PN2222

PN2222, PN2222A General Purpose Transistors NPN Silicon Features Pb−Free Packages are Available* MAXIMUM RATINGS Rating Symbol Collector-Emitter Voltage PN2222 PN2222A VCEO Collector-Base Voltage PN2222 PN2222A VCBO Emitter-Base Voltage PN2222 PN2222A VEBO Collector Current − Continuous Total Device Dissipation @ TA = 25°C Derate above 25°C IC PD Total Device Dissipation @ TC = 25°C Derate above 25°C PD Operating and Storage Junction Temperature Range TJ, Tstg Value 30 40 60 75 5.0 6.0 600 625 5.0 1.5 12 −55 to +150 Unit Vdc Vdc Vdc mAdc mW mW/°C W mW/°C °C THERMAL CHARACTERISTICS Characteristic Symbol Max Unit Thermal Resistance, Junction-to-Ambient RqJA 200 °C/W Thermal Resistance, Junction-to-Case RqJC 83.3 °C/W Stresses exceeding Maximum Ratings may damage the device. Maximum Ratings are stress ratings only. Functional operation above the Recommended Operating Conditions is not implied. Extended exposure to stresses above the Recommended Operating Conditions may affect device reliability. http://onsemi.com COLLECTOR 3 2 BASE 1 EMITTER TO−92 CASE 29 STYLE 1 123 STRAIGHT LEAD BULK PACK 12 3 BENT LEAD TAPE & REEL AMMO PACK MARKING DIAGRAM PN 2222 YWW G G PN2 222A YWW G G PN2222 PN2222A Y = Year WW = Work Week G = Pb−Free Package (Note: Microdot may be in either location) ORDERING INFORMATION See detailed ordering and shipping information in the package dimensions section on page 3 of this data sheet. *For additional information o...