS 35 NC 34 NC 33 NC 32 I/O4 31 I/O3 30 I/O2 29 I/O1 28 NC 27 NC 26 NC 25 NC PIN NAMES I/O1 to I/O8 CE WE RE CLE ALE WP RY/BY VCC VSS NC I/O port Chip enable Write enable Read enable Command latch enable Address latch enable Write protect Ready/Busy Power supply Ground No Connection TC58BVG0S3HTAI0 2 2012-08-31C BLOCK DIAGRAM Data register 1 I/O1 to I/O8 CE CLE ALE WE RE WP RY/BY I/O Control circuit Logic control RY / BY ECC Logic Status register Address register Command register Control circuit TC58BVG0S3HTAI0 VCC VSS Column buffer Column decoder Data register 0 Sense amp Memory cell array Row address buffer decoder Row address decoder HV generator ABSOLUTE MAXIMUM RATINGS SYMBOL RATING VCC Power Supply Voltage VIN Input Voltage VI/O PD TSOLDER TSTG TOPR Input /Output Voltage Power Dissipation Soldering Temperature (10 s) Storage Temperature Operating Temperature VALUE −0.6 to 4.6 −0.6 to 4.6 −0.6 to VCC + 0.3 (≤ 4.6 V) 0.3 260 −55 to 150 -40 to 85 CAPACITANCE *(Ta = 25°C, f = 1 MHz) SYMB0L PARAMETER CONDITION CIN Input VIN = 0 V COUT Output VOUT = 0 V * This parameter is periodically sampled and is not tested for every device. MIN ⎯ ⎯ MAX 10 10 UNIT V V V W °C °C °C UNIT pF pF 3 2012-08-31C TC58BVG0S3HTAI0 VALID BLOCKS SYMBOL PARAMETER MIN TYP. MAX UNIT NVB Number of Valid Blocks 1004 ⎯ 1024 Blocks NOTE: The device occasionally contains unusable blocks. Refer to Application Note (13) toward the end of this document. The first block (Block 0) is guaranteed to be a valid block at the time of shipment. The specification for the minimum number of valid blocks is applicable over lifetime RECOMMENDED DC OPERATING CONDITIONS SYMBOL PARAMETER VCC Power Supply Voltage VIH High Level input Voltage VIL Low Level Input Voltage * −2 V (pulse width lower than 20 ns) MIN 2.7 Vcc x 0.8 −0.3* TYP. ⎯ ⎯ ⎯ MAX 3.6 VCC + 0.3 Vcc x 0.2 UNIT V V V DC CHARACTERISTICS (Ta = -40 to 85 , VCC = 2.7 to 3.6V) SYMBOL PARAMETER CONDITION IIL ILO ICCO1 ICCO2 ICCO3 ICCS Input Leakage Current Output Leakage Current Serial Read Current Programming Current Erasing Current Standby Current VIN = 0 V to VCC VOUT = 0 V to VCC CE = VIL, IOUT = 0 mA, tcycle = 25 ns ⎯ ⎯ CE = VCC − 0.2 V, WP = 0 V/VCC, MIN ⎯ ⎯ ⎯ ⎯ ⎯ ⎯ TYP. ⎯ ⎯ ⎯ ⎯ ⎯ ⎯ MAX ±10 ±10 30 30 30 50 UNIT µA µA mA mA mA µA VOH High Level Output Voltage IOH = −0.1 mA Vcc – 0.2 ⎯ ⎯ V VOL Low Level Output Voltage IOL = 0.1 mA IOL ( RY / BY ) Output current of RY / BY pin VOL = 0.2 V ⎯ ⎯ 0.2 V ⎯ 4 ⎯ mA 4 2012-08-31C TC58BVG0S3HTAI0 AC CHARACTERISTICS AND RECOMMENDED OPERATING CONDITIONS (Ta = -40 to 85 , VCC = 2.7 to 3.6V) SYMBOL PARAMETER tCLS CLE Setup Time tCLH CLE Hold Time tCS CE Setup Time tCH CE Hold Time tWP Write Puls.


NB6L56 TC58BVG0S3HTAI0 TH58NVG7D2GTA20


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